Patents by Inventor Aurelie Tauzin

Aurelie Tauzin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11251321
    Abstract: An engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a first bonding layer on the seed layer; a support substrate made of a second semiconductor material; a second bonding layer on a first side of the support substrate; a bonding interface between the first and second bonding layers; the first and second bonding layers each made of metallic material; wherein doping concentration and thickness of the engineered substrate, in particular, of the seed layer, the support substrate, and both the first and second bonding layers, are selected such that the absorption of the seed layer is less than 20%, preferably less than 10%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 5 mOhm·cm2.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: February 15, 2022
    Assignees: Soitec, Commissariat A L'Energie Atomigue et aux Energies Alternatives
    Inventors: Eric Guiot, Aurelie Tauzin, Thomas Signamarcheix, Emmanuelle Lagoutte
  • Publication number: 20210193853
    Abstract: An engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a first bonding layer on the seed layer; a support substrate made of a second semiconductor material; a second bonding layer on a first side of the support substrate; a bonding interface between the first and second bonding layers; the first and second bonding layers each made of metallic material; wherein doping concentration and thickness of the engineered substrate, in particular, of the seed layer, the support substrate, and both the first and second bonding layers, are selected such that the absorption of the seed layer is less than 20%, preferably less than 10%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 5 mOhm·cm2.
    Type: Application
    Filed: January 27, 2017
    Publication date: June 24, 2021
    Applicants: Soitec, Commissariat A L'Energie Atomique et aux Energies Alternatives, Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Eric Guiot, Aurelie Tauzin, Thomas Signamarcheix, Emmanuelle Lagoutte
  • Patent number: 10236210
    Abstract: The method is carried out of a first substrate having a first layer made of a first material with a second substrate having a second layer made of a second material, the first material and the second material being of different natures and selected from alloys of elements of columns III and V, the method having the steps of: a) providing the first substrate and the second substrate, b) bringing the first substrate into contact with the second substrate so as to form a bonding interface between the first layer and the second layer, c) performing a first heat treatment at a first predefined temperature, d) thinning one of the substrates, e) depositing, at a temperature less than or equal to the first predefined temperature, a barrier layer, on the thinned substrate, and f) performing a second heat treatment at a second predefined temperature, greater than the first predefined temperature.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: March 19, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Aurélie Tauzin, Bruno Imbert
  • Publication number: 20180315644
    Abstract: The invention relates to a method of treating a thin film transferred from a donor substrate to a receiver substrate by fracture at the level of a zone of the donor substrate which is made fragile by hydrogen ion implantation. The method includes a step of thinning the transferred thin film so as to eliminate a region of residual defects induced by the hydrogen ion implantation. The method also includes, directly after the fracture and before the step of thinning of the transferred thin film, a step of forming a hydrogen trapping layer in the region of residual defects of the transferred thin film. A thermal processing may be implemented after formation of the hydrogen trapping layer and before thinning of the thin film.
    Type: Application
    Filed: October 28, 2016
    Publication date: November 1, 2018
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Aurelie TAUZIN, Emmanuelle LAGOUTTE, Frederic MAZEN, Flavia PIEGAS LUCE, Shay REBOH
  • Publication number: 20180151436
    Abstract: The method is carried out of a first substrate having a first layer made of a first material with a second substrate having a second layer made of a second material, the first material and the second material being of different natures and selected from alloys of elements of columns III and V, the method having the steps of: a) providing the first substrate and the second substrate, b) bringing the first substrate into contact with the second substrate so as to form a bonding interface between the first layer and the second layer, c) performing a first heat treatment at a first predefined temperature, d) thinning one of the substrates, e) depositing, at a temperature less than or equal to the first predefined temperature, a barrier layer, on the thinned substrate, and f) performing a second heat treatment at a second predefined temperature, greater than the first predefined temperature.
    Type: Application
    Filed: May 12, 2016
    Publication date: May 31, 2018
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Aurélie TAUZIN, Bruno IMBERT
  • Patent number: 9123641
    Abstract: A method for transferring InP film onto a stiffener substrate, the method including: providing a structure comprising an InP surface layer and an underlying doped thin InP layer; implanting hydrogen ions through the surface layer so as to create a weakened plane in the doped thin layer, delimiting a film comprising the surface layer; placing the surface layer in close contact with a stiffener substrate; and applying heat treatment to obtain splitting at the weakened plane and transfer of the film onto the stiffener substrate.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: September 1, 2015
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Aurelie Tauzin
  • Patent number: 9105688
    Abstract: A process for forming a layer (26) of semiconductor material from a substrate (20), or donor substrate, made of the same semiconductor material is described, comprising: formation in said donor substrate of a high lithium concentration zone (22), with a concentration between 5×1018 atoms/cm3 and 5×1020 atoms/cm3, then a hydrogen implantation (24) in the donor substrate, in, or in the vicinity of, the high lithium concentration zone, application of a stiffener (19) with the donor substrate, application of a thermal budget to result in the detachment of the layer (34) defined by the implantation.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: August 11, 2015
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Aurelie Tauzin, Frederic Mazen
  • Patent number: 8993408
    Abstract: A process for detaching a silicon thin film from a donor substrate by cleaving, includes implanting species within the donor substrate to form a weak layer. The species are implanted at a depth at least equal to the thickness of the thin film to be detached. There is a heat treatment at 450° C. or more and cleaving is along the weak layer. The implanting species includes implanting boron, helium and hydrogen with implantation energies such that: helium and boron concentration maxima are obtained at substantially the same depth, separated by at most 10 nm; and a hydrogen concentration maximum is obtained at a depth at least 20 nm greater than that of the helium and boron concentration maxima. The implantation dose of boron is at least equal to 5×1013 B/cm2 and the dose of helium and hydrogen is at least 1016 atoms/cm2 and at most 4×1016 atoms/cm2.
    Type: Grant
    Filed: August 25, 2010
    Date of Patent: March 31, 2015
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventor: Aurelie Tauzin
  • Patent number: 8778775
    Abstract: A method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate includes GaN, where the method includes bombarding the free face of the substrate with helium and hydrogen atoms, the helium being implanted first into the thickness of the thick surface area and the hydrogen being implanted thereafter, and where the helium and hydrogen doses each vary between 1.1017 atoms/cm2 and 4.1017 atoms/cm2. The starting substrate is subjected to a rupture process in order to induce the separation, relative to a residue of the starting substrate, of the entire portion of the thick area located between the free face and the helium and hydrogen implantation depth. The helium is advantageously implanted in a dose at least equal to that of hydrogen, and can also be implanted alone.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: July 15, 2014
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Aurélie Tauzin, Jérôme Dechamp, Frédéric Mazen, Florence Madeira
  • Publication number: 20140113434
    Abstract: A process for forming a layer (26) of semiconductor material from a substrate (20), or donor substrate, made of the same semiconductor material is described, comprising: formation in said donor substrate of a high lithium concentration zone (22), with a concentration between 5×1018 atoms/cm3 and 5×1020 atoms/cm3, then a hydrogen implantation (24) in the donor substrate, in, or in the vicinity of, the high lithium concentration zone, application of a stiffener (19) with the donor substrate, application of a thermal budget to result in the detachment of the layer (34) defined by the implantation.
    Type: Application
    Filed: April 27, 2012
    Publication date: April 24, 2014
    Applicant: Commissariat a l'energie atomique et aux ene alt
    Inventors: Aurelie Tauzin, Frederic Mazen
  • Patent number: 8693835
    Abstract: A method for transferring a thin layer from a lithium-based first substrate includes proton exchange between the first substrate and a first electrolyte, which is an acid, through a free face of the first substrate so as to replace lithium ions of the first substrate by protons, in a proportion between 10% and 80%, over a first depth e1. A reverse proton exchange between the first substrate and a second electrolyte, through the free face is carried out so as to replace substantially all the protons with lithium ions over a second depth e2 smaller than the first depth e1, and so as to leave an intermediate layer between the depths e1 and e2, in which intermediate layer protons incorporated during the proton exchange step remain. The depth e2 defines a thin layer between the free face and the intermediate layer. A heat treatment is carried out under conditions suitable for embrittling the intermediate layer and the thin film is separated from the first substrate at the intermediate layer.
    Type: Grant
    Filed: April 10, 2009
    Date of Patent: April 8, 2014
    Assignees: Commissariat a l'Energie Atomique et aux Energies Alternatives, S.O.I. Tec Silicon on Insulator Technologies
    Inventors: Aurélie Tauzin, Jean-Sébastien Moulet
  • Publication number: 20140057423
    Abstract: A method for transferring InP film onto a stiffener substrate, the method including: providing a structure comprising an InP surface layer and an underlying doped thin InP layer; implanting hydrogen ions through the surface layer so as to create a weakened plane in the doped thin layer, delimiting a film comprising the surface layer; placing the surface layer in close contact with a stiffener substrate; and applying heat treatment to obtain splitting at the weakened plane and transfer of the film onto the stiffener substrate.
    Type: Application
    Filed: August 23, 2013
    Publication date: February 27, 2014
    Applicant: Commissariat A L'energie Atomique Et Aux Energies Alternatives
    Inventor: Aurelie TAUZIN
  • Patent number: 8546238
    Abstract: A method for transferring a micro-technological layer includes preparing a substrate having a porous layer buried beneath a useful surface, forming an embrittled zone between it and the surface, bonding the substrate to a supporting substrate, causing detachment at the porous layer by mechanical stress to obtain a first substrate remnant, and a bare surfaced detached layer joined to the supporting substrate, performing technological steps on the bared surface of the detached layer, bonding the detached layer, by the surface to which the technological steps had been applied, to a second supporting substrate, causing detachment, at the embrittled zone, by heat treatment to obtain a detached layer remnant joined to the second supporting substrate, and the detached layer remnant joined to the first supporting substrate.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: October 1, 2013
    Assignee: Commissariat a l'Energie Atomique et aux Energies
    Inventors: Aurelie Tauzin, Anne-Sophie Stragier
  • Patent number: 8309431
    Abstract: A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.
    Type: Grant
    Filed: October 28, 2004
    Date of Patent: November 13, 2012
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Nguyet-Phuong Nguyen, Ian Cayrefourcq, Christelle Lagahe-Blanchard, Konstantin Bourdelle, Aurélie Tauzin, Franck Fournel
  • Publication number: 20120138238
    Abstract: In order to detach a silicon thin film from a starting substrate by splitting, a step of implanting species within the starting substrate (10) through a free surface is carried out in order to form a weakening layer (13), at least one intermediate step at a temperature of at least 450° C. before and/or after an optional securing step for tightly contacting the free surface with a stiffener, and then a detachment step by splitting along the weakening layer. The implantation step comprises implanting boron, helium, and hydrogen in any order at implantation energies such that maximum boron and helium concentrations are obtained substantially at one and the same depth, with a maximum difference of 10 nm, said maximum concentrations being at a shallower level than the maximum hydrogen concentration, and at implantation doses such that the boron dose is at least equal to 5.1013 B/cm2 and the total helium and hydrogen dose is at least equal to 1016 atoms/cm2 and at most equal to 4.
    Type: Application
    Filed: August 25, 2010
    Publication date: June 7, 2012
    Applicant: Commissariat a L'Energie Atomique aux Energies Alternatives
    Inventor: Aurelie Tauzin
  • Publication number: 20120088351
    Abstract: A method for transferring a micro-technological layer includes preparing a substrate having a porous layer buried beneath a useful surface, forming an embrittled zone between it and the surface, bonding the substrate to a supporting substrate, causing detachment at the porous layer by mechanical stress to obtain a first substrate remnant, and a bare surfaced detached layer joined to the supporting substrate, performing technological steps on the bared surface of the detached layer, bonding the detached layer, by the surface to which the technological steps had been applied, to a second supporting substrate, causing detachment, at the embrittled zone, by heat treatment to obtain a detached layer remnant joined to the second supporting substrate, and the detached layer remnant joined to the first supporting substrate.
    Type: Application
    Filed: October 12, 2011
    Publication date: April 12, 2012
    Applicant: Commissariat a I'energie atomique
    Inventors: Aurelie Tauzin, Anne-Sophie Stragier
  • Patent number: 8021959
    Abstract: A method for forming a plurality of thin films from a microtechnological donar substrate with a view to recycling of the donor substrate, the method including exposing a face of the donor substrate by fracturing the donor substrate along a layer weakened by implantation and placing the exposed face in a bath and applying ultrasound with a frequency of between 10 kHz and 80 kHz under conditions suitable for causing cavitation along the exposed face. In the case of a silicon donor substrate, the bath is exposed to an ultrasound power per unit volume of greater than 5 W/I, at a power of greater than 10 W with a duration of greater than 1 minute, and at a temperature between 1° C. and 100° C.
    Type: Grant
    Filed: September 23, 2010
    Date of Patent: September 20, 2011
    Assignee: Commissariat a l'Energie Atomique et Aux Energies Alternatives
    Inventor: Aurelie Tauzin
  • Patent number: 7927980
    Abstract: The invention concerns a method for forming a growth mask on the surface of an initial crystalline substrate, comprising the following steps: formation of a layer of second material on one of the faces of the initial substrate of first material, formation of a pattern in the thickness of the layer of second material so as to expose the zones of said face of the initial substrate, said zones forming growth windows on the initial substrate, the method being characterized in that the formation of the pattern is obtained by ion implantation carried out in the surface layer of the initial substrate underlying the layer of second material, the implantation conditions being such that they cause, directly or after a heat treatment, on said face of the initial substrate, the appearance of exfoliated zones of first material leading to the localized removal of the zones of second material covering the exfoliated zones of first material, thereby locally exposing the initial substrate and forming growth windows on
    Type: Grant
    Filed: November 25, 2005
    Date of Patent: April 19, 2011
    Assignee: COMMISSARIAT a l'Energie Atomique
    Inventors: Aurélie Tauzin, Chrystelle Lagahe-Blanchard
  • Publication number: 20110076836
    Abstract: A method for forming a plurality of thin films from a microtechnological donar substrate with a view to recycling of the donor substrate, the method including exposing a face of the donor substrate by fracturing the donor substrate along a layer weakened by implantation and placing the exposed face in a bath and applying ultrasound with a frequency of between 10 kHz and 80 kHz under conditions suitable for causing cavitation along the exposed face. In the case of a silicon donor substrate, the bath is exposed to an ultrasound power per unit volume of greater than 5 W/I, at a power of greater than 10 W with a duration of greater than 1 minute, and at a temperature between 1° C. and 100° C.
    Type: Application
    Filed: September 23, 2010
    Publication date: March 31, 2011
    Inventor: Aurelie Tauzin
  • Publication number: 20110030889
    Abstract: A method for transferring a thin layer from a lithium-based first substrate includes proton exchange between the first substrate and a first electrolyte, which is an acid, through a free face of the first substrate so as to replace lithium ions of the first substrate by protons, in a proportion between 10% and 80%, over a first depth e1. A reverse proton exchange between the first substrate and a second electrolyte, through the free face is carried out so as to replace substantially all the protons with lithium ions over a second depth e2 smaller than the first depth e1, and so as to leave an intermediate layer between the depths e1 and e2, in which intermediate layer protons incorporated during the proton exchange step remain. The depth e2 defines a thin layer between the free face and the intermediate layer. A heat treatment is carried out under conditions suitable for embrittling the intermediate layer and the thin film is separated from the first substrate at the intermediate layer.
    Type: Application
    Filed: April 10, 2009
    Publication date: February 10, 2011
    Inventors: Aurélie Tauzin, Jean-Sébastien Moulet