Abstract: To prevent generation of noise due to a misfire when a rotation speed is increased to an operational rotation speed immediately after low-temperature start, or is increased from an idling rotation speed in a low-temperature state to the operational rotation speed, an embodiment includes a fuel injection device capable of performing multi-stage injection of fuel accumulated in a common rail through an injector, a cooling water temperature sensor as a water temperature detection unit configured to detect a cooling water temperature of an engine, an exhaust temperature sensor as an exhaust temperature detection unit configured to detect the exhaust temperature of the engine, and an engine control unit as a control device. The control device executes a misfire avoiding mode in which the multi-stage injection is continued when the cooling water temperature is not lower than a predetermined water temperature T at start of the engine.

Abstract: To prevent generation of noise due to a misfire when a rotation speed is increased to an operational rotation speed immediately after low-temperature start, or is increased from an idling rotation speed in a low-temperature state to the operational rotation speed, an embodiment includes a fuel injection device capable of performing multi-stage injection of fuel accumulated in a common rail through an injector, a cooling water temperature sensor as a water temperature detection unit configured to detect a cooling water temperature of an engine, an exhaust temperature sensor as an exhaust temperature detection unit configured to detect the exhaust temperature of the engine, and an engine control unit as a control device. The control device executes a misfire avoiding mode in which the multi-stage injection is continued when the cooling water temperature is not lower than a predetermined water temperature T at start of the engine.

Abstract: A method determines a correction amount of an EGR valve opening degree. A basic correction amount map is generated indicating a correlation between rotating speed, load factor, and the correction amount, while the opening degree is maintained at a reference opening degree and the EGR rate is maintained at a target EGR rate, based on correction amounts obtained for mutually different individual combinations of the rotating speed and the load factor. Estimated values of the correction amounts not contained in the basic map are acquired by estimating the distribution of the amounts not in the basic map based on a distribution trend. An extended correction amount map is generated indicating a correlation between the estimated values of the rotating speed, the load factor, and the correction amount while the opening degree is maintained at a reference opening degree and the EGR rate is maintained at a target rate.

Abstract: A method determines a correction amount of an EGR valve opening degree. A basic correction amount map is generated indicating a correlation between rotating speed, load factor, and the correction amount, while the opening degree is maintained at a reference opening degree and the EGR rate is maintained at a target EGR rate, based on correction amounts obtained for mutually different individual combinations of the rotating speed and the load factor. Estimated values of the correction amounts not contained in the basic map are acquired by estimating the distribution of the amounts not in the basic map based on a distribution trend. An extended correction amount map is generated indicating a correlation between the estimated values of the rotating speed, the load factor, and the correction amount while the opening degree is maintained at a reference opening degree and the EGR rate is maintained at a target rate.

Abstract: A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.

Abstract: A solid-state image pickup device includes: a light receiving region where photoelectric conversion elements are two-dimensionally arranged; and a microlens layer which has microlenses that introduce incident light into the photoelectric conversion elements. The microlens layer has a plurality of regions each having different microlens pitches. At least one region has a plurality of microlenses, and a pitch of the microlenses is different from a pitch of the photoelectric conversion elements.

Abstract: A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.

Abstract: In a MOS solid-state imaging device, each of a plurality of pixel cells has a charge holding unit 305. In order to reset the signal charge accumulated in the charge holding unit 305 in each pixel cell in an n-th row, the reset pulse supplied to the gate electrode of the reset transistor is switched to the high potential level Hi. Under this state, the reference voltage source VDDCELL is switched to the low potential level Lo. In response, the reset pulse n temporarily drops toward Lo because of the coupling capacity 308. The reset pulse n is switched to Lo after its potential rises back to Hi.