Abstract: The present disclosure relates to a method of manufacturing a thin film device. A multilevel nanoimprint lithography template is transferred into a thin film stack comprising an electrode layer and a blanket sacrificial layer covering the electrode layer. The template is transferred, thereby patterning the device and exposing a predefined insulating area of the electrode while keeping a remaining portion of the sacrificial layer that covers a pre-defined electrical contact area of the electrode. An area selective atomic layer deposition (ALD) process is performed to selectively cover the exposed area of the electrode layer with a cover layer. After removing the remaining portion of the sacrificial layer the electrical contact area of the electrode layer is exposed for further processing.

Abstract: An X-ray imaging device with an X-ray conversion area on a flexible circuit such as a Thin Film Transistor circuit with an array of detector cells is manufactured in a method comprising the steps of — providing a flexible carrier layer on a substrate plate, with a first surface of the flexible carrier layer attached to the substrate plate and a second surface of the flexible carrier layer exposed, whereby the substrate plate hinders the flexible carrier layer from bending; — creating an array of detector cells on a part of the second surface; — mounting a peripheral circuit on the second surface outside said part, interconnected to the array of detector cells; — attaching a further layer to the second surface, after or before mounting the peripheral circuit, the further layer comprising an X-ray conversion area at least over the array of detector cells, the further layer being attached to the flexible carrier layer beyond a first edge of the array of detector cells, and beyond the peripheral circuit, the furt

Abstract: A photodetector array (1) is provided comprising a plurality of pixels (10ij) between a supply line (4j) and a common electrode (2). Respective pixels (10ij) comprise a photon radiation sensitive element (11ij) arranged in a series connection with a switching element (20ij) characterized in that the series connection further includes a resistive element (30ij).

Abstract: A photodetector array (1) is provided comprising a plurality of pixels (10ij) between a supply line (4j) and a common electrode (2). Respective pixels (10ij) comprise a photon radiation sensitive element (11ij) arranged in a series connection with a switching element (20ij) characterized in that the series connection further includes a resistive element (30ij).