Patents by Inventor Aurelien Suhm
Aurelien Suhm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955585Abstract: A method for coating chips resting, by a rear face opposite to a front face, on a main face of a support substrate, and separated from each other by an inter-chip space, includes a step of forming a photosensitive coating film covering the front faces and the inter-chip spaces. The method further includes a first photolithographic sequence which comprises an insolation sub-step, and a dissolution sub-step. The sequence leads to a partial removal of the photosensitive coating film so as to maintain the film exclusively at the inter-chip spaces and, advantageously recessed relative to the front faces.Type: GrantFiled: March 2, 2020Date of Patent: April 9, 2024Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Aurélien Suhm, Maxime Argoud
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Patent number: 11592601Abstract: The invention relates to a diffuser 3 intended to be facing a light source 1 comprising a transmission layer 10 and a diffusion layer 22, 23 intended to diffuse a light transmitted by the light source, the diffuser being characterised in that the diffusion layer comprises a plurality of metal structures 200, 200a, 200b, called metal nanostructures, having dimensions less than a wavelength of the light transmitted, said metal nanostructures having varied sizes and being distributed within the diffusion layer such that adjacent metal nanostructures have between them, varied distances and preferably less than the wavelength of the light transmitted. The invention also relates to a method for manufacturing such a diffuser, and a display system comprising such a diffuser.Type: GrantFiled: September 25, 2020Date of Patent: February 28, 2023Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Salim Boutami, Bernard Aventurier, Stéphane Getin, Aurélien Suhm, Pierre Joly
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Publication number: 20220299562Abstract: A structure for the testing of an electronic circuit for addressing a matrix of cells including a plurality of blocks containing at least one first material, piezoelectric and/or dielectric, the dielectric properties of which can be modulated according to the intensity of an electric field that is applied to it, at least one separation region between the blocks, the structure further including a shared electrode connected to a first end of the blocks containing the first material, a second end of the blocks containing the first material being arranged with respect to a face of the structure called “contact face”, so that when the contact face is disposed on the addressing circuit, the second end of the blocks is connected to at least one conductive stud of the addressing circuit.Type: ApplicationFiled: March 14, 2022Publication date: September 22, 2022Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Aurélien SUHM, Gwenaël LE RHUN, Nicolas DEVANCIARD
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Publication number: 20220149245Abstract: A method for coating chips resting, by a rear face opposite to a front face, on a main face of a support substrate, and separated from each other by an inter-chip space, includes a step of forming a photosensitive coating film covering the front faces and the inter-chip spaces. The method further includes a first photolithographic sequence which comprises an insolation sub-step, and a dissolution sub-step. The sequence leads to a partial removal of the photosensitive coating film so as to maintain the film exclusively at the inter-chip spaces and, advantageously recessed relative to the front faces.Type: ApplicationFiled: March 2, 2020Publication date: May 12, 2022Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Aurélien SUHM, Maxime ARGOUD
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Publication number: 20210149091Abstract: The invention relates to a diffuser 3 intended to be facing a light source 1 comprising a transmission layer 10 and a diffusion layer 22, 23 intended to diffuse a light transmitted by the light source, the diffuser being characterised in that the diffusion layer comprises a plurality of metal structures 200, 200a, 200b, called metal nanostructures, having dimensions less than a wavelength of the light transmitted, said metal nanostructures having varied sizes and being distributed within the diffusion layer such that adjacent metal nanostructures have between them, varied distances and preferably less than the wavelength of the light transmitted. The invention also relates to a method for manufacturing such a diffuser, and a display system comprising such a diffuser.Type: ApplicationFiled: September 25, 2020Publication date: May 20, 2021Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Salim BOUTAMI, Bernard AVENTURIER, Stéphane GETIN, Aurélien SUHM, Pierre JOLY
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Publication number: 20200135968Abstract: A light emitting bipolar transistor, comprising at least: first, second and third portions of doped semiconductor, forming a collector, a base and an emitter respectively of the light emitting bipolar transistor; at least one quantum well arranged in the first portion and between two first barrier layers formed by the doped semiconductor of the first portion; and in which the levels of the energy bands of the doped semiconductor of the first portion are higher than those of a semiconductor forming the quantum well which is configured to produce the light emission of the bipolar transistor.Type: ApplicationFiled: October 30, 2019Publication date: April 30, 2020Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Anis Daami, Alexandre Ferron, Aurelien Suhm
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Patent number: 9673269Abstract: An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.Type: GrantFiled: September 4, 2011Date of Patent: June 6, 2017Assignee: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Emmanuel Defay, Gwenaël Le Rhun, Aurélien Suhm
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Publication number: 20120056299Abstract: An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.Type: ApplicationFiled: September 4, 2011Publication date: March 8, 2012Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Emmanuel DEFAY, Gwenaël LE RHUN, Aurélien SUHM