Patents by Inventor Aurelie Bajolet

Aurelie Bajolet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride
    Patent number: 10211059
    Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.
    Type: Grant
    Filed: May 22, 2017
    Date of Patent: February 19, 2019
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA
    Inventors: Pierre Caubet, Florian Domengie, Carlos Augusto Suarez Segovia, Aurelie Bajolet, Onintza Ros Bengoechea
  • PROCESS FOR FORMING A LAYER OF EQUIAXED TITANIUM NITRIDE AND A MOSFET DEVICE HAVING A METAL GATE ELECTRODE INCLUDING A LAYER OF EQUIAXED TITANIUM NITRIDE
    Publication number: 20170256625
    Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.
    Type: Application
    Filed: May 22, 2017
    Publication date: September 7, 2017
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA
    Inventors: Pierre Caubet, Florian Domengie, Carlos Augusto Suarez Segovia, Aurelie Bajolet, Onintza Ros Bengoechea
  • Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride
    Patent number: 9691871
    Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: June 27, 2017
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA
    Inventors: Pierre Caubet, Florian Domengie, Carlos Augusto Suarez Segovia, Aurelie Bajolet, Onintza Ros Bengoechea
  • PROCESS FOR FORMING A LAYER OF EQUIAXED TITANIUM NITRIDE AND A MOSFET DEVICE HAVING A METAL GATE ELECTRODE INCLUDING A LAYER OF EQUIAXED TITANIUM NITRIDE
    Publication number: 20170179250
    Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.
    Type: Application
    Filed: December 18, 2015
    Publication date: June 22, 2017
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA
    Inventors: Pierre Caubet, Florian Domengie, Carlos Augusto Suarez Segovia, Aurelie Bajolet, Onintza Ros Bengoechea