Patents by Inventor Aurélien SUHM

Aurélien SUHM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220149245
    Abstract: A method for coating chips resting, by a rear face opposite to a front face, on a main face of a support substrate, and separated from each other by an inter-chip space, includes a step of forming a photosensitive coating film covering the front faces and the inter-chip spaces. The method further includes a first photolithographic sequence which comprises an insolation sub-step, and a dissolution sub-step. The sequence leads to a partial removal of the photosensitive coating film so as to maintain the film exclusively at the inter-chip spaces and, advantageously recessed relative to the front faces.
    Type: Application
    Filed: March 2, 2020
    Publication date: May 12, 2022
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Aurélien SUHM, Maxime ARGOUD
  • Publication number: 20210149091
    Abstract: The invention relates to a diffuser 3 intended to be facing a light source 1 comprising a transmission layer 10 and a diffusion layer 22, 23 intended to diffuse a light transmitted by the light source, the diffuser being characterised in that the diffusion layer comprises a plurality of metal structures 200, 200a, 200b, called metal nanostructures, having dimensions less than a wavelength of the light transmitted, said metal nanostructures having varied sizes and being distributed within the diffusion layer such that adjacent metal nanostructures have between them, varied distances and preferably less than the wavelength of the light transmitted. The invention also relates to a method for manufacturing such a diffuser, and a display system comprising such a diffuser.
    Type: Application
    Filed: September 25, 2020
    Publication date: May 20, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Salim BOUTAMI, Bernard AVENTURIER, Stéphane GETIN, Aurélien SUHM, Pierre JOLY
  • Publication number: 20200135968
    Abstract: A light emitting bipolar transistor, comprising at least: first, second and third portions of doped semiconductor, forming a collector, a base and an emitter respectively of the light emitting bipolar transistor; at least one quantum well arranged in the first portion and between two first barrier layers formed by the doped semiconductor of the first portion; and in which the levels of the energy bands of the doped semiconductor of the first portion are higher than those of a semiconductor forming the quantum well which is configured to produce the light emission of the bipolar transistor.
    Type: Application
    Filed: October 30, 2019
    Publication date: April 30, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Anis Daami, Alexandre Ferron, Aurelien Suhm
  • Patent number: 9673269
    Abstract: An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.
    Type: Grant
    Filed: September 4, 2011
    Date of Patent: June 6, 2017
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Emmanuel Defay, Gwenaël Le Rhun, Aurélien Suhm
  • Publication number: 20120056299
    Abstract: An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.
    Type: Application
    Filed: September 4, 2011
    Publication date: March 8, 2012
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Emmanuel DEFAY, Gwenaël LE RHUN, Aurélien SUHM