Abstract: The present invention provides a method of transfer of a first planar substrate with two major surfaces to a second substrate, comprising the steps of forming the first planar substrate, attaching one of the major surfaces of the first planar substrate to a carrier by means of a release layer attaching the other major surface of the first substrate to the second substrate with a curable polymer adhesive layer partly curing the polymer adhesive layer, disconnecting the release layer from the first substrate to separate the first substrate from the carrier, followed by curing the polymer adhesive layer. The method may be used to form a stack of dies (4, 14 . . . ) which are adhered together by cured polymeric layers (7, 17). Each die (4, 14 . . . ) may include a device layer and an ultra-thin substrate manufactured and assembled by the method described above.

Abstract: The present invention provides a method of transfer of a first planar substrate with two major surfaces to a second substrate, comprising the steps of forming the first planar substrate, attaching one of the major surfaces of the first planar substrate to a carrier by means of a release layer attaching the other major surface of the first substrate to the second substrate with a curable polymer adhesive layer partly curing the polymer adhesive layer, disconnecting the release layer from the first substrate to separate the first substrate from the carrier, followed by curing the polymer adhesive layer.

Abstract: The invention provides a microwave module including a plurality of stacked elementary structures forming a unit, each elementary structure comprising a bottom dielectric layer on a top surface of which an integrated circuit (20, 21) is disposed, and a top dielectric layer covering the circuit (20, 21). The module is characterized by a connection line (20a, 30, 21a) between two respective circuits belonging to first and second elementary structures, the connection line being constituted by an input coplanar line (21a) disposed on the top surface of the bottom dielectric layer of the first structure, by an output coplanar line (20a) disposed on the top surface of the bottom dielectric layer of the second structure, and a by link coplanar line (30) connecting one end of the input coplanar line to one end of the output coplanar line.

Abstract: The invention concerns an MCM type high-density assembly of integrated circuits having a high reliability by virtue of its design and the means employed in its implementation. The essential feature of the assembly is the presence of one or more interconnection substrates in addition to at least one substrate carrying a plurality of unencapsulated electronic chips connected to the interconnection substrate(s) by conventional microwiring techniques, preferably through one or more apertures in the substrates. The interconnection substrate(s) is or are advantageously of the multilayer type. The assembly is adapted to be encapsulated thereafter in a hermetically sealed case in the manner that is standard for MCM.

Abstract: Apart from the base fingers (10), this transistor includes a titanium silicide coating, from which the base diffusions have been formed, and a silicon nitride coating (4). The edges of sandwiches made up of bands (3) and (4) are bordered by a silica bank (7) formed automatically by deposit and anisotropic attack, without additional masking. The emitter fingers (9) are overhung by a polycrystalline silicon layer (8) from which doping of these fingers has been obtained.The possibility is also obtained, automatically and without masks alignment, of having the emitter and base fingers brought firmly together with minimum protection distances.