Abstract: A method for manufacturing a capacitive device comprising the following steps: a) providing a metallic layer, b) depositing a full-sheet aluminium layer, c) structuring pores in the aluminium layer by a full-sheet anodic etching process, subsequently to which a continuous porous alumina layer is obtained comprising a first main face and a second main face, longitudinal pores extending from the first main face to the second main face, d) forming a capacitive area at a first area of the porous alumina layer, e) forming an upper electrode over the capacitive area, f) forming a contact resumption at a second area of the porous alumina layer, g) forming a lower electrode over the contact resumption.

Abstract: A method for producing a layer of AlN having substantially vertical sides relative to the surface of a substrate, including: the formation of an AlN growth layer on a substrate, the deposition of the AlN layer, on at least said growth layer, the formation of a mask layer over the AlN layer, at least one edge of which is aligned with at least one edge or side of the growth layer, in a plane which is substantially perpendicular to a surface of the substrate or a surface of the growth layer, and the etching of the AlN layer.

Abstract: A method is disclosed, for producing a layer of AlN having substantially vertical sides relative to the surface of a substrate, comprising: the formation of an AlN growth layer on a substrate, the deposition of the AlN layer, on at least said growth layer, the formation of a mask layer over the AlN layer, at least one edge of which is aligned with at least one edge or side of the growth layer, in a plane which is substantially perpendicular to a surface of the substrate or a surface of the growth layer, the etching of the AlN layer.