Abstract: Disclosed is a semi-open method of growing an epitaxial HgCdTe layer on a CdTe substrate, including the steps of placing the CdTe substrate and a growth solution of Hg, Cd, and Te within a pressure and temperature controlled container, flowing an inert gas under pressure through the container to reduce the vaporization of Hg from the solution, establishing a cooling zone within the container to condense Hg vaporized from the solution, increasing the temperature of the solution for a time sufficient to react the Hg and Cd with the Te in the solution, reducing the temperature of the solution, establishing contact between the solution and the substrate, maintaining the solution at a temperature sufficient to melt the substrate for a time sufficient to eliminate a Hg vapor diffused layer, reducing the temperature of the solution to near the saturation temperature, and reducing the temperature of the solution at a rate sufficient to cause the solution to crystallize in an HgCdTe layer on the CdTe substrate.

Abstract: A semi-open method for growing an epitaxial layer on a substrate by increasing the pressure, refluxing the volatile components, contacting the substrate with the melt solution, and reducing the solution temperature.