Abstract: Disclosed is an integrated processor assembly and a method for making that assembly, including the steps of providing a semiconducting substrate, fabricating integrated processing circuitry in the substrate, depositing a plurality of input strip lines from a first edge of the substrate to the circuitry, depositing a plurality of output leads from the circuitry to a second edge of the substrate, repeating these steps for a plurality of substrates, and bonding the substrates together so that the terminated input strip lines define a two dimensional array of contact points.

Abstract: A method of making a junction in semiconductive materials to improve the spectral response of the junction in photovoltaic detectors. A first layer of semiconductive material is grown, by epitaxy technique, on a substrate of semiconductive material of the same conductivity type. Growth of the first layer is discontinued and the temperature is changed. Then a second layer of opposite conductivity type is grown on the first layer.

Abstract: A high speed infrared detector for use as a receiver in a 10.6.mu.m communication system and being composed of a Pb.sub.0.8 Sn.sub.0.2 Te crystalline substrate, a 10.6.mu.m absorbing layer on said substrate composed of a p-type Pb.sub.0.8 Sn.sub.0.2 Te material and a 10.6.mu.m transparent layer disposed on said first layer and composed of a Pb.sub.0.9 Sn.sub.0.1 Te n-type material.

Abstract: An inverted heterojunction photodiode for use as a laser detector sensitive to the 8 - 14 .mu.m portion of the infrared spectrum and operable above 77.degree. K. The diode structure comprises a PbTe substrate, a first buffer layer of a Pb.sub..90 Sn.sub..10 Te material on said substrate and a second active layer of a Pb.sub..80 Sn.sub..20 Te material on said buffer layer. The first and second layers are grown by liquid phase epitaxy.