Abstract: An optical metrology tool may include one or more illumination sources to generate illumination having wavelengths both within a short-wave infrared (SWIR) spectral range and outside the SWIR spectral range, illumination optics configured to direct the illumination to a sample, a first imaging channel including a first detector configured to image the sample based on a first wavelength range including at least some wavelengths in the SWIR spectral range, a second imaging channel including a second detector configured to image the sample based on a second wavelength range including at least some wavelengths outside the SWIR spectral range, and a controller. The controller may receive first images of the sample from the first detector, receive second images of the sample from the second detector, and generate an optical metrology measurement of the sample based on the first and second images.

Abstract: A method includes generating a sequence of images of a semiconductor wafer from first and second detectors. The first detector images the wafer with first imaging parameters and the second detector images the wafer with second imaging parameters. The first or second imaging parameters are varied across the sequence of images to provide variation at sites across the wafer. The method includes providing a metric indicative of center-of-symmetry variations of first and second target features as a function of the varied imaging parameters based on the sequence of images. The method includes identifying a landscape of values of the varied image parameters for which the metric are below a predefined limit. The method includes generating a recipe for metrology measurements in which the varied imaging parameters are set to values within the landscape. The method includes generating metrology measurements from a production wafer based on the recipe.

Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

Abstract: A tunable filter may include an input focusing optic, an output focusing optic, a linearly-varying filter located at a back focal plane of the input focusing optic and a front focal plane of the output focusing optic, an input angular scanning component located at a front focal plane of the input focusing optic configured to receive an input beam, and an output angular scanning component located at a back focal plane of the output focusing optic. The input focusing optic may receive the input beam from the input angular scanning component and direct the input beam to the linearly-varying filter, where a position of the input beam on the linearly-varying filter is selectable based on an angle of the input angular scanning component. The output focusing optic may receive a filtered beam from the linearly-varying filter and direct the filtered beam to the output angular scanning component.

Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

Abstract: An optical metrology tool may include one or more illumination sources to generate illumination having wavelengths both within a short-wave infrared (SWIR) spectral range and outside the SWIR spectral range, illumination optics configured to direct the illumination to a sample, a first imaging channel including a first detector configured to image the sample based on a first wavelength range including at least some wavelengths in the SWIR spectral range, a second imaging channel including a second detector configured to image the sample based on a second wavelength range including at least some wavelengths outside the SWIR spectral range, and a controller. The controller may receive first images of the sample from the first detector, receive second images of the sample from the second detector, and generate an optical metrology measurement of the sample based on the first and second images.

Abstract: A metrology measurement apparatus may include one or more illumination sources, a beamsplitter configured to receive illumination from the one or more illumination sources from an illumination pathway and direct the illumination along a measurement pathway, and an objective lens. The objective lens may direct the illumination from the measurement pathway to a sample, collect light from the sample, and direct the collected light along the measurement pathway to the beamsplitter such that the beamsplitter may direct the collected light along a collection pathway to a detector. The apparatus may further include a pupil-plane scanner along the measurement pathway with a pupil relay and a deflector in a relayed pupil plane such that adjusting the deflector adjusts a position of the illumination spot on the sample without modifying a position of the illumination pupil distribution or a position of a distribution of the collected light along the collection pathway.

Abstract: A spectral filter includes a curved filtering element including a concave surface forming a portion of a sphere. The concave surface may be positioned to receive light diverging from an output face of an optical fiber located at a first location proximate to a center of the sphere corresponding to the concave surface. The concave surface may transmit a first portion of a spectrum of the light. The concave surface may further reflect and focus a second portion of the spectrum to a second location proximate to the center of the sphere. The spectral filter may further include a collector to direct the second portion of the spectrum away from the output face of the optical fiber.

Abstract: An illumination source may include two or more input light sources, a collector, and any combination of a beam uniformizer, a speckle reducer, or any number of output fibers to provide a selected illumination etendue. The collector may include one or more lenses to combine illumination from the two or more input light sources into an illumination beam, where the illumination from the two or more input light sources occupy different portions of an input aperture of the collector. The beam uniformizer may include a first noncircular-core fiber to receive the illumination beam, a second noncircular-core fiber, and one or more coupling lenses to relay a far-field distribution of the illumination beam from the first noncircular-core fiber to an input face of the second noncircular-core fiber to provide output light with uniform near-field and far-field distributions.

Abstract: A tunable filter may include an input focusing optic, an output focusing optic, a linearly-varying filter located at a back focal plane of the input focusing optic and a front focal plane of the output focusing optic, an input angular scanning component located at a front focal plane of the input focusing optic configured to receive an input beam, and an output angular scanning component located at a back focal plane of the output focusing optic. The input focusing optic may receive the input beam from the input angular scanning component and direct the input beam to the linearly-varying filter, where a position of the input beam on the linearly-varying filter is selectable based on an angle of the input angular scanning component. The output focusing optic may receive a filtered beam from the linearly-varying filter and direct the filtered beam to the output angular scanning component.

Abstract: An illumination source may include two or more input light sources, a collector, and any combination of a beam uniformizer, a speckle reducer, or any number of output fibers to provide a selected illumination etendue. The collector may include one or more lenses to combine illumination from the two or more input light sources into an illumination beam, where the illumination from the two or more input light sources occupy different portions of an input aperture of the collector. The beam uniformizer may include a first noncircular-core fiber to receive the illumination beam, a second noncircular-core fiber, and one or more coupling lenses to relay a far-field distribution of the illumination beam from the first noncircular-core fiber to an input face of the second noncircular-core fiber to provide output light with uniform near-field and far-field distributions.

Abstract: An overlay metrology tool providing site-by-site alignment includes a controller coupled to a telecentric imaging system. The controller may receive two or more alignment images of an overlay target on a sample captured at two or more focal positions by the imaging system, generate alignment data indicative of an alignment of the overlay target within the imaging system based on the alignment images, set the alignment images as measurement images when the alignment of the overlay target is within selected alignment tolerances, direct the imaging system to adjust the alignment of the overlay target in the imaging system and further receive one or more measurement images from the imaging system when the alignment of the overlay target is outside the selected alignment tolerances, and determine overlay between two or more layers of the sample based on at least one of the measurement images.

Abstract: An overlay metrology tool providing site-by-site alignment includes a controller coupled to a telecentric imaging system. The controller may receive two or more alignment images of an overlay target on a sample captured at two or more focal positions by the imaging system, generate alignment data indicative of an alignment of the overlay target within the imaging system based on the alignment images, set the alignment images as measurement images when the alignment of the overlay target is within selected alignment tolerances, direct the imaging system to adjust the alignment of the overlay target in the imaging system and further receive one or more measurement images from the imaging system when the alignment of the overlay target is outside the selected alignment tolerances, and determine overlay between two or more layers of the sample based on at least one of the measurement images.

Abstract: A system for providing illumination to a measurement head for optical metrology is configured to combine illumination beams from a plurality of illumination sources to deliver illumination at one or more selected wavelengths to the measurement head. The intensity and/or spatial coherence of illumination delivered to the measurement head is controlled. Illumination at one or more selected wavelengths is delivered from a broadband illumination source configured for providing illumination at a continuous range of wavelengths.

Abstract: A spectral filter includes a curved filtering element including a concave surface forming a portion of a sphere. The concave surface may be positioned to receive light diverging from an output face of an optical fiber located at a first location proximate to a center of the sphere corresponding to the concave surface. The concave surface may transmit a first portion of a spectrum of the light. The concave surface may further reflect and focus a second portion of the spectrum to a second location proximate to the center of the sphere. The spectral filter may further include a collector to direct the second portion of the spectrum away from the output face of the optical fiber.

Abstract: The disclosure is directed to a system and method of controlling spectral attributes of illumination. According to various embodiments, a portion of illumination including an excluded selection of illumination spectra is blocked, while another portion of the illumination including a transmitted selection of illumination spectra is directed along an illumination path. In some embodiments, optical metrology is performed utilizing the spectrally controlled illumination to enhance measurement capability. For instance, the spectral attributes of illumination utilized to analyze different portions of a sample, such as different semiconductor layers, may be selected according to certain measurement characteristics associated with the analyzed portions of the sample.

Abstract: Methods and systems are provided, which pattern an illumination of a metrology target with respect to spectral ranges and/or polarizations, illuminate a metrology target by the patterned illumination, and measure radiation scattered from the target by directing, at a pupil plane, selected pupil plane pixels from a to respective single detector(s) by applying a collection pattern to the pupil plane pixels. Single detector measurements (compressive sensing) has increased light sensitivity which is utilized to pattern the illumination and further enhance the information content of detected scattered radiation with respect to predefined metrology parameters.

Abstract: A system for providing illumination to a measurement head for optical metrology is configured to combine illumination beams from a plurality of illumination sources to deliver illumination at one or more selected wavelengths to the measurement head. The intensity and/or spatial coherence of illumination delivered to the measurement head is controlled. Illumination at one or more selected wavelengths is delivered from a broadband illumination source configured for providing illumination at a continuous range of wavelengths.

Abstract: The disclosure is directed to systems for providing illumination to a measurement head for optical metrology. In some embodiments of the disclosure, illumination beams from a plurality of illumination sources are combined to deliver illumination at one or more selected wavelengths to the measurement head. In some embodiments of the disclosure, intensity and/or spatial coherence of illumination delivered to the measurement head is controlled. In some embodiments of the disclosure, illumination at one or more selected wavelengths is delivered from a broadband illumination source configured for providing illumination at a continuous range of wavelengths.