Patents by Inventor Avi Ben-Guioui

Avi Ben-Guioui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for fabricating a semiconductor chip having CMOS devices and fieldless array
    Patent number: 6583066
    Abstract: A method for etching an oxide-nitride-oxide (ONO) layer fabricated on a semiconductor wafer, the ONO layer including a lower oxide layer, a nitride layer located over the lower oxide layer, and an upper oxide layer located over the nitride layer. The method includes the steps of removing the upper oxide layer and a portion of the nitride layer using an isotropic plasma enhanced etch, and then removing the remainder of the nitride layer and a portion of the lower oxide layer using an isotropic plasma enhanced etch, wherein the semiconductor wafer is not exposed through the lower oxide layer. The method can be used to form gate electrodes and diffusion bit liens in a fieldless array of non-volatile memory cells.
    Type: Grant
    Filed: October 15, 2001
    Date of Patent: June 24, 2003
    Assignee: Tower Semiconductor, Ltd.
    Inventors: Efraim Aloni, Shai Kfir, Menchem Vofsy, Avi Ben-Guioui