Abstract: A first electrode layer, which comes into contact with a source region, and a second electrode layer, which comes into contact with a body (back gate) region, are provided. The first and second electrode layers are insulated from each other and are extended in a direction different from an extending direction of a trench. It is possible to individually apply potentials to the first and second electrode layers, and to perform control for preventing a reverse current caused by a parasitic diode. Therefore, a bidirectional switching element can be realized by use of one MOSFET.

Abstract: In a drive circuit of a half-bridge inverter circuit, a stable operation cannot be performed at a start-up time and a problem exists such that if a high side output signal is first outputted, main switching elements and are simultaneously turned on. In the present invention, a start-up circuit comprising a latch circuit and a gate circuit are provided, the latch circuit is set while prioritizing a low-side signal, and a low-side output signal is always first made high level, thereby realizing a half-bridge inverter circuit which can start up wit a stability.

Abstract: In a drive circuit of a half-bridge inverter circuit, a stable operation cannot be performed at a start-up time and a problem exists such that if a high side output signal is first outputted, main switching elements and are simultaneously turned on. In the present invention, a start-up circuit comprising a latch circuit and a gate circuit are provided, the latch circuit is set while prioritizing a low-side signal, and a low-side output signal is always first made high level, thereby realizing a half-bridge inverter circuit which can start up wit a stability.