Abstract: A ferroelectric field-effect transistor having an endurance exceeding 1012 cycles is disclosed. The ferroelectric field-effect transistor includes a substrate, a source disposed over a first region of the semiconductor substrate, a drain disposed over a second region of the substrate, wherein the second region is spaced apart from the first region. The ferroelectric field-effect transistor includes a channel made of a semiconductor material within a third region of the substrate that is between the first region and the second region. The ferroelectric field-effect transistor further includes a gate stack having an interfacial layer disposed over the channel, wherein the interfacial layer has a permittivity that is greater than 3.9, and a layer of ferroelectric material disposed over the interfacial layer.