Patents by Inventor Audrey P. Lin

Audrey P. Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Situ stringer removal during polysilicon capacitor cell plate delineation
    Patent number: 5378648
    Abstract: Capacitors such as storage cells for Dynamic Random Access Memories are formed in a process for etching a polycrystalline silicon layer to form a storage cell during the manufacture of a semiconductor device. The etch results in a cell having reduced undercutting of the poly cell, and eliminates the formation of poly stringers. The inventive etch comprises the use of NF.sub.3 and/or SF.sub.6 during a magnetically enhanced low pressure reactive ion etch using a carbon-free etch gas of Cl.sub.2.
    Type: Grant
    Filed: December 2, 1993
    Date of Patent: January 3, 1995
    Assignee: Micron Technology, Inc.
    Inventors: Audrey P. Lin, Guy T. Blalock