Abstract: An apparatus for manufacturing a single crystal by growing a single crystal according to a Czochralski method, the apparatus including: main chamber configured to house crucible configured to accommodate raw-material melt, and heater configured to heat raw-material melt; pulling chamber continuously provided at upper portion of main chamber and configured to accommodate single crystal grown and pulled; cooling cylinder extending from at least ceiling portion of main chamber toward raw-material melt so as to surround single crystal being pulled, cooling cylinder configured to be forcibly cooled with coolant; and auxiliary cooling cylinder fitted in an inside of cooling cylinder. Auxiliary cooling cylinder is made of any one or more materials of graphite, carbon composite, stainless steel, molybdenum, and tungsten. The auxiliary cooling cylinder has structure covering bottom surface of cooling cylinder facing raw-material melt. Gap between auxiliary cooling cylinder and bottom surface of cooling cylinder is 1.

Abstract: A right angle reflection prism includes first and second surfaces that form a right angle, and a third surface connected to the first and second surfaces. The right angle reflection prism causes a laser beam, which is made incident on the first surface and with which a material to be processed is irradiated, to be totally reflected by the third surface so as to be emitted from the second surface. A sensor detects a power of a laser beam that has passed through the third surface.

Abstract: The present laser processing device has a laser oscillator, a laser power supply, a control unit, an optical fiber cable, an electric cable, a processing head, an operation panels and a laser processing monitor unit. The laser processing monitor unit includes the control unit, the operation panel a sensor signal processing unites and a sensor unites as a basic configuration for a main function, that is, a monitoring function, and additionally includes a reference beam source, a reference beam source power supply, an optical measuring instrument and an optical path switching unit as a calibration unites for calibrating an optical sensor incorporated in the sensor unit.

Abstract: When a material to be welded is irradiated with a laser beam emitted by a processing head, a beam receiving units receive a radiated beam including a reflected beam of the laser beam and a monitoring beam that is caused by thermal radiation and is a beam having a wavelength different from that of the reflected beam. A spectrometer unit spectrally separates the reflected beam and the monitoring beam, and converts the monitoring beam into a first electric signal. A trigger unit converts the reflected beam into a second electric signal, and outputs a trigger signal when a level of the second electric signal is a predetermined threshold value or higher. When the trigger signal is input, a laser welding monitor starts, based on the first electric signal, a determination of whether or not laser welding of the material to be welded is normally performed.

Abstract: The present laser processing monitoring device is a monitoring device of a laser processing machine that performs desired laser processing by irradiating a given metal-based workpiece with a laser beam LB and melting the workpiece by means of laser energy, and includes a laser oscillator, a laser power supply, a controller, a guide beam generation unit, delivery optical fibers, a head (an emission unit and a sensor unit, an operation panel, and a monitoring unit. The monitoring unit is a laser monitoring device in the present embodiment, and is configured to mainly include the controller, the operation panel, a sensor signal processing unit, the sensor unit, and the like.

Abstract: The light-concentration density or laser power of a combined laser beam bundle, obtained by combining individual laser beams that are caused to oscillate by and are output from a plurality of single-emitter LDs, is increased efficiently, with high quality. On a bottom plate or a unit base 22 of the laser unit 10, there are disposed: a pair of stacked laser beam creation units 24L, 24R which are arranged with left-right symmetry with respect to a center line N; a single wavelength stabilizing element (VBG) 26 of which an incidence plane vertically intersects the center line N; a pair of primary anamorphic prisms 28L, 28R which are arranged separately on the right and left of the center line N; a mirror-type beam rotation element 30 disposed on the center line N; and a secondary anamorphic prism 32 disposed offset from the beam rotation element 30 in a direction (X-direction) perpendicular to the center line N.

Abstract: The light-concentration density or laser power of a combined laser beam bundle, obtained by combining individual laser beams that are caused to oscillate by and are output from a plurality of single-emitter LDs, is increased efficiently, with high quality. On a bottom plate or a unit base 22 of the laser unit 10, there are disposed: a pair of stacked laser beam creation units 24L, 24R which are arranged with left-right symmetry with respect to a center line N; a single wavelength stabilizing element (VBG) 26 of which an incidence plane vertically intersects the center line N; a pair of primary anamorphic prisms 28L, 28R which are arranged separately on the right and left of the center line N; a mirror-type beam rotation element 30 disposed on the center line N; and a secondary anamorphic prism 32 disposed offset from the beam rotation element 30 in a direction (X-direction) perpendicular to the center line N.

Abstract: [Technical Problem] It is an object to provide a device for a single-crystal growth and a method of a single-crystal growth in which even when materials that are different in, for example, a melting point or a diameter are to be grown, the conditions for the stable growth of a single crystal can be obtained and a high-quality single crystal having a desired diameter can hence be grown. In addition, the device and the method have a reduced fluctuation of heating intensity to facilitate a crystal growth. [Solution of Problem] A device for a single-crystal growth is provided with a raw material rod (14) that is supported by an upper crystal driving shaft (8), a seed crystal rod (16) that is supported by a lower crystal driving shaft (12), and a heating means, and a contact part of the raw material rod (14) with the seed crystal rod (16) is heated with a heating means to form a melting zone (18) and grow a single crystal.

Abstract: A method for producing a heat sink for cooling a semiconductor device including forming plural base members, the base member being each in plate or block-shape, the base member each having paths shaped on one or both sides of surfaces thereof, and the base member each having connecting regions on one or both sides of surfaces thereof, coating a coating layer of Au onto the base members, putting a solder of Sn or Au—Sn alloy onto connecting regions, the connecting region being coated with the coating layer of Au, assembling the base members together such that the base members are bonding to each other at the connecting region and the paths shaped on each of the surfaces of the base members form a communicating flow path for a cooling medium inside the bonded base members, and heating to diffuse Sn from the solder of Sn or Au—Sn alloy into the coating layer of Au, and to make a bond layer of alloy containing at least 91 wt % of Au and at most 9 wt % of Sn, the bond layer being interposed between connecting regi

Abstract: A method for producing a heat sink for cooling a semiconductor device including forming plural base members, the base member being each in plate or block-shape, the base member each having paths shaped on one or both sides of surfaces thereof, and the base member each having connecting regions on one or both sides of surfaces thereof, coating a coating layer of Au onto the base members, putting a solder of Sn or Au—Sn alloy onto connecting regions, the connecting region being coated with the coating layer of Au, assembling the base members together such that the base members are bonding to each other at the connecting region and the paths shaped on each of the surfaces of the base members form a communicating flow path for a cooling medium inside the bonded base members, and heating to diffuse Sn from the solder of Sn or Au—Sn alloy into the coating layer of Au, and to make a bond layer of alloy containing at least 91 wt % of Au and at most 9 wt % of Sn, the bond layer being interposed between connecting regi

Abstract: The present invention provides a liquid-cooling type heat sink which has a high pressure-resistibility and is resistible against the corrosion or erosion-corrosion or electrolytic etching, and a method for its production. The heat sink of the present invention comprises plural base members 21, 31 and 41, the base member being each in plate or block-shape, the base member each having paths 60 shaped on one or both sides of surfaces thereof, and the base members being bonded to each other, wherein a communicating flow path 60a including path 60, through holes 61, 62, and 63, is formed for a cooling medium to flow in and out. The base members are bonded to each other with a solder layer 54 made of Au—Sn alloy or Sn, while a coating layer of Au 53 is formed on each of the inner surfaces of the bonded base members.

Abstract: The present invention provides a liquid-cooling type heat sink which has a high pressure-resistibility and is resistible against the corrosion or erosion-corrosion or electrolytic etching, and a method for its production. The heat sink of the present invention comprises plural base members 21, 31 and 41, the base member being each in plate or block-shape, the base member each having paths 60 shaped on one or both sides of surfaces thereof, and the base members being bonded to each other, wherein a communicating flow path 60a including path 60, through holes 61, 62, and 63, is formed for a cooling medium to flow in and out. The base members are bonded to each other with a solder layer 54 made of Au—Sn alloy or Sn, while a coating layer of Au 53 is formed on each of the inner surfaces of the bonded base members.

Abstract: A switching circuit is improved in efficiency by including a switching corrector circuit for feeding back reversed polarity, differentiated switching pulses to the base of the switching transistor. In addition, temperature stability is achieved by providing a constant current source for a drive transistor which drives the switching transistor and for a control transistor which controls the drive transistor on the basis of the detected output of the circuit.