Patents by Inventor Aubrey L. Helms, Jr.

Aubrey L. Helms, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • APPARATUS WITH MULTIPLE HEATING SYSTEMS FOR IN-LINE THERMAL TREATMENT OF SUBSTRATES
    Publication number: 20120085281
    Abstract: The present invention relates to in-line equipment used to process substrates. In some applications, the equipment is used in the in-line manufacture PV cells or modules. In some embodiments, a heating system is provided that comprises a plurality of heating technologies for the heat treatment of substrates wherein a first heating system is used to rapidly raise the substrate temperature to the desired set point and a second heating system is used to maintain the substrate at the temperature set point throughout the thermal treatment process.
    Type: Application
    Filed: October 6, 2011
    Publication date: April 12, 2012
    Applicant: Sandvik Thermal Process, Inc.
    Inventors: Aubrey L. HELMS, JR., Kevin B. Peck, James T. Johnson, Pontus K.H. Nilsson, Reese Reynolds
  • Atomic layer deposition of hafnium-based high-k dielectric
    Patent number: 7205247
    Abstract: A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
    Type: Grant
    Filed: September 29, 2004
    Date of Patent: April 17, 2007
    Assignee: Aviza Technology, Inc.
    Inventors: Sang-In Lee, Jon S. Owyang, Yoshihide Senzaki, Aubrey L. Helms, Jr., Karem Kapkin
  • Thin coatings for use in semiconductor integrated circuits and processes as antireflection coatings consisting of tungsten silicide
    Patent number: 5106786
    Abstract: An antireflection coating (21) for use in integrated circuit processing consists of a film of tungsten silicide (WSi.sub.0.45) or tungsten silicon nitride (WSiN). These coatings are preferably made by sputtering, with the tungsten silicon nitride coating being made by sputtering in a nitrogen-containing atmosphere.
    Type: Grant
    Filed: October 23, 1989
    Date of Patent: April 21, 1992
    Assignee: AT&T Bell Laboratories
    Inventors: Michael F. Brady, Aubrey L. Helms, Jr.
  • Photolithographic processes using thin coatings of refractory metal silicon nitrides as antireflection layers
    Patent number: 5066615
    Abstract: An antireflection coating (21) for use in integrated circuit processing consists of a film of x-silicon-nitride, where x is a metal from the group consisting of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten. These coatings are preferably made by sputtering, with the x silicon nitride coating being made by sputtering in a nitrogen-containing atmosphere.
    Type: Grant
    Filed: August 6, 1990
    Date of Patent: November 19, 1991
    Assignee: AT&T Bell Laboratories
    Inventors: Michael F. Brady, John K. Dorey, II, Aubrey L. Helms, Jr.