Abstract: A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring that extends in a second direction different from the first direction and together with the nonmagnetic layer sandwiches the first ferromagnetic layer in the first direction; and an electrode that together with the nonmagnetic layer sandwiches the second ferromagnetic layer in at least a part in the first direction, wherein the electrode is in contact with at least a part of a lateral side surface of the second ferromagnetic layer.

Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element, a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.

Abstract: A spin-orbit torque magnetoresistance effect element according to the present embodiment includes an element part including a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, a spin-orbit torque wiring positioned in a first direction with respect to the element part, facing the first ferromagnetic layer of the element part, and extending in a second direction, a first conductive part and a second conductive part facing the spin-orbit torque wiring at positions sandwiching the element part when viewed from the first direction, and a gate part positioned between the first conductive part and the second conductive part when viewed from the first direction, facing a second surface of the spin-orbit torque wiring on a side opposite to a first surface which faces the element part, and including a gate insulating layer and a gate electrode in order from a position near the spin-orbit torque wiring, in

Abstract: A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.

Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.

Abstract: A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.

Abstract: A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.

Abstract: A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring that extends in a second direction different from the first direction and together with the nonmagnetic layer sandwiches the first ferromagnetic layer in the first direction; and an electrode that together with the nonmagnetic layer sandwiches the second ferromagnetic layer in at least a part in the first direction, wherein the electrode is in contact with at least a part of a lateral side surface of the second ferromagnetic layer.

Abstract: A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.

Abstract: A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer that is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring which extends in a second direction different from the first direction, and the first wiring being configured to sandwich the first ferromagnetic layer with the nonmagnetic layer in the first direction; an electrode which sandwiches the second ferromagnetic layer at least partially with the nonmagnetic layer in the first direction; and a compound part which is positioned inside the electrode and has a lower thermal conductivity than the electrode.

Abstract: A magnetic recording array includes: a plurality of spin elements each including a wiring and a laminated body having a first ferromagnetic layer laminated on the wiring and arranged in a matrix; a plurality of write wirings connected to first ends of the spin elements' wiring; a plurality of read wirings connected to the laminated bodies of the spin elements; a plurality of common wirings connected to second ends of the wirings of the spin elements belonging to the same column; and a control unit configured to control a write current flowing between first and second ends of each spin element, wherein when data writing is performed continuously, the unit is configured to prohibit writing to at least a spin element connected to the same common wiring as a first spin element and adjacent to the first spin element after the first element to which the current is applied.

Abstract: A magnetic recording array includes: a plurality of spin elements each including a wiring and a laminated body having a first ferromagnetic layer laminated on the wiring and arranged in a matrix; a plurality of write wirings connected to first ends of the spin elements' wiring; a plurality of read wirings connected to the laminated bodies of the spin elements; a plurality of common wirings connected to second ends of the wirings of the spin elements belonging to the same column; and a control unit configured to control a write current flowing between first and second ends of each spin element, wherein when data writing is performed continuously, the unit is configured to prohibit writing to at least a spin element connected to the same common wiring as a first spin element and adjacent to the first spin element after the first element to which the current is applied.

Abstract: A spin-orbit-torque magnetization rotational element includes: a first ferromagnetic layer; and a spin-orbit torque wiring in which a first surface faces the first ferromagnetic layer and a long axis extends in a first direction when viewed in plan view from a lamination direction of the first ferromagnetic layer, wherein the first surface spreads along a reference plane orthogonal to the lamination direction of the first ferromagnetic layer, the spin-orbit torque wiring contains a first virtual cross-section which passes through a first end of the first ferromagnetic layer in the first direction and is orthogonal to the first direction and a second virtual cross-section which passes through a second end of the first ferromagnetic layer in the first direction and is orthogonal to the first direction, and an area of the first virtual cross-section is different from an area of the second virtual cross-section.

Abstract: A spin-orbit torque magnetoresistance effect element includes an element part including a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, a spin-orbit torque wiring positioned in a first direction with respect to the element part, facing the first ferromagnetic layer of the element part, and extending in a second direction, a first conductive part and a second conductive part facing the spin-orbit torque wiring at positions sandwiching the element part when viewed from the first direction, and a gate part including a gate insulating layer and a gate electrode in order from a position near the spin-orbit torque wiring, in which the spin-orbit torque wiring includes a semiconductor to which a scattering element is added.

Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.

Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.

Abstract: A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer that is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring which extends in a second direction different from the first direction, and the first wiring being configured to sandwich the first ferromagnetic layer with the nonmagnetic layer in the first direction; an electrode which sandwiches the second ferromagnetic layer at least partially with the nonmagnetic layer in the first direction; and a compound part which is positioned inside the electrode and has a lower thermal conductivity than the electrode.

Abstract: A spin-orbit-torque magnetization rotational element includes: a first ferromagnetic layer; and a spin-orbit torque wiring in which a first surface faces the first ferromagnetic layer and a long axis extends in a first direction when viewed in plan view from a lamination direction of the first ferromagnetic layer, wherein the first surface spreads along a reference plane orthogonal to the lamination direction of the first ferromagnetic layer, the spin-orbit torque wiring contains a first virtual cross-section which passes through a first end of the first ferromagnetic layer in the first direction and is orthogonal to the first direction and a second virtual cross-section which passes through a second end of the first ferromagnetic layer in the first direction and is orthogonal to the first direction, and an area of the first virtual cross-section is different from an area of the second virtual cross-section.

Abstract: Provided is a magnetic memory including: a first bit line, a second bit line, and a third bit line; a word line; a first magnetoresistance effect element; a first transistor; a second magnetoresistance effect element; and a second transistor, wherein free layers of the first and second magnetoresistance effect elements and the second bit line are connected, a fixed layer of the first magnetoresistance effect element and a source terminal of the first transistor are connected, a drain terminal of the first transistor and the first bit line are connected, a fixed layer of the second magnetoresistance effect element and a drain terminal of the second transistor are connected, a source terminal of the second transistor and the third bit line are connected, and the word line is connected to each of a gate terminal of the first transistor and a gate terminal of the second transistor.

Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.