Patents by Inventor Atsutoshi Inokuchi
Atsutoshi Inokuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230386787Abstract: A substrate processing method for a substrate processing device includes (a) supplying a process gas with specific conditions to a processing container having therein a stage on which a workpiece having an etching target film and a mask on the etching target film is placed, (b) performing a plasma processing on the workpiece with first plasma generated from the process gas under a first plasma generation condition, (c) performing a plasma processing on the workpiece with second plasma generated from the process gas under a second plasma generation condition that is different from the first plasma generation condition in a radio-frequency power condition and a processing time, and is the same as the first plasma generation condition in other conditions, and (d) repeating (b) and (c).Type: ApplicationFiled: October 5, 2021Publication date: November 30, 2023Applicant: Tokyo Electron LimitedInventors: Atsutoshi INOKUCHI, Yasuhiko SAITO, Kiyoshi MAEDA
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Patent number: 11495439Abstract: An apparatus for plasma processing that performs an etching on a workpiece, includes: a container; a gas supply system for supplying a processing gas into the container; a plasma source for exciting the processing gas; a support for holding the workpiece inside the container; an exhaust system for exhausting an internal space of the container; electrode plates provided on an inner wall of the container; insulators for electrically insulating the electrode plates from each other; a DC power supply for independently applying a DC voltage to each of the electrode plates; and a controller for controlling the gas supply system, the plasma source, and the DC power supply. The controller controls the gas supply system, the plasma source, and the DC power supply such that the DC voltage is supplied to each electrode plate during execution of the etching or after completion of the etching.Type: GrantFiled: August 26, 2020Date of Patent: November 8, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Kohei Mizota, Shin Okamoto, Atsutoshi Inokuchi
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Publication number: 20210066048Abstract: An apparatus for plasma processing that performs an etching on a workpiece, includes: a container; a gas supply system for supplying a processing gas into the container; a plasma source for exciting the processing gas; a support for holding the workpiece inside the container; an exhaust system for exhausting an internal space of the container; electrode plates provided on an inner wall of the container; insulators for electrically insulating the electrode plates from each other; a DC power supply for independently applying a DC voltage to each of the electrode plates; and a controller for controlling the gas supply system, the plasma source, and the DC power supply. The controller controls the gas supply system, the plasma source, and the DC power supply such that the DC voltage is supplied to each electrode plate during execution of the etching or after completion of the etching.Type: ApplicationFiled: August 26, 2020Publication date: March 4, 2021Inventors: Kohei MIZOTA, Shin OKAMOTO, Atsutoshi INOKUCHI
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Patent number: 9767994Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 ?m to 70 ?m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 ?m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.Type: GrantFiled: November 17, 2014Date of Patent: September 19, 2017Assignees: TOKYO ELECTRON LIMITED, NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITYInventors: Masahiro Okesaku, Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka, Toshihisa Nozawa, Atsutoshi Inokuchi, Kiyotaka Ishibashi
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Patent number: 9378942Abstract: Disclosed is a method for depositing an insulating film with a high coverage through a low temperature process. The deposition method deposits an insulating film on a substrate using a deposition apparatus which includes a processing container that defines a processing space in which plasma is generated, a gas supply unit configured to supply a gas into the processing space, and a plasma generating unit configured to generate plasma by supplying microwave into the processing container. The deposition method includes depositing an insulating film that includes SiN on the substrate by supplying into a gas formed by adding H2 to trisilylamine into the processing container and generating plasma.Type: GrantFiled: September 30, 2013Date of Patent: June 28, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Takehisa Saito, Atsutoshi Inokuchi, Shogo Masuda
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Publication number: 20150069674Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 ?m to 70 ?m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 ?m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.Type: ApplicationFiled: November 17, 2014Publication date: March 12, 2015Inventors: Masahiro OKESAKU, Tadahiro OHMI, Tetsuya GOTO, Takaaki MATSUOKA, Toshihisa NOZAWA, Atsutoshi INOKUCHI, Kiyotaka ISHIBASHI
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Patent number: 8915999Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 ?m to 70 ?m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 ?m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.Type: GrantFiled: September 26, 2007Date of Patent: December 23, 2014Assignees: Tokyo Electron Limited, National University Corporation Tohoku UniversityInventors: Masahiro Okesaku, Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka, Toshihisa Nozawa, Atsutoshi Inokuchi, Kiyotaka Ishibashi
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Publication number: 20140099734Abstract: Disclosed is a method for depositing an insulating film with a high coverage through a low temperature process. The deposition method deposits an insulating film on a substrate using a deposition apparatus which includes a processing container that defines a processing space in which plasma is generated, a gas supply unit configured to supply a gas into the processing space, and a plasma generating unit configured to generate plasma by supplying microwave into the processing container. The deposition method includes depositing an insulating film that includes SiN on the substrate by supplying into a gas formed by adding H2 to trisilylamine into the processing container and generating plasma.Type: ApplicationFiled: September 30, 2013Publication date: April 10, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Takehisa SAITO, Atsutoshi INOKUCHI, Shogo MASUDA
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Patent number: 8592810Abstract: It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.Type: GrantFiled: October 7, 2010Date of Patent: November 26, 2013Assignees: National University Corporation Tohoku University, Rohm Co., Ltd.Inventors: Tadahiro Ohmi, Hirokazu Asahara, Atsutoshi Inokuchi
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Publication number: 20120205652Abstract: It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.Type: ApplicationFiled: October 7, 2010Publication date: August 16, 2012Inventors: Tadahiro Ohmi, Hirokazu Asahara, Atsutoshi Inokuchi
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Patent number: 8188468Abstract: An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.Type: GrantFiled: May 2, 2008Date of Patent: May 29, 2012Assignees: National University Corporation Tohoku University, Rohm Co., Ltd., Tokyo Electron Limited, Ube Industries, Ltd.Inventors: Tadahiro Ohmi, Hirokazu Asahara, Atsutoshi Inokuchi, Kohei Watanuki
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Publication number: 20110215384Abstract: In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost. As an insulating film for use in a shallow trench (ST) element isolation region and/or a lowermost-layer interlayer insulating film, use is made of an insulating coating film that can be coated by spin coating. The insulating coating film has a composition expressed by ((CH3)nSiO2-n/2)x(SiO2)1-x(where n=1 to 3 and 0?x?1.0) and a film with a different relative permittivity k is formed by selecting heat treatment conditions. The STI element isolation region can be formed by modifying the insulating coating film completely to a SiO2 film, while the interlayer insulating film with a small relative permittivity k can be formed by converting it to a state not completely modified.Type: ApplicationFiled: August 14, 2008Publication date: September 8, 2011Applicants: National University Corporation Tohoku University, Tokyo Electron Limited, Ube Industries, Ltd., Ube-Nitto Kasei Co., Ltd.Inventors: Tadahiro Ohmi, Takaaki Matsuoka, Atsutoshi Inokuchi, Kohei Watanuki, Tadashi Koike, Tatsuhiko Adachi
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Publication number: 20110127075Abstract: An insulative coat film comprising one or two or more kinds of oxides having a dielectric constant (k) of 2.5 or smaller and expressed by a general formula of ((CH3)nSiO2-n/2)x(SiO2)1-x (where n=1 to 3, x?1) is used to form an interlayer insulation film. The insulative coat film applied by spin-coating is flat without reflecting underlying unevenness, and the heat-treated film has surface roughness of 1 nm or less in Ra and 20 nm or less in a P-V value. The interlayer insulation film containing the insulative coat film can have a wiring structure and an electrode formed only by etching without need of a CMP process.Type: ApplicationFiled: August 14, 2008Publication date: June 2, 2011Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED, UBE INDUSTRIES, LTD., UBE-NITTO KASEI CO., LTD.Inventors: Tadahiro Ohmi, Takaaki Matsuoka, Atsutoshi Inokuchi, Kohei Watanuki, Tadashi Koike, Tatsuhiko Adachi
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Patent number: 7923819Abstract: A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.Type: GrantFiled: November 8, 2007Date of Patent: April 12, 2011Assignees: National Iniversity Corporation Tohoku University, Tokyo Electron LimitedInventors: Tadahiro Ohmi, Seiji Yasuda, Atsutoshi Inokuchi, Takaaki Matsuoka, Kohei Kawamura
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Publication number: 20100178775Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 ?m to 70 ?m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 ?m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.Type: ApplicationFiled: September 26, 2007Publication date: July 15, 2010Applicants: TOKYO ELECTRON LIMITED, NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITYInventors: Masahiro Okesaku, Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka, Toshihisa Nozawa, Atsutoshi Inokuchi, Kiyotaka Ishibashi
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Publication number: 20100139762Abstract: An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.Type: ApplicationFiled: May 2, 2008Publication date: June 10, 2010Applicants: NATIONAL UNIVERSITY CORP TOHOKU UNIVERSITY, ROHM CO., LTD., TOKYO ELECTRON LIMITED, UBE INDUSTRIES, LTD.Inventors: Tadahiro Ohmi, Hirokazu Asahara, Atsutoshi Inokuchi, Kohei Watanuki
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Publication number: 20100101834Abstract: An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable.Type: ApplicationFiled: February 22, 2008Publication date: April 29, 2010Applicants: NATIONAL UNIVERSITY CORP. TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED, ZEON CORPORATIONInventors: Tadahiro Ohmi, Seiji Yasuda, Atsutoshi Inokuchi, Takaaki Matsuoka, Kohei Kawamura, Masahiro Nakamura
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Publication number: 20100032844Abstract: A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.Type: ApplicationFiled: November 8, 2007Publication date: February 11, 2010Applicants: National University Corporation Tohoku University, Tokyo Electron LimitedInventors: Tadahiro Ohmi, Seiji Yasuda, Atsutoshi Inokuchi, Takaaki Matsuoka, Kohei Kawamura