Patents by Inventor Atuko Sugawara

Atuko Sugawara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Schottky barrier contact to compound semiconductor with three layer refractory metalization and high phosphorous content glass passivation
    Patent number: 4321612
    Abstract: A Schottky barrier type compound semiconductor device includes an N type compound semiconductor substrate, an insulation layer having a penetrating hole through which part of the substrate is exposed, and a layer of high melting metal formed through the penetrating hole to form a Schottky barrier with the substrate. The insulation layer includes a phosphosilicate glass layer containing phosphorus at a concentration of 1.times.10.sup.21 /cm.sup.3 or more and contacting the substrate.
    Type: Grant
    Filed: January 2, 1980
    Date of Patent: March 23, 1982
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Eiji Murata, Hideaki Izumi, Atuko Sugawara, Susumu Okano