Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: Disclosed are a composition for forming a zinc oxide-based film, said composition containing, as an essential component, a zinc compound represented by the following formula (1): wherein R1 and R2 mutually independently represent an alkyl group having 1 to 4 carbon atoms, a process for producing the zinc oxide-based film, and the zinc compound. The composition makes it possible to form a high-quality zinc oxide-based film, which has transparency, homogeneity and electrical conductivity, at a low temperature of 300° C. or lower.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: Disclosed are a composition for forming a zinc oxide-based film, said composition containing, as an essential component, a zinc compound represented by the following formula (1): wherein R1 and R2 mutually independently represent an alkyl group having 1 to 4 carbon atoms, a process for producing the zinc oxide-based film, and the zinc compound. The composition makes it possible to form a high-quality zinc oxide-based film, which has transparency, homogeneity and electrical conductivity, at a low temperature of 300° C. or lower.

Abstract: A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin. In formula (1), M is titanium, zirconium, or hafnium; X is a halogen atom; and m is 1 or 2.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: Disclosed is a composition for forming a thick oxide superconductor film, the oxide being an RE-BA—Cu based oxide, wherein RE is at least one element selected from the group consisting of Y, Nd, Sm, Gd, Eu, Yb, Pr, and Ho. The composition contains an RE salt of a keto acid having 4 to 8 carbon atoms as an RE component, barium trifluoroacetate as a Ba component, at least one copper salt selected from the group consisting of a copper salt of a branched saturated aliphatic carboxylic acid having 6 to 16 carbon atoms and a copper salt of an alicyclic carboxylic acid having 6 to 16 carbon atoms as a Cu component, and an organic solvent dissolving these metal salt components. In the composition, the RE to Ba to Cu molar ratio is 1:1.3 to 2.2:2.4 to 3.6 and the content of the organic solvent is 25% to 80% by weight.

Abstract: Disclosed is a composition for forming a thick oxide superconductor film, the oxide being an RE-BA-Cu based oxide, wherein RE is at least one element selected from the group consisting of Y, Nd, Sm, Gd, Eu, Yb, Pr, and Ho. The composition contains an RE salt of a keto acid having 4 to 8 carbon atoms as an RE component, barium trifluoroacetate as a Ba component, at least one copper salt selected from the group consisting of a copper salt of a branched saturated aliphatic carboxylic acid having 6 to 16 carbon atoms and a copper salt of an alicyclic carboxylic acid having 6 to 16 carbon atoms as a Cu component, and an organic solvent dissolving these metal salt components. In the composition, the RE to Ba to Cu molar ratio is 1:1.3 to 2.2:2.4 to 3.

Abstract: A coating formulation contains the following components (A), (B) and (C): (A) an organic acid-titanium compound having at least one titanium atom and at least one C2-12 aliphatic organic acid residual group as essential constituents and having no constituent other than the essential constituents, (B) fine particles of a titanate-based compound, said fine particles having an average particle size of from 10 to 100 nm, and (C) an organic solvent. A content of the components (A) is from 0.1 to 1.5 mol/kg in terms of titanium atoms, and a content of the component (B) is from 0.1 to 1.5 mol/kg in terms of titanium atoms. A production process for a titanate-based ceramic film, which makes use of the coating formulation, is also disclosed.

Abstract: A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin. In formula (1), M is titanium, zirconium, or hafnium; X is a halogen atom; and m is 1 or 2.

Abstract: The present invention provides a niobium 2-ethylhexanoate derivative having a niobium content of from 13 to 16 mass % and a carbon content within a range of from 50 to 58 mass %, the niobium 2-ethylhexanoate derivative consisting only of: niobium atoms, oxygen atoms, and 2-ethylhexanoic acid residues; the niobium 2-ethylhexanoate derivative can be produced by reacting pentakis(alkoxy)niobium with 2-ethylhexanoic acid; further, the organic acid metal salt composition of the present invention includes the niobium 2-ethylhexanoate derivative, a metal precursor other than niobium, and at least one kind of an organic solvent; and the thin film including a niobium element and metal other than niobium can be formed on a substrate by applying the organic acid metal salt composition on the substrate and heating the substrate with the applied organic acid metal salt composition.

Abstract: The present invention provides a niobium 2-ethylhexanoate derivative having a niobium content of from 13 to 16 mass % and a carbon content within a range of from 50 to 58 mass %, the niobium 2-ethylhexanoate derivative consisting only of: niobium atoms, oxygen atoms, and 2-ethylhexanoic acid residues; the niobium 2-ethylhexanoate derivative can be produced by reacting pentakis(alkoxy)niobium with 2-ethylhexanoic acid; further, the organic acid metal salt composition of the present invention includes the niobium 2-ethylhexanoate derivative, a metal precursor other than niobium, and at least one kind of an organic solvent; and the thin film including a niobium element and metal other than niobium can be formed on a substrate by applying the organic acid metal salt composition on the substrate and heating the substrate with the applied organic acid metal salt composition.

Abstract: A coating formulation contains the following components (A), (B) and (C): (A) an organic acid-titanium compound having at least one titanium atom and at least one C2-12 aliphatic organic acid residual group as essential constituents and having no constituent other than the essential constituents, (B) fine particles of a titanate-based compound, said fine particles having an average particle size of from 10 to 100 nm, and (C) an organic solvent. A content of the components (A) is from 0.1 to 1.5 mol/kg in terms of titanium atoms, and a content of the component (B) is from 0.1 to 1.5 mol/kg in terms of titanium atoms. A production process for a titanate-based ceramic film, which makes use of the coating formulation, is also disclosed.

Abstract: A tris(sec-butylcyclopentadienyl) complex of a rare earth metal represented by general formula (I). The complex is excellent in heat resistance and volatility and is liquid, which is advantageous for use as a thin film forming material. wherein M is a rare earth metal atom.

Abstract: A process of producing a strontium titanate, barium titanate or barium strontium titanate thin film by chemical vapor deposition which comprises using a titanium compound represented by formula (I): wherein R1 represents a hydrogen atom or a methyl group; and R2 and R3 each represent a methyl group or an ethyl group, or R2 and R3 are connected together to form a methylene group, a methylmethylene group or a dimethylmethylene group.

Abstract: A process of producing a strontium titanate, barium titanate or barium strontium titanate thin film by chemical vapor deposition which comprises using a titanium compound represented by formula (I): 1