Abstract: A detection method of resistivity is a detection method of resistivity in which resistivity of a plate-shaped workpiece having a back surface and a front surface on a side opposite to the back surface is detected. The detection method includes an interference waveform acquisition step of irradiating the back surface of the plate-shaped workpiece with light from a light source and acquiring an interference waveform between light reflected by the back surface and light that has been transmitted through the back surface and been reflected by the front surface, and an estimation step of estimating the resistivity of the plate-shaped workpiece on the basis of the interference waveform acquired in the interference waveform acquisition step.

Abstract: An expansion method includes an expansion step of expanding a sheet between an outer periphery of a wafer and an inner periphery of an annular frame in a wafer unit, and a heating step of heating the sheet in its region between the outer periphery of the wafer and the inner periphery of the annular frame by a heating unit to allow slack of the sheet, the slack having been formed in the expansion step, to shrink. The region includes a first region, and a second region that is harder to shrink by the heating than the first region. On the sheet, heat spots of a temperature higher than that of the sheet surrounding the heat spots are formed with heat radiated to the sheet. In the heating step, the heating unit is moved such that the heat spots are positioned over an entirety of at least the second region.

Abstract: A laser beam irradiation unit of a laser processing apparatus includes a laser oscillator, a condenser lens that condenses a laser beam emitted from the laser oscillator, and a phase modulation element arranged between the laser oscillator and the condenser lens. Individual differences of the condenser lens are prevented by applying, to the phase modulation element, voltages corresponding to a combined pattern of a shape correction pattern which is configured to correct differences between an actual shape and design values of the condenser lens, and an adjustment pattern which is configured to adjust optical characteristics of the laser beam at each processing point.

Abstract: A laser beam spot shape correcting method includes a laser beam irradiating step of irradiating a concave mirror with a laser beam, an imaging step of imaging reflected light by a beam profiler, an image forming step of forming an XZ plane image or a YZ plane image from an XY plane image imaged in the imaging step, and a comparing step of comparing the image formed in the image forming step with an XZ plane image or a YZ plane image of an ideal laser beam. A phase pattern displayed on a display unit of a spatial light modulator is changed such that the XZ plane image or the YZ plane image formed in the image forming step coincides with the XZ plane image or the YZ plane image of the ideal laser beam.

Abstract: A calculating section of a control unit calculates a vertical position Defocus for a condensing lens using a height value H1 of a modified layer in a wafer that is set by a setting section according to the equation (1) below. Defocus=(thickness T1 of wafer?height value H1?b)/a??(1) The calculating section calculates an appropriate vertical position for the condensing lens according to the equation (1) depending on the height value H1 of the modified layer that is set by the setting section. Therefore, the vertical position of the condensing lens in laser processing operation can be determined more easily, and a time-consuming and tedious experiment for fine adjustment of the vertical position of the condensing lens does not need to be conducted.

Abstract: In a laser processing apparatus, a height of a focusing lens in a processing unit can be changed according to a change in height of an upper surface of a wafer, thereby changing a vertical position of a focal point of a laser beam inside the wafer. Accordingly, the laser beam can be applied to the wafer as feeding the wafer in a condition where the focal point is set at a vertical position spaced a fixed distance from the lower surface of the wafer. As a result, a modified layer can be formed inside the wafer at a uniform height from the lower surface of the wafer.

Abstract: A laser beam irradiation unit of a laser processing apparatus includes a laser oscillator, a condenser lens that condenses a laser beam emitted from the laser oscillator, and a phase modulation element arranged between the laser oscillator and the condenser lens. Individual differences of the condenser lens are prevented by applying, to the phase modulation element, voltages corresponding to a combined pattern of a shape correction pattern which is configured to correct differences between an actual shape and design values of the condenser lens, and an adjustment pattern which is configured to adjust optical characteristics of the laser beam at each processing point.

Abstract: A laser beam spot shape correcting method includes a laser beam irradiating step of irradiating a concave mirror with a laser beam, an imaging step of imaging reflected light by a beam profiler, an image forming step of forming an XZ plane image or a YZ plane image from an XY plane image imaged in the imaging step, and a comparing step of comparing the image formed in the image forming step with an XZ plane image or a YZ plane image of an ideal laser beam. A phase pattern displayed on a display unit of a spatial light modulator is changed such that the XZ plane image or the YZ plane image formed in the image forming step coincides with the XZ plane image or the YZ plane image of the ideal laser beam.

Abstract: A laser processing apparatus includes a laser beam applying unit for applying a laser beam to a workpiece, and a control unit. The laser beam applying unit includes a laser oscillator for emitting a laser, a condensing lens, a concave mirror having a focal point at a focused spot of the condensing lens and having a spherical reflecting surface, a beam splitter for transmitting therethrough the laser beam emitted from the laser oscillator toward the condensing lens and branching off a reflected beam, and a wavefront measuring unit for receiving the reflected beam and acquiring wavefront data. The control unit changes a phase pattern to be displayed on a display portion of a spatial light modulator on the basis of the wavefront data.

Abstract: A calculating section of a control unit calculates a vertical position Defocus for a condensing lens using a height value H1 of a modified layer in a wafer that is set by a setting section according to the equation (1) below. Defocus=(thickness T1 of wafer?height value H1?b)/a??(1) The calculating section calculates an appropriate vertical position for the condensing lens according to the equation (1) depending on the height value H1 of the modified layer that is set by the setting section. Therefore, the vertical position of the condensing lens in laser processing operation can be determined more easily, and a time-consuming and tedious experiment for fine adjustment of the vertical position of the condensing lens does not need to be conducted.

Abstract: In a laser processing apparatus, a height of a focusing lens in a processing unit can be changed according to a change in height of an upper surface of a wafer, thereby changing a vertical position of a focal point of a laser beam inside the wafer. Accordingly, the laser beam can be applied to the wafer as feeding the wafer in a condition where the focal point is set at a vertical position spaced a fixed distance from the lower surface of the wafer. As a result, a modified layer can be formed inside the wafer at a uniform height from the lower surface of the wafer.

Abstract: A wafer processing method includes a modified layer forming step of forming a modified layer along a planned dividing line within a wafer and a dividing step of dividing the wafer along the planned dividing line with the modified layer as a starting point by applying a force to the wafer. The modified layer forming step includes a forward path modified layer forming step, a backward path modified layer forming step, and a phase shift mask reversing step of reversing a phase shift mask so as to reverse phase distribution of a laser beam applied to the wafer in an X-axis direction after the forward path modified layer forming step and before the backward path modified layer forming step, or after the backward path modified layer forming step and before the forward path modified layer forming step.

Abstract: A wafer is divided at division starting points along division lines to form a predetermined gap between adjacent chips. Next, that area of a tape to which the wafer is adhered is suction held by a table, after which the table and a ring frame holding section are relatively moved further away from each other to expand the tape in a ring shape between an outer periphery of the wafer and an inner periphery of a ring frame. Thereafter, the table and the ring frame holding section are relatively moved closer to each other to slacken the ring-shaped tape, and the ring-shaped tape is heated by a heater, to heat shrink the tape and to maintain the predetermined gap between the adjacent chips.

Abstract: A wafer processing method includes a modified layer forming step of forming a modified layer along a planned dividing line within a wafer and a dividing step of dividing the wafer along the planned dividing line with the modified layer as a starting point by applying a force to the wafer. The modified layer forming step includes a forward path modified layer forming step, a backward path modified layer forming step, and a phase shift mask reversing step of reversing a phase shift mask so as to reverse phase distribution of a laser beam applied to the wafer in an X-axis direction after the forward path modified layer forming step and before the backward path modified layer forming step, or after the backward path modified layer forming step and before the forward path modified layer forming step.

Abstract: An object is to provide a mobile station, a mobile communication system, and a network device that can realize more appropriate call origination control per service as intended by an operator. An MMTEL function unit (120) of a UE (100), based on ssac-BarringForMMTEL-Voice, upon determining that call origination of a VoLTE call is possible, transmits Bearer Request to an NAS function unit (170). The NAS function unit (170), in accordance with the Bearer Request, transmits Service Request to an RRC function unit (190). The RRC function unit (190), in accordance with the Service Request, based on ac-BarringForMO-Data or Tbarring, transmits RRC Connection Request to a mobile communication network (200) without determining a possibility of call origination of the VoLTE call.

Abstract: Disclosed herein is a using method for a test wafer including a test substrate and a metal foil formed on the front side of the test substrate. The using method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the test substrate from the back side of the test wafer in the condition where the focal point of the laser beam is set inside the test substrate, thereby forming a modified layer inside the test substrate, and a damage detecting step of observing the front side of the test wafer after performing the modified layer forming step, thereby detecting damage to the metal foil.

Abstract: A wafer is divided at division starting points along division lines to form a predetermined gap between adjacent chips. Next, that area of a tape to which the wafer is adhered is suction held by a table, after which the table and a ring frame holding section are relatively moved further away from each other to expand the tape in a ring shape between an outer periphery of the wafer and an inner periphery of a ring frame. Thereafter, the table and the ring frame holding section are relatively moved closer to each other to slacken the ring-shaped tape, and the ring-shaped tape is heated by a heater, to heat shrink the tape and to maintain the predetermined gap between the adjacent chips.

Abstract: A chip spacing maintaining apparatus for maintaining the spacing between any adjacent ones of a plurality of chips obtained by dividing a workpiece attached to an expand sheet, the expand sheet being supported at its peripheral portion to an annular frame is provided. The chip spacing maintaining apparatus includes a far-infrared radiation applying unit for applying far-infrared radiation toward the expand sheet expanded in a target area between the outer circumference of the workpiece and the inner circumference of the annular frame, thereby shrinking the expand sheet in the target area, and an air layer forming unit provided adjacent to the far-infrared radiation applying unit, the air layer forming unit having a nozzle hole for discharging a gas toward the workpiece in applying the far-infrared radiation from the far-infrared radiation applying unit toward the expand sheet, thereby forming an air layer above the workpiece.

Abstract: An objective is to prohibit retransmission of “UE assistance information”. A mobile communication method according to the present invention includes the steps of: transmitting “UE assistance information” to a radio base station (eNB) by a mobile station (UE), the “UE assistance information” prompting the radio base station (eNB) to change a parameter for the mobile station UE used in the radio base station; notifying, by the radio base station (eNB), the mobile station (UE) of a transmission-prohibited period of the “UE assistance information”; and stopping, by the mobile station (UE), retransmission of the “UE assistance information” on the basis of the transmission-prohibited period.

Abstract: A mobile station, a networking apparatus, and a mobile communication method with which access restriction according to SSAC can be achieved with greater reliability even when the mobile station is in an RRC CONNECTED state. A UE 100 acquires restriction information indicating a content of Service Specific Access Control, and cancels transmission of a call-origination request based on the acquired restriction information if the call-origination request is generated when the UE 100 is in an RRC CONNECTED state in which connection to an access network is established on a radio resource control layer, the transmission being cancelled in the RRC CONNECTED state.