Patents by Inventor Aurelie Humbert
Aurelie Humbert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240112944Abstract: The present disclosure relates to a temporary wafer bonding process including the steps of: providing a wafer for back processing by laminating a plain protective film on a front surface of the wafer; providing a rigid carrier; bonding the rigid carrier to the plain protective film by the intermediate of a bonding material layer; processing a back surface of the wafer; and separating the rigid carrier and the plain protective film from the wafer.Type: ApplicationFiled: September 26, 2023Publication date: April 4, 2024Inventors: Jakob Visker, Lan Peng, Serge Vanhaelemeersch, Aurelie Humbert, Chi Dang Thi Thuy, Evert Visker
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Patent number: 11944965Abstract: A microfluidic device, a diagnostic device including the microfluidic device and a method for making the microfluidic device are provided. The microfluidic device includes: (i) a transparent substrate comprising a cavity, the cavity opening up to a top of the transparent substrate; (ii) a transparent layer covering the cavity, and (iii) a semiconductor substrate over the transparent layer and the transparent substrate, wherein the semiconductor substrate comprises a through hole overlaying the cavity and exposing the transparent layer.Type: GrantFiled: May 21, 2020Date of Patent: April 2, 2024Assignee: Imec vzwInventors: Giuseppe Fiorentino, Simone Severi, Aurelie Humbert
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Patent number: 11676851Abstract: According to an aspect of the present inventive concept there is provided a method for manufacturing a fluid sensor device comprising: bonding a silicon-on-insulator arrangement comprising a silicon wafer, a buried oxide, a silicon layer, and a first dielectric layer, to a CMOS arrangement comprising a metallization layer and a planarized dielectric layer, wherein the bonding is performed via the first dielectric layer and the planarized dielectric layer; forming a fin-FET arrangement in the silicon layer, wherein the fin-FET arrangement is configured to function as a fluid sensitive fin-FET arrangement; removing the buried oxide and the silicon wafer; forming a contact to the metallization layer and the fin-FET arrangement, wherein the contact comprises an interconnecting structure configured to interconnect the metallization layer and the fin-FET arrangement; forming a channel comprising an inlet and an outlet, wherein the channel is configured to allow a fluid comprising an analyte to contact the fin-FET aType: GrantFiled: December 19, 2018Date of Patent: June 13, 2023Assignee: IMEC VZWInventors: Aurelie Humbert, Simone Severi
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Publication number: 20210300752Abstract: A method for fabricating a microfluidic device includes providing an assembly that includes a first silicon substrate having a hydrophilic silicon oxide top surface that includes a microfluidic channel and a second silicon substrate having a hydrophilic silicon oxide bottom surface directly bonded on the top surface of the first silicon substrate, the second silicon substrate including fluidic access holes giving fluidic access to the microfluidic channel. The method also includes exposing the assembly to oxidative species including one or more oxygen atoms and to heat so as to form silicon oxide at a surface of the access holes and of the microfluidic channel.Type: ApplicationFiled: March 16, 2021Publication date: September 30, 2021Inventors: Giuseppe Fiorentino, Aurelie Humbert, Simone Severi, Benjamin Jones
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Publication number: 20200406255Abstract: A microfluidic device, a diagnostic device including the microfluidic device and a method for making the microfluidic device are provided. The microfluidic device includes: (i) a transparent substrate comprising a cavity, the cavity opening up to a top of the transparent substrate; (ii) a transparent layer covering the cavity, and (iii) a semiconductor substrate over the transparent layer and the transparent substrate, wherein the semiconductor substrate comprises a through hole overlaying the cavity and exposing the transparent layer.Type: ApplicationFiled: May 21, 2020Publication date: December 31, 2020Inventors: Giuseppe Fiorentino, Simone Severi, Aurelie Humbert
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Publication number: 20200350200Abstract: According to an aspect of the present inventive concept there is provided a method for manufacturing a fluid sensor device comprising: bonding a silicon-on-insulator arrangement comprising a silicon wafer, a buried oxide, a silicon layer, and a first dielectric layer, to a CMOS arrangement comprising a metallization layer and a planarized dielectric layer, wherein the bonding is performed via the first dielectric layer and the planarized dielectric layer; forming a fin-FET arrangement in the silicon layer, wherein the fin-FET arrangement is configured to function as a fluid sensitive fin-FET arrangement; removing the buried oxide and the silicon wafer; forming a contact to the metallization layer and the fin-FET arrangement, wherein the contact comprises an interconnecting structure configured to interconnect the metallization layer and the fin-FET arrangement; forming a channel comprising an inlet and an outlet, wherein the channel is configured to allow a fluid comprising an analyte to contact the fin-FET aType: ApplicationFiled: December 19, 2018Publication date: November 5, 2020Inventors: Aurelie HUMBERT, Simone SEVERI
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Patent number: 10197520Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24, 26, 28) covering the metallization stack; a gas sensor including a sensing material portion (32, 74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.Type: GrantFiled: July 24, 2012Date of Patent: February 5, 2019Assignee: ams International AGInventors: Matthias Merz, Aurelie Humbert, Roel Daamen, David Tio Castro
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Patent number: 9865647Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a thermal conductivity based gas sensor having an electrically resistive sensor element located on the major surface for exposure to a gas to be sensed. The integrated circuit further includes a barrier located on the major surface for inhibiting a flow of the gas across the sensor element.Type: GrantFiled: February 11, 2016Date of Patent: January 9, 2018Assignee: AMS INTERNATIONAL AGInventors: Aurelie Humbert, Roel Daamen, Viet Nguyen Hoang
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Patent number: 9818905Abstract: Disclosed is an integrated circuit comprising a substrate (10); and an optical CO2 sensor comprising: first and second light sensors (12, 12?) on said substrate, said second light sensor being spatially separated from the first light sensor; and a layer portion (14) including an organic compound comprising at least one amine or amidine functional group over the first light sensor; wherein said integrated circuit further comprises a signal processor (16) coupled to the first and second light sensor for determining a difference in the respective outputs of the first and second light sensor. An electronic device comprising such a sensor and a method of manufacturing such an IC are also disclosed.Type: GrantFiled: October 14, 2015Date of Patent: November 14, 2017Assignee: NXP B.V.Inventors: Aurelie Humbert, Roel Daamen, Youri Victorovitch Ponomarev
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Patent number: 9683099Abstract: Disclosed is an integrated circuit (100) comprising a semiconductor substrate (110) carrying a plurality of circuit elements (111); and a carbon dioxide sensor (120) over said semiconductor substrate, said sensor comprising a pair of electrodes (122, 124) laterally separated from each other; and a carbon dioxide (CO2) permeable polymer matrix (128) at least partially covering the pair of electrodes, said matrix encapsulating a liquid (126) comprising an organic alcohol and an organic amidine or guanidine base. A composition for forming such a CO2 sensor on the IC and a method of manufacturing such an IC are also disclosed.Type: GrantFiled: September 4, 2014Date of Patent: June 20, 2017Assignee: AMS INTERNATIONAL AGInventors: Rafael Sablong, Aurelie Humbert, Bjorn Tuerlings, Cornelis Bastiaansen, Dirk Gravesteijn, Dimitri Soccol, Jan Kolijn
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Patent number: 9632049Abstract: Disclosed is an integrated circuit comprising an electrode arrangement for detecting the presence of a liquid, said electrode arrangement comprising a first electrode and a second electrode, wherein, prior to exposure of the electrode arrangement to said liquid, a surface of at least one of the first electrode and second electrode is at least partially covered by a compound that is soluble in the liquid; the electrical properties of the electrode arrangement being dependent on the amount of the compound covering said surface. An package and electronic device comprising such an IC and a method of manufacturing such an IC are also disclosed.Type: GrantFiled: December 7, 2010Date of Patent: April 25, 2017Assignee: AMS INTERNATIONAL AGInventors: Matthias Merz, Roel Daamen, Aurelie Humbert, Youri Victorovitch Ponomarev
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Patent number: 9546884Abstract: A sensor comprising a silicon substrate having a first and a second surface, integrated circuitry provided on the first surface of the silicon substrate, and a sensor structure provided on the second surface of the silicon substrate. The sensor structure and the integrated circuitry are electrically coupled to each other.Type: GrantFiled: September 24, 2010Date of Patent: January 17, 2017Assignee: NXP B.V.Inventors: Roel Daamen, Aurelie Humbert, Matthias Merz, Youri Victorovitch Ponomarev
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Patent number: 9523651Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate. The integrated circuit also includes an electrical impedance based gas sensor located on the substrate. The sensor includes first and second electrically conductive sensor electrodes. Each sensor electrode is enclosed in an electrically conductive corrosion protection material. The sensor also includes a gas sensitive material located between the sensor electrodes. The impedance of the gas sensitive material is sensitive to a gas to be sensed.Type: GrantFiled: September 10, 2013Date of Patent: December 20, 2016Assignee: AMS INTERNATIONAL AGInventors: Aurelie Humbert, Roel Daamen
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Patent number: 9453807Abstract: In one example, a thermal conductivity gas sensor is disclosed. The sensor includes a sensing element and an amplification material coupled to the sensing element. The amplification material has a target gas dependent thermal diffusivity. The sensing element measures the thermal diffusivity of the amplification material to determine a target gas concentration.Type: GrantFiled: April 8, 2014Date of Patent: September 27, 2016Assignee: AMS INTERNATIONAL AGInventors: Aurelie Humbert, Dimitri Soccol, Roel Daamen, Annelies Falepin
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Patent number: 9372166Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate. The integrated circuit also includes a relative humidity sensor on the substrate. The relative humidity sensor includes a first sensor electrode, a second sensor electrode, and a humidity sensitive layer covering the first and second electrodes. The integrated circuit further includes a thermal conductivity based gas sensor on the substrate. The thermal conductivity based gas sensor has an electrically resistive sensor element located above the humidity sensitive layer.Type: GrantFiled: October 7, 2013Date of Patent: June 21, 2016Assignee: AMS INTERNATIONAL AGInventors: Roel Daamen, Aurelie Humbert, Pascal Bancken
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Publication number: 20160163766Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a thermal conductivity based gas sensor having an electrically resistive sensor element located on the major surface for exposure to a gas to be sensed. The integrated circuit further includes a barrier located on the major surface for inhibiting a flow of the gas across the sensor element.Type: ApplicationFiled: February 11, 2016Publication date: June 9, 2016Inventors: Aurelie HUMBERT, Roel DAAMEN, Viet Hoang NGUYEN
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Patent number: 9263500Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a thermal conductivity based gas sensor having an electrically resistive sensor element located on the major surface for exposure to a gas to be sensed. The integrated circuit further includes a barrier located on the major surface for inhibiting a flow of the gas across the sensor element.Type: GrantFiled: March 28, 2013Date of Patent: February 16, 2016Assignee: ams International AGInventors: Aurelie Humbert, Roel Daamen, Viet Hoang Nguyen
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Publication number: 20160043265Abstract: Disclosed is an integrated circuit comprising a substrate (10); and an optical CO2 sensor comprising: first and second light sensors (12, 12?) on said substrate, said second light sensor being spatially separated from the first light sensor; and a layer portion (14) including an organic compound comprising at least one amine or amidine functional group over the first light sensor; wherein said integrated circuit further comprises a signal processor (16) coupled to the first and second light sensor for determining a difference in the respective outputs of the first and second light sensor. An electronic device comprising such a sensor and a method of manufacturing such an IC are also disclosed.Type: ApplicationFiled: October 14, 2015Publication date: February 11, 2016Inventors: Aurelie Humbert, Roel Daamen, Youri Victorovitch Ponomarev
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Patent number: 9244031Abstract: A gas sensor on a semiconductor substrate. The gas sensor includes an elongate sensor element extending across an opening and has first and second opposed surfaces exposed for contact with a gas to be sensed. The first surface faces away from a major surface of the substrate. The second surface faces toward said major surface. The electrical conductivity of the elongate sensor element is sensitive to a composition and/or concentration of said gas to which the opposed first and second surfaces are exposable. The gas sensor further includes a support structure arranged to increase the mechanical robustness of the gas sensor by supporting the elongate sensor element in the opening.Type: GrantFiled: July 24, 2012Date of Patent: January 26, 2016Assignee: NXP, B.V.Inventors: Aurelie Humbert, David Tio Castro
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Patent number: 9188540Abstract: Disclosed is an integrated circuit comprising a substrate (10); and an optical CO2 sensor comprising: first and second light sensors (12, 12?) on said substrate, said second light sensor being spatially separated from the first light sensor; and a layer portion (14) including an organic compound comprising at least one amine or amidine functional group over the first light sensor; wherein said integrated circuit further comprises a signal processor (16) coupled to the first and second light sensor for determining a difference in the respective outputs of the first and second light sensor. An electronic device comprising such a sensor and a method of manufacturing such an IC are also disclosed.Type: GrantFiled: January 3, 2014Date of Patent: November 17, 2015Assignee: NXP B.V.Inventors: Aurelie Humbert, Roel Daamen, Youri Victorovitch Ponomarev