Patents by Inventor Augus Tai

Augus Tai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming silicides with reduced tailing on silicon germanium and silicon
    Patent number: 7816686
    Abstract: A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; an epitaxial region having at least a portion in the semiconductor substrate and adjacent to the gate stack, wherein the epitaxial region comprises an impurity of a first conductivity type; a first portion of the semiconductor substrate adjoining the epitaxial region, wherein the first portion of the semiconductor substrate is of the first conductivity type; and a second portion of the semiconductor substrate adjoining the first portion. The second portion of the semiconductor substrate is of a second conductivity type opposite the first conductivity type. A silicide region is formed on the epitaxial region and the first and the second portions of the semiconductor substrate.
    Type: Grant
    Filed: June 12, 2007
    Date of Patent: October 19, 2010
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Hua Pan, Ken Liao, Augus Tai, Harry Chuang
  • Forming silicides with reduced tailing on silicon germanium and silicon
    Publication number: 20080308842
    Abstract: A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; an epitaxial region having at least a portion in the semiconductor substrate and adjacent to the gate stack, wherein the epitaxial region comprises an impurity of a first conductivity type; a first portion of the semiconductor substrate adjoining the epitaxial region, wherein the first portion of the semiconductor substrate is of the first conductivity type; and a second portion of the semiconductor substrate adjoining the first portion. The second portion of the semiconductor substrate is of a second conductivity type opposite the first conductivity type. A silicide region is formed on the epitaxial region and the first and the second portions of the semiconductor substrate.
    Type: Application
    Filed: June 12, 2007
    Publication date: December 18, 2008
    Inventors: Kuo-Hua Pan, Ken Liao, Augus Tai, Harry Chuang