Abstract: Provided are a composition for metal oxide film formation, a method for producing the composition for metal oxide film formation, and a method for producing a metal oxide film using the composition for metal oxide film formation, which allow for a decrease in amount of residual metals after washing.

Abstract: A metal oxide film-forming composition including a tertiary alkyloxycarbonyloxy group-containing aromatic hydrocarbon ring-modified fluorene compound represented by Formula (1) below; metal oxide nanoparticles surface-treated with a capping agent; and a solvent.

Abstract: Provided are: a novel silicon-containing polymer capable of supporting a metal compound including a metal element; a film-forming composition including the silicon-containing polymer; a method for forming a coating film on the surface of an object to be treated using the film forming composition, and supporting a metal compound on the surface of the object to be treated by bringing the metal compound into contact with the coating film; an article including a coating film which contains said silicon-containing polymer and supports a metal compound; and a method for producing said silicon-containing polymer. This silicon-containing polymer contains, in a molecular chain, at least one among a polysiloxane chain or an oligosiloxane chain, and a polysilane chain or an oligosilane chain, wherein a cyano group-containing hydrocarbon group having 1-10 carbon atoms is introduced onto a silicon atom.

Abstract: First, there is provided a crystal growth control agent which is capable of suppressing an increase in a crystal size of a p-type semiconductor, and performing chemical modification on a surface of p-type semiconductor microparticle. Second, there is provided a composition for forming a hole transport layer which is capable of prompting crystallization and fine pulverization of the p-type semiconductor and performing the chemical modification on the surface of the p-type semiconductor microparticle even in the case where an organic salt (an ionic liquid) containing an anion other than the thiocyanate ion is used. According to the present invention, the crystal growth control agent contains at least one of sulfur-containing compounds (except for thiocyanate) selected from the group consisting of a compound, which generates a thiolate anion due to dissociation of a proton or a cation, and a disulfide compound, and controls crystal growth of a p-type semiconductor.

Abstract: A method of producing a metal chalcogenide dispersion usable in forming a light absorbing layer of a solar cell, the method including: a metal chalcogenide nano particle formation step in which at least one metal or metal compound selected from the group consisting of a group 11, 12, 13, 14 or 15 metal or metal compound, a water-containing solvent and a group 16 element-containing compound are mixed together to obtain metal chalcogenide nano particles; and an addition step in which a compound (1) represented by general formula (1) is added to the metal chalcogenide nano particles, thereby obtaining a metal chalcogenide dispersion (wherein R1 to R4 each independently represents an alkyl group, an aryl group or a hydrogen atom; provided that at least one of R1 to R4 represents a hydrocarbon group).

Abstract: A method of producing a metal chalcogenide dispersion usable in forming a light absorbing layer of a solar cell, the method including: a metal chalcogenide nano particle formation step in which at least one metal or metal compound selected from the group consisting of a group 11, 12, 13, 14 or 15 metal or metal compound, a water-containing solvent and a group 16 element-containing compound are mixed together to obtain metal chalcogenide nano particles; and an addition step in which a compound (1) represented by general formula (1) is added to the metal chalcogenide nano particles, thereby obtaining a metal chalcogenide dispersion (wherein R1 to R4 each independently represents an alkyl group, an aryl group or a hydrogen atom; provided that at least one of R1 to R4 represents a hydrocarbon group).

Abstract: Problem: Providing a photosensitive resin composition that has high sensitivity, sustains a slight shrinkage in volume when cured under heating and can form resist patterns having high-aspect profiles, and a pattern forming method using such a composition. Means for Resolution: A photosensitive resin composition characterized by containing (a) a polyfunctional epoxy resin, (b) a cationic polymerization initiator and (c) an aromatic polycyclic compound as a sensitizer (such as 2,3-dihydroxynaphthalene, 1,5-dihydroxynaphthalene or 2,6-dihydroxynaphthalene), which has at least two substituents capable of forming cross-links with component (a).

Abstract: A photosensitive resin composition is provided that is highly safe, provides a coating film having superior uniformity, can improve the curing density of the cured resin pattern, and is capable of forming a micro resist pattern having a large film thickness and a high aspect ratio with high sensitivity and high resolving ability. According to a photosensitive resin composition including, in addition to an onium fluorinated alkyl fluorophosphate based cation polymerization initiator having a specific structure, a specified solvent or a specified sensitizing agent as essential components, a coating film having superior uniformity, can improve the curing density of the cured resin pattern, and also is capable of forming a micro resist pattern having a large film thickness and a high aspect ratio with high sensitivity and high resolving ability.

Abstract: A method of forming a precision microspace with given configuration and volume; a process for manufacturing a member having a precision microspace with given configuration and volume; etc. There is provided a method of forming a precision microspace by the step of laying a film on a substratum having a precision microscopic depressed portion, comprising the steps of mounting such a substratum on a first stage and setting a second stage covering the outer circumference of the first stage so that the uppermost face of the second stage is higher than that of the first stage; and laying a film on the substratum to thereby obtain a precision microspace with given configuration and volume.

Abstract: Disclosed is a photoresist stripping solution consisting essentially of (a) a quaternary ammonium hydroxide (e.g., tetramethylammonium hydroxide), (b) at least one water-soluble organic solvent selected from glycols and glycol ethers (e.g., propylene glycol, ethylene glycol, diethylene glycol monobutyl ether), and (c) a non-amine water-soluble organic solvent (e.g., dimethyl sulfoxide, N-methyl-2-pyrrolidone). The photoresist stripping solution of the invention has an excellent photoresist strippability, not causing damage of swelling/coloration to acrylic transparent films used in production of liquid-crystal panels and not causing damage to electrode materials. In particular, it has an excellent photoresist strippability to remove even a thick-film negative photoresist (photosensitive dry film) used in production of semiconductor chip packages (especially, wafer-level chip size packages, W-CSP), not causing damage to copper.

Abstract: A photosensitive laminate film for forming a top plate portion, which is suitably used for efficiently and inexpensively forming various precision fine spaces, particularly the precision fine spaces formed in an electronic part such as inkjet head, and a method of forming the precision fine space using the photosensitive laminate film are provided. As the photosensitive laminate film for forming the top plate portion of the precision fine space, which constitutes the top plate portion of the precision fine space by being placed on the precision minute concave portion so as to cover an upper opening followed by being cured, a laminate film providing at least the photosensitive composition layer and the transparent support film is used. The transparent support film supports the photosensitive composition layer as well as prevents the photosensitive composition layer from being deformed upon curing.

Abstract: Problem: Providing a photosensitive resin composition that has high sensitivity, sustains a slight shrinkage in volume when cured under heating and can form resist patterns having high-aspect profiles, and a pattern forming method using such a composition. Means for Resolution: A photosensitive resin composition characterized by containing (a) a polyfunctional epoxy resin, (b) a cationic polymerization initiator and (c) an aromatic polycyclic compound as a sensitizer (such as 2,3-dihydroxynaphthalene, 1,5-dihydroxynaphthalene or 2,6-dihydroxynaphthalene), which has at least two substituents capable of forming cross-links with component (a).

Abstract: A photosensitive resin composition capable of controlling occurrence of defects and capable of forming a resist pattern having a favorable configuration, and a method for forming a resist pattern using the same are provided. According to a photosensitive resin composition including, as component (a), a polyfunctional epoxy resin, and, as component (b), a cation polymerization initiator, in which the concentration of propylene carbonate in the photosensitive resin composition is no greater than 10% by mass, the occurrence of defects can be controlled, and a resist pattern having a favorable shape can be formed.

Abstract: A photosensitive resin composition is provided that is highly safe, provides a coating film having superior uniformity, can improve the curing density of the cured resin pattern, and is capable of forming a micro resist pattern having a large film thickness and a high aspect ratio with high sensitivity and high resolving ability. According to a photosensitive resin composition including, in addition to an onium fluorinated alkyl fluorophosphate based cation polymerization initiator having a specific structure, a specified solvent or a specified sensitizing agent as essential components, a coating film having superior uniformity, can improve the curing density of the cured resin pattern, and also is capable of forming a micro resist pattern having a large film thickness and a high aspect ratio with high sensitivity and high resolving ability.

Abstract: Disclosed is a photoresist stripping solution consisting essentially of (a) a quaternary ammonium hydroxide (e.g., tetramethylammonium hydroxide), (b) at least one water-soluble organic solvent selected from glycols and glycol ethers (e.g., propylene glycol, ethylene glycol, diethylene glycol monobutyl ether), and (c) a non-amine water-soluble organic solvent (e.g., dimethyl sulfoxide, N-methyl-2-pyrrolidone). The photoresist stripping solution of the invention has an excellent photoresist strippability, not causing damage of swelling/coloration to acrylic transparent films used in production of liquid-crystal panels and not causing damage to electrode materials. In particular, it has an excellent photoresist strippability to remove even a thick-film negative photoresist (photosensitive dry film) used in production of semiconductor chip packages (especially, wafer-level chip size packages, W-CSP), not causing damage to copper.

Abstract: A method of forming a precision microspace with given configuration and volume; a process for manufacturing a member having a precision microspace with given configuration and volume; etc. There is provided a method of forming a precision microspace by the step of laying a film on a substratum having a precision microscopic depressed portion, comprising the steps of mounting such a substratum on a first stage and setting a second stage covering the outer circumference of the first stage so that the uppermost face of the second stage is higher than that of the first stage; and laying a film on the substratum to thereby obtain a precision microspace with given configuration and volume.

Abstract: A photosensitive resin composition, which displays superior adhesion with substrates when forming a film and can form fine resin patterns with larger film thicknesses and higher aspect ratios, and a method for forming a pattern using the same are provided. Diphenyl sulfone or derivatives thereof are included into the photosensitive resin composition as an adhesion enhancer. Preferably, the diphenyl sulfone derivative is derived by substituting at least one hydrogen atom of diphenyl sulfone with an amino group, a nitro group, hydroxyl group, carboxyl group, fluorine atom, chlorine atom or acid anhydride.

Abstract: A photosensitive laminate film for forming a top plate portion, which is suitably used for efficiently and inexpensively forming various precision fine spaces, particularly the precision fine spaces formed in an electronic part such as inkjet head, and a method of forming the precision fine space using the photosensitive laminate film are provided. As the photosensitive laminate film for forming the top plate portion of the precision fine space, which constitutes the top plate portion of the precision fine space by being placed on the precision minute concave portion so as to cover an upper opening followed by being cured, a laminate film providing at least the photosensitive composition layer and the transparent support film is used. The transparent support film supports the photosensitive composition layer as well as prevents the photosensitive composition layer from being deformed upon curing.

Abstract: Disclosed is a photoresist stripping solution consisting essentially of (a) a quaternary ammonium hydroxide (e.g., tetramethylammonium hydroxide), (b) at least one water-soluble organic solvent selected from glycols and glycol ethers (e.g., propylene glycol, ethylene glycol, diethylene glycol monobutyl ether), and (c) a non-amine water-soluble organic solvent (e.g., dimethyl sulfoxide, N-methyl-2-pyrrolidone). The photoresist stripping solution of the invention has an excellent photoresist strippability, not causing damage of swelling/coloration to acrylic transparent films used in production of liquid-crystal panels and not causing damage to electrode materials. In particular, it has an excellent photoresist strippability to remove even a thick-film negative photoresist (photosensitive dry film) used in production of semiconductor chip packages (especially, wafer-level chip size packages, W-CSP), not causing damage to copper.