Abstract: In a manufacturing method of a semiconductor device, a substrate and a plurality of semiconductor chips stacked on the substrate are connected to each other by a ball bonding method adopting a reverse method. Specifically, after first bonding on a bonding pad on the substrate, a gold wire is led to a bonding pad of a semiconductor chip of the bottom layer, and by second bonding, a wire for connecting the substrate and the semiconductor chip of the bottom layer is formed. Similarly, other semiconductor chips are also connected to the substrate from the layer on the bottom. As a result, it is possible to reduce the package size, to provide a sufficient clearance between wires, and to reduce restrictions on combinations of semiconductor chips to be stacked.

Abstract: In a manufacturing method of a semiconductor device, a substrate and a plurality of semiconductor chips stacked on the substrate are connected to each other by a ball bonding method adopting a reverse method. Specifically, after first bonding on a bonding pad on the substrate, a gold wire is led to a bonding pad of a semiconductor chip of the bottom layer, and by second bonding, a wire for connecting the substrate and the semiconductor chip of the bottom layer is formed. Similarly, other semiconductor chips are also connected to the substrate from the layer on the bottom. As a result, it is possible to reduce the package size, to provide a sufficient clearance between wires, and to reduce restrictions on combinations of semiconductor chips to be stacked.

Abstract: In a manufacturing method of a semiconductor device, a substrate and a plurality of semiconductor chips stacked on the substrate are connected to each other by a ball bonding method adopting a reverse method. Specifically, after first bonding on a bonding pad on the substrate, a gold wire is led to a bonding pad of a semiconductor chip of the bottom layer, and by second bonding, a wire for connecting the substrate and the semiconductor chip of the bottom layer is formed. Similarly, other semiconductor chips are also connected to the substrate from the layer on the bottom. As a result, it is possible to reduce the package size, to provide a sufficient clearance between wires, and to reduce restrictions on combinations of semiconductor chips to be stacked.

Abstract: In a manufacturing method of a semiconductor device, a substrate and a plurality of semiconductor chips stacked on the substrate are connected to each other by a ball bonding method adopting a reverse method. Specifically, after first bonding on a bonding pad on the substrate, a gold wire is led to a bonding pad of a semiconductor chip of the bottom layer, and by second bonding, a wire for connecting the substrate and the semiconductor chip of the bottom layer is formed. Similarly, other semiconductor chips are also connected to the substrate from the layer on the bottom. As a result, it is possible to reduce the package size, to provide a sufficient clearance between wires, and to reduce restrictions on combinations of semiconductor chips to be stacked.

Abstract: A semiconductor device includes a first semiconductor chip and a second semiconductor chip which are laminated on a substrate, wherein electrode terminals which are provided on each of the semiconductor chips are electrically connected to the substrate by first bonding wires and second bonding wires, and an insulation layer is formed between the second bonding wires and the first semiconductor chip.

Abstract: In a manufacturing method of a semiconductor device, a substrate and a plurality of semiconductor chips stacked on the substrate are connected to each other by a ball bonding method adopting a reverse method. Specifically, after first bonding on a bonding pad on the substrate, a gold wire is led to a bonding pad of a semiconductor chip of the bottom layer, and by second bonding, a wire for connecting the substrate and the semiconductor chip of the bottom layer is formed. Similarly, other semiconductor chips are also connected to the substrate from the layer on the bottom. As a result, it is possible to reduce the package size, to provide a sufficient clearance between wires, and to reduce restrictions on combinations of semiconductor chips to be stacked.

Abstract: A semiconductor device includes a first semiconductor chip and a second semiconductor chip which are laminated on a substrate, wherein electrode terminals which are provided on each of the semiconductor chips are electrically connected to the substrate by first bonding wires and second bonding wires, and an insulation layer is formed between the second bonding wires and the first semiconductor chip.

Abstract: A first semiconductor chip is produced by affixing a thermo-compression sheet to the back surface of a wafer having a circuit formed on its front surface. The first semiconductor chip is mounted on a circuit board including an insulating substrate and a wiring layer provided on the insulating substrate so that the back surface of the first semiconductor chip faces the circuit board. A second semiconductor chip produced in the same manner as the first semiconductor chip is mounted on the first semiconductor chip with its back surface facing the first semiconductor chip. Each of the first and second semiconductor chips is wire-bonded to the wiring layer with a wire. The first and second semiconductor chips and the wire are sealed with a sealing resin. The wiring layer is connected to external connection terminals through via holes provided in the insulating substrate.

Abstract: A first semiconductor chip is produced by affixing a thermo-compression sheet to the back surface of a wafer having a circuit formed on its front surface. The first semiconductor chip is mounted on a circuit board including an insulating substrate and a wiring layer provided on the insulating substrate so that the back surface of the first semiconductor chip faces the circuit board. A second semiconductor chip produced in the same manner as the first semiconductor chip is mounted on the first semiconductor chip with its back surface facing the first semiconductor chip. Each of the first and second semiconductor chips is wire-bonded to the wiring layer with a wire. The first and second semiconductor chips and the wire are sealed with a sealing resin. The wiring layer is connected to external connection terminals through via holes provided in the insulating substrate.

Abstract: A first semiconductor chip is produced by affixing a thermo-compression sheet to the back surface of a wafer having a circuit formed on its front surface. The first semiconductor chip is mounted on a circuit board including an insulating substrate and a wiring layer provided on the insulating substrate so that the back surface of the first semiconductor chip faces the circuit board. A second semiconductor chip produced in the same manner as the first semiconductor chip is mounted on the first semiconductor chip with its back surface facing the first semiconductor chip. Each of the first and second semiconductor chips is wire-bonded to the wiring layer with a wire. The first and second semiconductor chips and the wire are sealed with a sealing resin. The wiring layer is connected to external connection terminals through via holes provided in the insulating substrate.

Abstract: A first semiconductor chip is produced by affixing a thermo-compression sheet to the back surface of a wafer having a circuit formed on its front surface. The first semiconductor chip is mounted on a circuit board including an insulating substrate and a wiring layer provided on the insulating substrate so that the back surface of the first semiconductor chip faces the circuit board. A second semiconductor chip produced in the same manner as the first semiconductor chip is mounted on the first semiconductor chip with its back surface facing the first semiconductor chip. Each of the first and second semiconductor chips is wire-bonded to the wiring layer with a wire. The first and second semiconductor chips and the wire are sealed with a sealing resin. The wiring layer is connected to external connection terminals through via holes provided in the insulating substrate.