Patents by Inventor Avashai Kepten

Avashai Kepten has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming dielectric films
    Patent number: 6638876
    Abstract: A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. In one embodiment, the process is directed to forming a nitride layer on a substrate. In an alternative embodiment, the present invention is directed to forming a metal oxide or silicate on a semiconductor wafer. When forming a metal oxide or silicate, a passivation layer is first deposited onto the substrate.
    Type: Grant
    Filed: September 19, 2001
    Date of Patent: October 28, 2003
    Assignee: Mattson Technology, Inc.
    Inventors: Sagy Levy, Robin S. Bloom, Avashai Kepten
  • Method of forming dielectric films
    Publication number: 20020142624
    Abstract: A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. In one embodiment, the process is directed to forming a nitride layer on a substrate. In an alternative embodiment, the present invention is directed to forming a metal oxide or silicate on a semiconductor wafer. When forming a metal oxide or silicate, a passivation layer is first deposited onto the substrate.
    Type: Application
    Filed: September 19, 2001
    Publication date: October 3, 2002
    Applicant: Mattson Technology, Inc.
    Inventors: Sagy Levy, Robin S. Bloom, Avashai Kepten