Abstract: A Flash memory array comprises a plurality of Erase Sectors (Esecs) arranged in a plurality of Erase Sector Groups (ESGs), Physical Pages (slices), and Physical Sectors (PSecs), and there is a non-binary number of at least one of the Erase Sector Groups (ESGs), Physical Pages (slices), and Physical Sectors (PSecs). A user address is translated into a physical address using modular arithmetic to determine pointers (ysel, esg, psec) for specifying a given Erase Sector (ESec) within a given Erase Sector Group (ESG); a given Erase Sector Group (ESG) within a given Physical Sector (Psec); and a given Physical Sector (PSec) within the array.

Abstract: A multi-level cell (MLC) memory array may be programmed using a programming circuit having a binary input register to store data to be input into the MLC array and a register to store a programming vector, where each element in the programming vector corresponds to a charge storage region of an MLC in the array. A controller may map pairs of bits from the input register to elements in the programming vector, such that mapping a pair of bits to an element of the programming vector may set the vector element to a “program” value if the pair of bits corresponds to at least one specific program state associated with the programming vector.

Abstract: A Flash memory array comprises a plurality of Erase Sectors (Esecs) arranged in a plurality of Erase Sector Groups (ESGs), Physical Pages (slices), and Physical Sectors (PSecs), and there is a non-binary number of at least one of the Erase Sector Groups (ESGs), Physical Pages (slices), and Physical Sectors (PSecs). A user address is translated into a physical address using modular arithmetic to determine pointers (ysel, esg, psec) for specifying a given Erase Sector (ESec) within a given Erase Sector Group (ESG); a given Erase Sector Group (ESG) within a given Physical Sector (Psec); and a given Physical Sector (PSec) within the array.

Abstract: A balanced program rate on NVM cells is achieved by (i) scrambling data bits and user bits; and (ii) shifting ED bits (of data and user bits) according to an incremental shift number, which may be the PBE-counter (which provides an incremental number). ED bits for the LSS may also be shifted, according to an incremental shift number (which may be the PBE-counter). The ED bits of the shift-niumber inherently have an evenly balanced distribution The ED bits of the PBE-counter inherently have an evenly balanced distribution.

Abstract: During programming of memory cells, calculating sigma bits for cells programmed at each program level based on attributes of the cells, such an index representing a cell's bit location in the memory array. For example, summing the indexes with an increasing weight factor, such as factor-of-2. During read, new sigma bits are calculated and compared with the stored sigma bits. A difference between the new sigma bits and the stored sigma bits may define a unique combination of indexes, enabling searching for, finding and correcting the read errors. The sigma bits may be used to correctly identify which cells were programmed at which program level, despite threshold voltage drift and/or overlap. Programming may be performed with advertent overlapping distributions, and the bits can be sorted out.

Abstract: A multi-level cell (MLC) memory array may be programmed using a programming circuit having a binary input register to store data to be input into the MLC array and a register to store a programming vector, where each element in the programming vector corresponds to a charge storage region of an MLC in the array. A controller may map pairs of bits from the input register to elements in the programming vector, such that mapping a pair of bits to an element of the programming vector may set the vector element to a “program” value if the pair of bits corresponds to at least one specific program state associated with the programming vector.

Abstract: A multi-level cell (MLC) memory array may be programmed using a programming circuit having a binary input register to store data to be input into the MLC array and a register to store a programming vector, where each element in the programming vector corresponds to a charge storage region of an MLC in the array. A controller may map pairs of bits from the input register to elements in the programming vector such that mapping a pair of bits to an element of the programming vector may set the vector element to a “program” value if the pair of bits corresponds to at least one specific program state associated with the programming vector.

Abstract: A multi-level cell (MLC) memory array may be programmed using a programming circuit having a binary input register to store data to be input into the MLC array and a register to store a programming vector, where each element in the programming vector corresponds to a charge storage region of an MLC in the array. A controller may map pairs of bits from the input register to elements in the programming vector such that mapping a pair of bits to an element of the programming vector may set the vector element to a “program” value if the pair of bits corresponds to at least one specific program state associated with the programming vector.