Abstract: This disclosure describes systems and methods for making at least a portion of a photovoltaic device. This may include a method of manufacturing, an optimization procedure and an apparatus for the PECVD (plasma enhanced chemical vapor deposition) of thin films over large area substrates. In particular, the system may be used to deposit thin film silicon material for photovoltaic (PV) applications. The photovoltaic device may be achieved by a combination of plasma chamber design (e.g., inter-electrode separation) and plasma process parameters (e.g., pressure, applied RF voltage, etc.) to optimize the doped and/or intrinsic layers of the solar cell (e.g., p-i-n junction).

Abstract: This disclosure relates to plasma processing for photovoltaic device manufacturing. Particularly to a plasma processing system that includes an electrode that allows gas to pass through into the process chamber that includes a substrate. A gas barrier component may be used to minimize parasitic plasma occurring at the edges of the electrode by preventing process gas reaching the edge of the chamber or from entering the process chamber by going around the electrode. The gas barrier component may be made of a non-conductive flexible material that forms a fluidic seal between the electrode and the chamber. In other embodiments, the gas barrier may also support isolation grids that are disposed opposite of the electrode and prevent the isolation grids from moving.

Abstract: A plasma reactor with a recipient (33) and an electrode (38) has two exhaust openings (34, 35) spaced apart in a close proximity to the electrode (38). A flow diverter body (37) in the space of the reactor (33) between the periphery (313) of the electrode (3a) and the exhaust openings (35, 34) diverts the exhaust effect of the exhaust openings (35, 34) to avoid combined exhausting effect to become effective in the reactor space adjacent to the addressed periphery (313).