Abstract: A method and apparatus for ultrapurification of indium and other metals having a wide liquid range and low vapor pressure. The purification method involves producing a small-diameter stream of liquified metal, directing this stream along a predetermined path while subjecting it to a high vacuum and heating it to vaporize volatile impurities, then collecting and solidifying the purified stream. The method is optimally practiced in the ultrahigh vacuum and substantially zero gravity environment of outer space. Apparatus for practicing the method in outer space employs a containerless refining zone in which the stream of liquid metal being purified is directed along a path defined by edges of thin guides fabricated of material which is not substantially wetted by the liquid metal. Heating of the liquid metal stream is accomplished via RF coils surrounding the guides defining the stream path. Upon collection, the purified metal stream may be further subjected to a secondary refining process.

Abstract: An improved apparatus and method for growing crystals from a melt employing a heat pipe, consisting of one or more sections, each section serving to control temperature and thermal gradients in the crystal as it forms inside the pipe.

Abstract: A method of forming, by melt-spinning techniques, a laminated ribbon structure consisting, for example, of a semiconductor disposed on a metal ribbon substrate. The substrate may be 10-50 .mu.m thick and the semiconductor may be 10-50 .mu.m thick, for example; typically the ribbon width is about one millimeter to several centimeters.

Abstract: A method of forming, by melt-spinning techniques, a laminated ribbon structure consisting, for example, of a semiconductor disposed on a metal ribbon substrate. The substrate may be 10-50 .mu.m thick and the semiconductor may be 10-50 .mu.m thick, for example; typically the ribbon width is about one millimeter to several centimeters.

Abstract: A method of forming, by melt-spinning techniques, a laminated ribbon structure consisting, for example, of a semiconductor disposed on a metal ribbon substrate. The substrate may be 10-100 .mu.m thick and the semiconductor may be 10-100 .mu.m thick, for example; typically the ribbon width is about one millimeter to several centimeters.