Abstract: Methods of fabricating infrared bandpass filters and infrared bandpass filters fabricated thereby. The methods include forming metallic and dielectric spacer layers on a mold that defines nanoscale-sized recesses or protuberances, depositing a stress-absorbing layer on the dielectric spacer layer opposite the mold, and applying a force to the stress-absorbing layer to peel a first intermediate structure comprising the metallic layer, the dielectric spacer layer, and the stress-absorbing layer from the mold. The stress-absorbing layer may be dissolved from the first intermediate structure with a solvent to define a second intermediate structure. The second intermediate structure may be transferred to a receiver substrate to define the IR bandpass filter. The recesses or protuberances of the metallic and dielectric spacer layers are configured to function as quasi-three-dimensional (quasi-3D) plasmonic metal-dielectric hybrid nanostructures.

Abstract: Methods of fabricating infrared bandpass filters and infrared bandpass filters fabricated thereby. The methods include forming metallic and dielectric spacer layers on a mold that defines nanoscale-sized recesses or protuberances, depositing a stress-absorbing layer on the dielectric spacer layer opposite the mold, and applying a force to the stress-absorbing layer to peel a first intermediate structure comprising the metallic layer, the dielectric spacer layer, and the stress-absorbing layer from the mold. The stress-absorbing layer may be dissolved from the first intermediate structure with a solvent to define a second intermediate structure. The second intermediate structure may be transferred to a receiver substrate to define the IR bandpass filter. The recesses or protuberances of the metallic and dielectric spacer layers are configured to function as quasi-three-dimensional (quasi-3D) plasmonic metal-dielectric hybrid nanostructures.

Abstract: Methods of fabricating infrared bandpass filters and infrared bandpass filters fabricated thereby. The methods include forming metallic and dielectric spacer layers on a mold that defines nanoscale-sized recesses or protuberances, depositing a stress-absorbing layer on the dielectric spacer layer opposite the mold, and applying a force to the stress-absorbing layer to peel a first intermediate structure comprising the metallic layer, the dielectric spacer layer, and the stress-absorbing layer from the mold. The stress-absorbing layer may be dissolved from the first intermediate structure with a solvent to define a second intermediate structure. The second intermediate structure may be transferred to a receiver substrate to define the IR bandpass filter. The recesses or protuberances of the metallic and dielectric spacer layers are configured to function as quasi-three-dimensional (quasi-3D) plasmonic metal-dielectric hybrid nanostructures.

Abstract: A photodetector focal plane array system having enhanced sensitivity and angle-of-view, including: a substrate including a plurality of photosensitive regions; and a microcomponent disposed adjacent to each of the plurality of photosensitive regions operable for receiving incident radiation from a relatively wider area and directing the incident radiation into a relatively smaller area of the associated photosensitive region by, in part, one or more of waveguiding and scattering; wherein each of the microcomponents is centered with respect to a photodetector mesa of each of the plurality of photosensitive regions. Each of the microcomponents includes one of a microcone, a microcuboid, a micropillar, a core-shell micropillar, a microtubule, a pyramid, an inverted pyramid, and an arbitrary shape microcomponent—with a top surface having a a selected or arbitrary cross-sectional shape and a selected or arbitrary profile.

Abstract: A photodetector focal plane array system having enhanced sensitivity and angle-of-view, including: a substrate including a plurality of photosensitive regions; and a microcomponent disposed adjacent to each of the plurality of photosensitive regions operable for receiving incident radiation from a relatively wider area and directing the incident radiation into a relatively smaller area of the associated photosensitive region by, in part, one or more of waveguiding and scattering; wherein each of the microcomponents is centered with respect to a photodetector mesa of each of the plurality of photosensitive regions. Each of the microcomponents includes one of a microcone, a microcuboid, a micropillar, a core-shell micropillar, a microtubule, a pyramid, an inverted pyramid, and an arbitrary shape microcomponent—with a top surface having a a selected or arbitrary cross-sectional shape and a selected or arbitrary profile.

Abstract: A photodetector focal plane array system, comprising: a substrate comprising a plurality of photosensitive regions; and a microcomponent disposed adjacent to each of the plurality of photosensitive regions operable for receiving incident radiation and directing a photonic nanojet into the associated photosensitive region. Optionally, each of the microcomponents comprises one of a microsphere and a microcylinder. Each of the microcomponents has a diameter of between ˜? and ˜100?, where ? is the wavelength of the incident radiation. Each of the microcomponents is manufactured from a dielectric or semiconductor material. Each of the microcomponents has an index of refraction of between ˜1.4 and ˜3.5. Optionally, high-index components can be embedded in a lower index material. The microcomponents form an array of microcomponents disposed adjacent to the substrate.

Abstract: A photodetector focal plane array system, comprising: a substrate comprising a plurality of photosensitive regions; and a microcomponent disposed adjacent to each of the plurality of photosensitive regions operable for receiving incident radiation and directing a photonic nanojet into the associated photosensitive region. Optionally, each of the microcomponents comprises one of a microsphere and a microcylinder. Each of the microcomponents has a diameter of between between ˜? and ˜100?, where ? is the wavelength of the incident radiation. Each of the microcomponents is manufactured from a dielectric or semiconductor material. Each of the microcomponents has an index of refraction of between ˜1.4 and ˜3.5. Optionally, high-index components can be embedded in a lower index material. The microcomponents form an array of microcomponents disposed adjacent to the substrate.