Patents by Inventor Aurélien Philippe Jean Maclou Botman
Aurélien Philippe Jean Maclou Botman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240071720Abstract: Method and system for sample preparation includes positioning an extraneous specimen close to a target specimen in a vacuum chamber, directing a charged particle beam towards the extraneous specimen while flowing a precursor gas in the vacuum chamber, and depositing or etching on one or more surfaces of the target specimen with the assist of the precursor gas.Type: ApplicationFiled: August 11, 2023Publication date: February 29, 2024Applicant: FEI CompanyInventors: Jamie Dee Gravell, Brian Roberts Routh, Aurelien Philippe Jean Maclou Botman, Subhei Shaar
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Publication number: 20230341341Abstract: Practical implementation of Particle-Induced X-ray Emission (PIXE) on a focused ion beam apparatus or on a dual-beam apparatus comprising both focused-ion beam and scanning microscopy capabilities is described. Accordingly, an analytical method comprises: directing and focusing a beam of ions comprising a mixture of protons and non-hydrogen ions onto a sample, wherein the kinetic energy of ions of the mixture is not greater than 50 kilo-electron-Volts (keV); and detecting and measuring X-rays that are emitted from the sample in response to the impingement of the protons and non-hydrogen ions onto the sample.Type: ApplicationFiled: April 25, 2022Publication date: October 26, 2023Applicant: FEI COMPANYInventors: Daniel TOTONJIAN, Aurelien Philippe Jean Maclou BOTMAN, Milos TOTH
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Publication number: 20210118646Abstract: Methods and apparatuses disclosed herein for large-area 3D analysis of samples using glancing incidence FIB milling. An example method at least includes milling, with a focused ion beam, a sample at a shallow angle and at a plurality of rotational orientations to remove a layer of the sample and to expose a surface, and after milling, imaging, with a charged particle beam, the exposed surface of the sample.Type: ApplicationFiled: October 19, 2020Publication date: April 22, 2021Applicant: FEI CompanyInventors: Chad Rue, Jing Wang, Aurelien Philippe Jean Maclou Botman, Joe Christian, Kenny Mani, Gabriella Kiss
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Patent number: 10777383Abstract: A method and system are disclosed for observing and aligning a beam of light in the sample chamber of a charged particle beam (CPB) system, such as an electron microscope or focused ion beam system. The method comprises providing an imaging aid inside the sample chamber with a calibration surface configured such that when illuminated by light, and simultaneously illuminated by a CPB, the intensity of the secondary radiation induced by the CPB is different in regions also illuminated by light relative to regions with lower light illumination levels, thereby providing an image of the light beam on the calibration surface. The image of the light beam may be used to align the light beam to the charged particle beam.Type: GrantFiled: July 6, 2018Date of Patent: September 15, 2020Assignee: FEI CompanyInventors: Cameron James Zachreson, Dolf Timmerman, Milos Toth, Jorge Filevich, Steven Randolph, Aurelien Philippe Jean Maclou Botman
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Patent number: 10415133Abstract: A method for planning a beam path for material deposition is provided in which a structure pattern having features of varying size is analyzed to determine the size of each feature. A beam path throughout the structure pattern is determined and the beam current required for each point in the structure pattern is configured. Configuring the beam current required for each point involves determining the acceptable beam dose for that point. Relatively small features require a low beam current for high accuracy and relatively large features can be formed using a higher beam current allowing faster deposition. Each feature in the structure pattern is deposited at the highest beam current acceptable to allow accurate deposition of the feature.Type: GrantFiled: June 30, 2016Date of Patent: September 17, 2019Assignee: FEI CompanyInventor: Aurelien Philippe Jean Maclou Botman
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Patent number: 10325750Abstract: A collision ionization source is disclosed herein. An example source includes an ionization region arranged to receive a gas and a charged particle beam, the charged particle beam to ionize at least some of the gas, and a supply duct arranged to provide the gas to the ionization region, the supply duct having a non-uniform height decreasing from an input orifice to an output orifice, the output orifice arranged adjacent to the ionization region.Type: GrantFiled: January 18, 2018Date of Patent: June 18, 2019Assignee: FEI COMPANYInventors: Gregory A. Schwind, Aurelien Philippe Jean Maclou Botman, Sean Kellogg, Leon van Kouwen, Luigi Mele
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Publication number: 20190013178Abstract: A method and system are disclosed for observing and aligning a beam of light in the sample chamber of a charged particle beam (CPB) system, such as an electron microscope or focused ion beam system. The method comprises providing an imaging aid inside the sample chamber with a calibration surface configured such that when illuminated by light, and simultaneously illuminated by a CPB, the intensity of the secondary radiation induced by the CPB is different in regions also illuminated by light relative to regions with lower light illumination levels, thereby providing an image of the light beam on the calibration surface. The image of the light beam may be used to align the light beam to the charged particle beam.Type: ApplicationFiled: July 6, 2018Publication date: January 10, 2019Applicant: FEI CompanyInventors: Cameron James Zachreson, Dolf Timmerman, Milos Toth, Jorge Filevich, Steven Randolph, Aurelien Philippe Jean Maclou Botman
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Patent number: 10105734Abstract: A method of modifying a sample surface layer in the vacuum chamber of a particle-optical apparatus, the method performed in vacuum, the method comprising: Providing the microscopic sample attached to a manipulator, Providing a first liquid at a first (controlled) temperature, Dipping the sample in the first liquid, thereby causing a sample surface modification, Removing the sample from the first liquid, Providing a second liquid at a second (controlled) temperature, Dipping the sample in the second liquid, and Removing the sample from the second liquid. This enables the wet processing of a sample in-situ, thereby enhancing speed and/or avoiding subsequent alteration/contamination of the sample, such as oxidation, etc. The method is particularly useful for etching a lamella after machining the lamella with a (gallium) FIB to remove the surface layer where gallium implantation occurred, or where the crystal lattice is disturbed.Type: GrantFiled: January 11, 2016Date of Patent: October 23, 2018Assignee: FEI COMPANYInventors: Tomas Vystavel, Aurelien Philippe Jean Maclou Botman
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Publication number: 20180211807Abstract: A collision ionization source is disclosed herein. An example source includes an ionization region arranged to receive a gas and a charged particle beam, the charged particle beam to ionize at least some of the gas, and a supply duct arranged to provide the gas to the ionization region, the supply duct having a non-uniform height decreasing from an input orifice to an output orifice, the output orifice arranged adjacent to the ionization region.Type: ApplicationFiled: January 18, 2018Publication date: July 26, 2018Applicant: FEI CompanyInventors: Gregory A. Schwind, Aurelien Philippe Jean Maclou Botman, Sean Kellogg, Leon van Kouwen, Luigi Mele
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Patent number: 9951417Abstract: Material is deposited in a desired pattern by spontaneous deposition of precursor gas at regions of a surface that are prepared using a beam to provide conditions to support the initiation of the spontaneous reaction. Once the reaction is initiated, it continues in the absence of the beam at the regions of the surface at which the reaction was initiated.Type: GrantFiled: October 6, 2014Date of Patent: April 24, 2018Assignee: FEI CompanyInventors: Aurélien Philippe Jean Maclou Botman, Steven Randolph, Milos Toth
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Patent number: 9899181Abstract: A collision ionization ion source comprising: A pair of stacked plates, sandwiched about an intervening gap; An input zone (aperture), provided in a first of said plates, to admit an input beam of charged particles to said gap; An output zone (aperture), located opposite said input zone and provided in the second of said plates, to allow emission of a flux of ions from said gap; A gas space, between said input and output zones, in which gas can be ionized by said input beam so as to produce said ions; A supply duct in said gap, for supplying a flow of said gas to said gas space, and comprising: An emergence orifice, opening into said gas space; An entrance orifice, connectable to a gas supply, wherein said duct comprises at least one transition region between said entrance orifice and said emergence orifice in which an inner height of said duct, measured normal to the plates, decreases from a first height value to a second height value.Type: GrantFiled: January 12, 2017Date of Patent: February 20, 2018Assignee: FEI CompanyInventors: Gregory A. Schwind, Aurelien Philippe Jean Maclou Botman, Sean Kellogg, Leon van Kouwen, Luigi Mele
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Patent number: 9812286Abstract: A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.Type: GrantFiled: December 22, 2015Date of Patent: November 7, 2017Assignee: FEI CompanyInventors: David H. Narum, Milos Toth, Steven Randolph, Aurelien Philippe Jean Maclou Botman
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Publication number: 20170002467Abstract: An improved process control for a charged beam system is provided that allows the capability of accurately producing complex two and three dimensional structures from a computer generated model in a material deposition process. The process control actively monitors the material deposition process and makes corrective adjustments as necessary to produce a pattern or structure that is within an acceptable tolerance range with little or no user intervention. The process control includes a data base containing information directed to properties of a specific pattern or structure and uses an algorithm to instruct the beam system during the material deposition process. Feedback through various means such as image recognition, chamber pressure readings, and EDS signal can be used to instruct the system to make automatic system modifications, such as, beam and gas parameters, or other modifications to the pattern during a material deposition run.Type: ApplicationFiled: July 4, 2016Publication date: January 5, 2017Applicant: FEI CompanyInventors: Marcus Straw, Chad Rue, Steven Randolph, Aurelien Philippe Jean Maclou Botman, Clive D. Chandler, Mark W. Utlaut
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Publication number: 20170002455Abstract: A method for planning a beam path for material deposition is provided in which a structure pattern having features of varying size is analyzed to determine the size of each feature. A beam path throughout the structure pattern is determined and the beam current required for each point in the structure pattern is configured. Configuring the beam current required for each point involves determining the acceptable beam dose for that point. Relatively small features require a low beam current for high accuracy and relatively large features can be formed using a higher beam current allowing faster deposition. Each feature in the structure pattern is deposited at the highest beam current acceptable to allow accurate deposition of the feature.Type: ApplicationFiled: June 30, 2016Publication date: January 5, 2017Applicant: FEI CompanyInventor: Aurelien Philippe Jean Maclou Botman
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Patent number: 9478390Abstract: A method and apparatus for directing light or gas or both to a specimen positioned within about 2 mm from the lower end of a charged particle beam column. The charged particle beam column assembly includes a platform defining a specimen holding position and has a set of electrostatic lenses each including a set of electrodes. The assembly includes a final electrostatic lens that includes a final electrode that is closest to the specimen holding position. This final electrode defines at least one internal passageway having a terminus that is proximal to and directed toward the specimen holding position.Type: GrantFiled: June 30, 2014Date of Patent: October 25, 2016Assignee: FEI COMPANYInventors: N. William Parker, Marcus Straw, Jorge Filevich, Aurelien Philippe Jean Maclou Botman, Steven Randolph, Clive Chandler, Mark Utlaut
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Publication number: 20160199878Abstract: A method of modifying a sample surface layer in the vacuum chamber of a particle-optical apparatus, the method performed in vacuum, the method comprising: Providing the microscopic sample attached to a manipulator, Providing a first liquid at a first (controlled) temperature, Dipping the sample in the first liquid, thereby causing a sample surface modification, Removing the sample from the first liquid, Providing a second liquid at a second (controlled) temperature, Dipping the sample in the second liquid, and Removing the sample from the second liquid. This enables the wet processing of a sample in-situ, thereby enhancing speed and/or avoiding subsequent alteration/contamination of the sample, such as oxidation, etc. The method is particularly useful for etching a lamella after machining the lamella with a (gallium) FIB to remove the surface layer where gallium implantation occurred, or where the crystal lattice is disturbed.Type: ApplicationFiled: January 11, 2016Publication date: July 14, 2016Applicant: FEI CompanyInventors: Tomas Vystavel, Aurelien Philippe Jean Maclou Botman
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Publication number: 20160189920Abstract: A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.Type: ApplicationFiled: December 22, 2015Publication date: June 30, 2016Applicant: FEI CompanyInventors: David H. Narum, Milos Toth, Steven Randolph, Aurelien Philippe Jean Maclou Botman
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Patent number: 9269530Abstract: Vapor is provided locally at a sample surface to allow fluorescence of the fluorescent markers in a vacuum chamber. For example, a nanocapillary can dispense a liquid near a region of interest, the liquid evaporating to increase the vapor pressure near the fluorescent markers. The increase in vapor pressure at the fluorescent marker is preferably sufficiently great to prevent deactivation or to reactivate the fluorescent marker, while the overall pressure in the vacuum chamber is preferably sufficiently low to permit charged particle beam operation with little or no additional evacuation pumping.Type: GrantFiled: September 25, 2014Date of Patent: February 23, 2016Assignee: FEI CompanyInventors: Aurélien Philippe Jean Maclou Botman, Cameron James Zachreson
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Patent number: 9255339Abstract: A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or microelectromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.Type: GrantFiled: September 19, 2011Date of Patent: February 9, 2016Assignee: FEI CompanyInventors: Aurelien Philippe Jean Maclou Botman, Milos Toth, Steven Randolph, David H. Narum
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Publication number: 20150380205Abstract: A method and apparatus for directing light or gas or both to a specimen positioned within about 2 mm from the lower end of a charged particle beam column The charged particle beam column assembly includes a platform defining a specimen holding position and has a set of electrostatic lenses each including a set of electrodes. The assembly includes a final electrostatic lens that includes a final electrode that is closest to the specimen holding position. This final electrode defines at least one internal passageway having a terminus that is proximal to and directed toward the specimen holding position.Type: ApplicationFiled: June 30, 2014Publication date: December 31, 2015Applicant: FEI CompanyInventors: N. William Parker, Mark Straw, Jorge Filevich, Aurelien Philippe Jean Maclou Botman, Steven Randolph, Clive Chandler, Mark Utlaut