Patents by Inventor Audrey Charles

Audrey Charles has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8906248
    Abstract: A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon nitride etch gas into a plasma to etch the silicon nitride layer, and stopping the flow of the silicon nitride etch gas. The silicon layer is, comprising flowing a silicon etch gas, wherein the silicon etch gas comprises SF6 or SiF4, forming the silicon etch gas into a, and stopping the flow of the silicon etch gas. The silicon oxide layer is etched in the plasma processing chamber, comprising flowing a silicon oxide etch gas, forming the silicon oxide etch gas into a plasma, and stopping the flow of the silicon oxide etch gas.
    Type: Grant
    Filed: December 13, 2011
    Date of Patent: December 9, 2014
    Assignee: Lam Research Corporation
    Inventors: Siyi Li, Robert C. Hefty, Mark Todhunter Robson, James R. Bowers, Audrey Charles
  • Publication number: 20130149869
    Abstract: A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon nitride etch gas into a plasma to etch the silicon nitride layer, and stopping the flow of the silicon nitride etch gas. The silicon layer is, comprising flowing a silicon etch gas, wherein the silicon etch gas comprises SF6 or SiF4, forming the silicon etch gas into a, and stopping the flow of the silicon etch gas. The silicon oxide layer is etched in the plasma processing chamber, comprising flowing a silicon oxide etch gas, forming the silicon oxide etch gas into a plasma, and stopping the flow of the silicon oxide etch gas.
    Type: Application
    Filed: December 13, 2011
    Publication date: June 13, 2013
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Siyi LI, Robert C. HEFTY, Mark Todhunter ROBSON, James R. BOWERS, Audrey CHARLES
  • Patent number: 7081478
    Abstract: Mixed zeaxanthin C8–C20 carboxylic acid esters in which the mixed zeaxanthin esters constitute about 50 mg/g or more of the concentrate and wherein the zeaxanthin is about 20 percent or more of the total carotenoids present when assayed after saponification are disclosed, as are the products that can be made from such a concentrate, as well as the several uses for mixed zeaxanthin esters.
    Type: Grant
    Filed: June 3, 2003
    Date of Patent: July 25, 2006
    Assignee: Chrysantis, Inc.
    Inventors: Randal Hauptmann, Manuel Pavon, Audrey Charles
  • Publication number: 20040022881
    Abstract: Mixed zeaxanthin C8-C20 carboxylic acid esters in which the mixed zeaxanthin esters constitute about 50 mg/g or more of the concentrate and wherein the zeaxanthin is about 20 percent or more of the total carotenoids present when assayed after saponification are disclosed, as are the products that can be made from such a concentrate, as well as the several uses for mixed zeaxanthin esters.
    Type: Application
    Filed: June 3, 2003
    Publication date: February 5, 2004
    Inventors: Randal Hauptmann, Manuel Pavon, Audrey Charles
  • Publication number: 20020026659
    Abstract: The present invention relates to developed seed that is singulated and free-flowing, and comprises a modified root structure whose root development is interrupted and altered, but that root development is capable of resuming when the developed seed is sown in a suitable environment. The developed seed can exhibit an emerged hypocotyl or lack an emerged hypocotyl. The developed seed is prepared as desiccation-intolerant seed and can be converted to be desiccation-tolerant. The present invention also relates to methods of making the developed seed.
    Type: Application
    Filed: December 28, 2000
    Publication date: February 28, 2002
    Inventors: Alan D. Blowers, Robert D. Conrad, Kimberly A. Funk, Zubin Khambatta, Audrey Charles