Patents by Inventor Augustin Monroy

Augustin Monroy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low-noise vertical bipolar transistor and corresponding fabrication process
    Patent number: 6177717
    Abstract: The intrinsic collector of a vertical bipolar transitor is grown epitaxially on an extrinsic collector layer buried in a semiconductor substrate. A lateral isolation region surrounds the upper part of the intrinsic collector and an offset extrinsic collector well is produced. An SiGe heterojunction base lying above the intrinsic collector and above the lateral isolation region is produced by non-selective epitaxy. An in-situ doped emitter is produced by epitaxy on a predetermined window in the surface of the base which lies above the intrinsic collector so as to obtain, at least above the window, an emitter region formed from single-crystal silicon and directly in contact with the silicon of the base.
    Type: Grant
    Filed: June 1, 1999
    Date of Patent: January 23, 2001
    Assignee: STMicroelectronics, S.A.
    Inventors: Alain Chantre, Michel Marty, Didier Dutartre, Augustin Monroy, Michel Laurens, Francois Guette