Abstract: An apparatus comprises: a focused ion beam (FIB) column within a vacuum chamber configured to direct ions comprising a mixture of protons and non-hydrogen ions onto a sample, wherein the kinetic energy of ions of the mixture is not greater than 50 kilo-electron-Volts (keV); and an X-ray detector configured to detect and measure X-rays that are emitted from the sample in response to the impingement of the protons and non-hydrogen ions onto the sample. The apparatus may further comprise an electron microscope column within the vacuum chamber configured to direct and focus a beam of electrons onto the sample and to detect secondary electrons or backscattered electrons that are emitted from the sample in response to the impingement of the beam of electrons onto the sample. The electron microscope may generate an image of a sample area that is milled by the FIB column.

Abstract: A test piece configured for the implementation of a method for evaluating an assembly by welding of parts made of thermoplastic materials, wherein the test piece includes at least two parts based on thermoplastic materials having surfaces to be welded that are at least partially placed opposite one another and respective free surfaces, wherein at least one of the parts is a perforated reference part including at least one perforation.

Abstract: The present invention relates to a method for evaluating an assembly by welding of parts made of thermoplastic materials, to a test piece and its associated uses, to an installation for implementing this method and to the associated welding system.

Abstract: Practical implementation of Particle-Induced X-ray Emission (PIXE) on a focused ion beam apparatus or on a dual-beam apparatus comprising both focused-ion beam and scanning microscopy capabilities is described. Accordingly, an analytical method comprises: directing and focusing a beam of ions comprising a mixture of protons and non-hydrogen ions onto a sample, wherein the kinetic energy of ions of the mixture is not greater than 50 kilo-electron-Volts (keV); and detecting and measuring X-rays that are emitted from the sample in response to the impingement of the protons and non-hydrogen ions onto the sample.

Abstract: Methods include arranging a substrate in a vacuum chamber of a charged particle beam microscope, wherein the substrate is held at a cryogenic temperature, and depositing on the substrate at the cryogenic temperature a condensate precursor that is stored in a crucible, wherein the deposited condensate precursor forms a deposition layer on the substrate. An apparatus include a vacuum chamber configured to support a substrate, a condensate precursor system coupled to the vacuum chamber, wherein a vacuum pump is configured to draw a vacuum on a storage reservoir to reduce a vapor pressure build-up of a one or more volatile contaminants in the storage reservoir and thereby reduce a deposition of the one or more contaminants on the substrate during the condensing of the condensate precursor on the substrate. A condensate precursor can comprise a transition metal center comprising hafnium or osmium. Related deposition and cap layers are disclosed.

Abstract: Method and system for sample preparation includes positioning an extraneous specimen close to a target specimen in a vacuum chamber, directing a charged particle beam towards the extraneous specimen while flowing a precursor gas in the vacuum chamber, and depositing or etching on one or more surfaces of the target specimen with the assist of the precursor gas.

Abstract: Practical implementation of Particle-Induced X-ray Emission (PIXE) on a focused ion beam apparatus or on a dual-beam apparatus comprising both focused-ion beam and scanning microscopy capabilities is described. Accordingly, an analytical method comprises: directing and focusing a beam of ions comprising a mixture of protons and non-hydrogen ions onto a sample, wherein the kinetic energy of ions of the mixture is not greater than 50 kilo-electron-Volts (keV); and detecting and measuring X-rays that are emitted from the sample in response to the impingement of the protons and non-hydrogen ions onto the sample.

Abstract: A method for welding at least two parts including a thermoplastic material and having respective surfaces to be welded, including: inserting an insert between the surfaces to be welded of the two parts; generating heat via the insert; wherein the insert moves in relation to the parts to be welded in a welding direction. Also, an installation adapted for implementation of the method.

Abstract: A method for welding at least two parts including a thermoplastic material and having respective surfaces to be welded, including: inserting an insert between the surfaces to be welded of the two parts; generating heat via the insert; wherein the insert moves in relation to the parts to be welded in a welding direction. Also, an installation adapted for implementation of this method.

Abstract: The present invention relates to a method for evaluating an assembly by welding of parts made of thermoplastic materials, to a test piece and its associated uses, to an installation for implementing this method and to the associated welding system.

Abstract: The invention first relates to a method for welding at least two parts comprising a thermoplastic material and having respective surfaces to be welded, comprising: inserting an insert between the surfaces to be welded of the two parts; generating heat via said insert; wherein the insert moves in relation to the parts to be welded in a welding direction. The invention also relates to an installation adapted for implementation of this method.

Abstract: Methods and apparatuses disclosed herein for large-area 3D analysis of samples using glancing incidence FIB milling. An example method at least includes milling, with a focused ion beam, a sample at a shallow angle and at a plurality of rotational orientations to remove a layer of the sample and to expose a surface, and after milling, imaging, with a charged particle beam, the exposed surface of the sample.

Abstract: A method and system are disclosed for observing and aligning a beam of light in the sample chamber of a charged particle beam (CPB) system, such as an electron microscope or focused ion beam system. The method comprises providing an imaging aid inside the sample chamber with a calibration surface configured such that when illuminated by light, and simultaneously illuminated by a CPB, the intensity of the secondary radiation induced by the CPB is different in regions also illuminated by light relative to regions with lower light illumination levels, thereby providing an image of the light beam on the calibration surface. The image of the light beam may be used to align the light beam to the charged particle beam.

Abstract: In various embodiments, image sensors and methods of operating the image sensors are disclosed. In an example embodiment, a pixel circuit having a first electrode is coupled to a reset transistor and to a first region of an optically sensitive layer, and a second electrode is coupled to a pixel sense node and to a second region of an optically sensitive layer. The electrical path from the first electrode, through the optically sensitive layer, and into the second electrode functions as a variable resistor. Other devices and methods of operating the devices are disclosed.

Abstract: In various embodiments, methods and related apparatuses for sealing down pixel sizes in quantum film-based image sensors are disclosed. In one embodiment, an image sensor circuit is disclosed that includes circuit includes an optically sensitive layer, a first pixel having a first electrode coupled to a first region of optically sensitive layer, a second pixel having a second electrode coupled to a second region of optically sensitive layer, and a readout circuit having at least one transistor that is shared among the first pixel and the second pixel. In a first time interval, the transistor is used in a readout of a signal related to illumination of the first pixel over an integration period. During a second time interval, the transistor is used in a readout of a signal related to illumination of the second pixel over an integration pixel. The signals thusly read constitute a time-domain multiplexed (TDM) signal.

Abstract: A method for planning a beam path for material deposition is provided in which a structure pattern having features of varying size is analyzed to determine the size of each feature. A beam path throughout the structure pattern is determined and the beam current required for each point in the structure pattern is configured. Configuring the beam current required for each point involves determining the acceptable beam dose for that point. Relatively small features require a low beam current for high accuracy and relatively large features can be formed using a higher beam current allowing faster deposition. Each feature in the structure pattern is deposited at the highest beam current acceptable to allow accurate deposition of the feature.

Abstract: A collision ionization source is disclosed herein. An example source includes an ionization region arranged to receive a gas and a charged particle beam, the charged particle beam to ionize at least some of the gas, and a supply duct arranged to provide the gas to the ionization region, the supply duct having a non-uniform height decreasing from an input orifice to an output orifice, the output orifice arranged adjacent to the ionization region.

Abstract: In various embodiments, image sensors and methods of operating the image sensors are disclosed. In an example embodiment, a pixel circuit having a first electrode is coupled to a reset transistor and to a first region of an optically sensitive layer, and a second electrode is coupled to a pixel sense node and to a second region of an optically sensitive layer. The electrical path from the first electrode, through the optically sensitive layer, and into the second electrode functions as a variable resistor. Other devices and methods of operating the devices are disclosed.

Abstract: A method and system are disclosed for observing and aligning a beam of light in the sample chamber of a charged particle beam (CPB) system, such as an electron microscope or focused ion beam system. The method comprises providing an imaging aid inside the sample chamber with a calibration surface configured such that when illuminated by light, and simultaneously illuminated by a CPB, the intensity of the secondary radiation induced by the CPB is different in regions also illuminated by light relative to regions with lower light illumination levels, thereby providing an image of the light beam on the calibration surface. The image of the light beam may be used to align the light beam to the charged particle beam.

Abstract: In various embodiments, methods and related apparatuses for sealing down pixel sizes in quantum film-based image sensors are disclosed. In one embodiment, an image sensor circuit is disclosed that includes circuit includes an optically sensitive layer, a first pixel having a first electrode coupled to a first region of optically sensitive layer, a second pixel having a second electrode coupled to a second region of optically sensitive layer, and a readout circuit having at least one transistor that is shared among the first pixel and the second pixel. In a first time interval, the transistor is used in a readout of a signal related to illumination of the first pixel over an integration period. During a second time interval, the transistor is used in a readout of a signal related to illumination of the second pixel over an integration pixel. The signals thusly read constitute a time-domain multiplexed (TDM) signal.