Abstract: A method of analysis of the state of operation of a machine including a learning step supplementing a reference database with one or more thresholds for one or more indicators calculated on the basis of signals delivered by a sensor associated with the machine, the learning step including the following operations implemented by a computer processing unit; an acquisition of signals characteristic of normal operation and of abnormal operation of the machine; of each of the signals characteristic of normal operation, formation of at least one so-called deviation signal by implementing a mathematical operation having as attributes the signal characteristic of normal operation and one of the signals characteristic of normal or abnormal operation other than the signal characteristic of the normal operation; for each of the deviation signals, calculation of an indicator; determination of an indicator threshold representative of a limit between normal operation and abnormal operation of the machine.

Abstract: A method of analysis of the state of operation of a machine including a learning step supplementing a reference database with one or more thresholds for one or more indicators calculated on the basis of signals delivered by a sensor associated with the machine, the learning step including the following operations implemented by a computer processing unit; an acquisition of signals characteristic of normal operation and of abnormal operation of the machine: of each of the signals characteristic of normal operation, formation of at least one so-called deviation signal by implementing a mathematical operation having as attributes the signal characteristic of normal operation and one of the signals characteristic of normal or abnormal operation other than the signal characteristic of the normal operation; for each of the deviation signals, calculation of an indicator; determination of an indicator threshold representative of a limit between normal operation and abnormal operation of the machine.

Abstract: A semiconductor product includes an exposed Hafnium-containing layer. The Hafnium-containing layer is treated with a solution that includes a low ionic strength organic substance.

Abstract: It is one object to devise a solution which is suitable for a wet treatment of Hafnium containing high-k materials. Furthermore, it is an object to devise a use of this solution in the field of semiconductor device manufacturing. It is also an objective of the invention to devise a process to this aim.

Abstract: A method for manufacturing contact structures for DRAM semiconductor memories is disclosed. In one embodiment, contact openings are formed in a support area after execution of high-temperature processes for activating doping agents and repairing crystal defects. A low contact resistance between a conductive contact opening filling and an adjacent semiconductor substrate is achieved by forming a cobalt silicide or nickel silicide.

Abstract: Systems and methods include introducing a semiconductor wafer into a process chamber. An etching chemistry is injected into the process chamber to etch a patterned layer and to release free-standing nanostructures on the semiconductor wafer. The etching chemistry includes a supercritical or liquid carbon dioxide fluid and an etching solution. The semiconductor wafer is rinsed by flooding a supercritical or liquid carbon dioxide fluid into the process chamber. The semiconductor wafer is dried by venting out supercritical or liquid carbon dioxide fluid from the process chamber.

Abstract: Systems and methods include introducing a semiconductor wafer into a process chamber. An etching chemistry is injected into the process chamber to etch a patterned layer and to release free-standing nanostructures on the semiconductor wafer. The etching chemistry includes a supercritical or liquid carbon dioxide fluid and an etching solution. The semiconductor wafer is rinsed by flooding a supercritical or liquid carbon dioxide fluid into the process chamber. The semiconductor wafer is dried by venting out supercritical or liquid carbon dioxide fluid from the process chamber.