Abstract: The invention relates to a method for manufacturing an optoelectronic device (1) with a diode array (20), including the following steps: producing an electret layer (30) having conversion zones (Zc) separated two-by-two by a spacing zone (Ze) with zero surface potential, where each conversion zone (Zc) is formed of a plurality of so-called polarized elementary zones (32) with non-zero surface potential, spaced apart two-by-two by a so-called non-polarized elementary zone (33) with zero surface potential, such that the conversion zone (Zc) has a structured surface potential; producing color conversion pads (P), by placing the electret layer (30) in contact with a colloidal solution(S) containing photoluminescent particles (p).

Abstract: A method for manufacturing an optoelectronic device including an array of diodes and photoluminescent pads arranged opposite at least one diode, including making an electret layer over the array of diodes, by localized polarization or depolarization, optically, so as to form surface potential patterns; and making the photoluminescent pads, by contact of the electret layer with a colloidal solution containing photoluminescent particles, which are then deposited over the upper face of the electret layer opposite the predefined surface potential patterns, thereby forming the photoluminescent pads.

Abstract: The invention relates to a method for manufacturing an optoelectronic device (1) including an array of diodes (D1, D2, D3) and an array of colour conversion portions (P1, P2), including the following steps: providing the array of diodes (D1, D2, D3), and the upper electrode layers (E1, E2, E3); depositing a dielectric layer (26) having a substantially zero surface potential; applying a potential difference between an electrode (2) and the first upper electrode layers (E1), resulting in the formation of first patterns (M1) with non-zero surface potential in the dielectric layer (26); producing the first colour conversion portions (P1), by contacting the dielectric layer (26) with a colloidal solution (S1) containing first photoluminescent particles (p1).

Abstract: A method for manufacturing an optoelectronic device including an array of diodes and photoluminescent pads arranged opposite at least one diode, including making an electret layer over the array of diodes, by localized polarization or depolarization, optically, so as to form surface potential patterns; and making the photoluminescent pads, by contact of the electret layer with a colloidal solution containing photoluminescent particles, which are then deposited over the upper face of the electret layer opposite the predefined surface potential patterns, thereby forming the photoluminescent pads.

Abstract: A method for coating chips resting, by a rear face opposite to a front face, on a main face of a support substrate, and separated from each other by an inter-chip space, includes a step of forming a photosensitive coating film covering the front faces and the inter-chip spaces. The method further includes a first photolithographic sequence which comprises an insolation sub-step, and a dissolution sub-step. The sequence leads to a partial removal of the photosensitive coating film so as to maintain the film exclusively at the inter-chip spaces and, advantageously recessed relative to the front faces.

Abstract: The invention relates to a diffuser 3 intended to be facing a light source 1 comprising a transmission layer 10 and a diffusion layer 22, 23 intended to diffuse a light transmitted by the light source, the diffuser being characterised in that the diffusion layer comprises a plurality of metal structures 200, 200a, 200b, called metal nanostructures, having dimensions less than a wavelength of the light transmitted, said metal nanostructures having varied sizes and being distributed within the diffusion layer such that adjacent metal nanostructures have between them, varied distances and preferably less than the wavelength of the light transmitted. The invention also relates to a method for manufacturing such a diffuser, and a display system comprising such a diffuser.

Abstract: A structure for the testing of an electronic circuit for addressing a matrix of cells including a plurality of blocks containing at least one first material, piezoelectric and/or dielectric, the dielectric properties of which can be modulated according to the intensity of an electric field that is applied to it, at least one separation region between the blocks, the structure further including a shared electrode connected to a first end of the blocks containing the first material, a second end of the blocks containing the first material being arranged with respect to a face of the structure called “contact face”, so that when the contact face is disposed on the addressing circuit, the second end of the blocks is connected to at least one conductive stud of the addressing circuit.

Abstract: A method for coating chips resting, by a rear face opposite to a front face, on a main face of a support substrate, and separated from each other by an inter-chip space, includes a step of forming a photosensitive coating film covering the front faces and the inter-chip spaces. The method further includes a first photolithographic sequence which comprises an insolation sub-step, and a dissolution sub-step. The sequence leads to a partial removal of the photosensitive coating film so as to maintain the film exclusively at the inter-chip spaces and, advantageously recessed relative to the front faces.

Abstract: The invention relates to a diffuser 3 intended to be facing a light source 1 comprising a transmission layer 10 and a diffusion layer 22, 23 intended to diffuse a light transmitted by the light source, the diffuser being characterised in that the diffusion layer comprises a plurality of metal structures 200, 200a, 200b, called metal nanostructures, having dimensions less than a wavelength of the light transmitted, said metal nanostructures having varied sizes and being distributed within the diffusion layer such that adjacent metal nanostructures have between them, varied distances and preferably less than the wavelength of the light transmitted. The invention also relates to a method for manufacturing such a diffuser, and a display system comprising such a diffuser.

Abstract: A light emitting bipolar transistor, comprising at least: first, second and third portions of doped semiconductor, forming a collector, a base and an emitter respectively of the light emitting bipolar transistor; at least one quantum well arranged in the first portion and between two first barrier layers formed by the doped semiconductor of the first portion; and in which the levels of the energy bands of the doped semiconductor of the first portion are higher than those of a semiconductor forming the quantum well which is configured to produce the light emission of the bipolar transistor.

Abstract: An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.

Abstract: An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.