Abstract: For producing phase-contrast images with a microscope which scans the object point-by-point with a beam of illuminating radiation, the illuminating radiation is focused by an objective (31, 32) including a phase-shifting element (33) of preselective geometry. A radiation-sensitive detector (36) is positioned directly behind the object plane (34), seen in the direction of the light; and the shape of the radiation-sensitive area of the detector is adapted to encompass the path of the radiation passing through the geometry of the phase-shifting element (33) of the objective (31, 32), e.g., where the phase-shifting elements (33) comprise an annular aperture, an appropriately conforming annular diaphragm (35) is arranged in front of the detector (36). The advantage of this arrangement is that it does not use any radiation-collecting lens system between the object plane (34) and the detector (36).

Abstract: A method used for the inspection of semiconductor structures under a light scan microscope which scans the surface of the wafer or other specimen (12) with a beam of light which is focused in spot form by the objective (18). In order to produce a dark-field image in which the linear semiconductor structures of the wafer are suppressed and only defects and particles of dirt are visible, the signals of four detectors (10a-10d) arranged outside the illuminating aperture of the objective within the channel of the dark-field ring condenser (6) are subjected to a logical "and" operation.