Abstract: Embodiments relate to decoding data read from a non-volatile storage device, including determining error candidates for the data based on component codes, determining whether at least one first error candidate from the error candidates is found based on two of the component codes agreeing on a same error candidate, determining whether at least one second error candidate is found based on two of the component codes agreeing on a same error candidate in response to implementing a suggested correction at one of the error candidates, and correcting errors in the data based on at least one of whether the at least one first error candidate is found or whether the at least one second error candidate is found.

Abstract: Example implementations include a method of optimizing irregular error correction code components in memory devices, a method including obtaining one or more code rate parameters including a payload size parameter, a group size parameter, and a redundancy parameter generating a first number of first code component blocks associated with a first error correction capability, and a second number of code component blocks associated with a second error correction capability aligning the first code component blocks and the second code component blocks to the group size parameter aligning the first code component blocks and the second code component blocks to a code component length constraint, and generating, in accordance with an optimization metric based on the first error correction capability and the second error correction capability, first optimized code components based on the first code component blocks and second optimized code components based on the second code component blocks.

Abstract: A method for reading data from an SSD, comprising: retrieving data from a target row of memory cells using initial threshold voltages; decoding the data using a first hard decision decoding stage; estimating a bit error rate (BER) of a target row of memory cells based on a distribution of threshold voltages of cells in a memory block containing the target row when the first hard decision decoding stage fails; classifying the BER of the target row based on a first BER threshold (BER-TH1); and executing a first read flow comprising at least one hard decision decoding stage if the BER is less than the BER-TH1, and executing a second read flow similar to the first read flow if the BER is greater than or equal to the BER-TH1, the second read flow skipping a hard decision decoding stage of the first read flow.

Abstract: Disclosed herein are related to a system and a method for adjusting a read voltage threshold to read data from a plurality of memory dies of a nonvolatile memory device. Each of the plurality of memory dies comprises a plurality of blocks. A controller in communication with the plurality of memory dies may read, from a first block of the plurality of blocks, data corresponding to a read command received from a host. The controller may determine a bit error rate for the first block based on the data. The controller may update the read voltage threshold for the first block when the bit error rate for the first block exceeds a first error threshold. The read voltage threshold may be stored in the controller.

Abstract: Aspects of this technical solution can include selecting a plurality of memory locations at a memory device, the memory locations corresponding to a first page including a first plurality of bits and a second page including a second plurality of bits, modifying, based on the first plurality of bits and the second plurality of bits, a first voltage threshold corresponding to an estimated read voltage for the first plurality of bits, allocating, to a voltage range bounded by the first voltage threshold, a log-likelihood ratio (LLR), and decoding, based on the LLR corresponding to the voltage range, the first plurality of bits.

Abstract: Various implementations described herein relate to systems and methods for decoding data stored in a non-volatile storage device, including determining error candidates and determining whether at least one first error candidate from the error candidates is found based on two of the component codes agreeing on a same error candidate. In addition, whether at least one second error candidate is found based on two of the component codes agreeing on a same error candidate is determined in response to implementing a suggested correction at one of the error candidates. Errors in the data are corrected based on at least one of whether the at least one first error candidate is found or whether the at least one second error candidate is found.

Abstract: Aspects can include selecting memory locations at a memory device, the memory locations corresponding to a first page including a first plurality of bits and a second plurality of pages including corresponding second pluralities of bits, obtaining, based on the second pluralities of bits, extrinsic page information for a proposed error solution including a third plurality of bits indicating a reliability of respective bits of the first plurality of bits, and rejecting, in response to a determination that the proposed error solution indicates a modification to a reliable bit among the first plurality of bits, the proposed error solution to eliminate a false correction of the first plurality of bits.

Abstract: Various implementations described herein relate to systems and methods for detecting soft errors, including but not limited to, errors introduced after reading a codeword from a non-volatile memory, and before providing data to a host. Embodiments can include generating the codeword from the non-volatile memory to obtain at least input data, and determining validity of the input data using a first signature after processing the input data through a data path. If it is determined that the input data is valid using the first signature, the input data is sent to a host.

Abstract: A system for decoding data stored in a non-volatile storage device may include processing circuits configured to decode, in a first iteration, each of a plurality of component codes corresponding to the data by performing a first number of enumerations over hypotheses. The processing circuits may be configured to determine, in the first iteration, an extrinsic value output for each of the component codes based on log-likelihood ratios (LLRs) of one or more error bits of a codeword. The processing circuits may be configured to determine a second number of enumerations based on the extrinsic value. The processing circuits may be configured to decode, in a second iteration, each of the plurality of component codes by performing the second number of enumerations over hypotheses.

Abstract: Systems, methods, non-transitory computer-readable media for dynamically estimating interference compensation thresholds for read operations in non-volatile memory devices, including determining a plurality of interference states with respect to an interference source of a target row of a non-volatile memory to be read, determining compensation shifts for the plurality of interference states by determining a compensation shift for each of two or more interference states of the plurality of interference states, and applying the compensation shifts for the plurality of interference states to reading the target row.

Abstract: Systems, methods, non-transitory computer-readable media configured to perform operations associated with a storage medium. One system includes the storage medium and an encoding/decoding (ED) system, the ED system being configured to receive a set of input log-likelihood ratios (LLRs) of a component of the plurality of components, determine an extrinsic estimation function based on a set of features of the set of input LLRs, analyze the extrinsic estimation function to obtain a plurality of extrinsic LLR values, map the plurality of extrinsic LLR values to an input LLR of the set of input LLRs, and output, for each component, a plurality of updated LLR values based on the mapping.

Abstract: A method for reading data from an SSD, comprising: retrieving data from a target row of memory cells using initial threshold voltages; decoding the data using a first hard decision decoding stage; estimating a bit error rate (BER) of a target row of memory cells based on a distribution of threshold voltages of cells in a memory block containing the target row when the first hard decision decoding stage fails; classifying the BER of the target row based on a first BER threshold (BER-TH1); and executing a first read flow comprising at least one hard decision decoding stage if the BER is less than the BER-TH1, and executing a second read flow similar to the first read flow if the BER is greater than or equal to the BER-TH1, the second read flow skipping a hard decision decoding stage of the first read flow.

Abstract: Systems, methods, non-transitory computer-readable media to perform operations associated with the storage medium. One system includes a storage medium and an encoding/decoding (ED) system to perform operations associated with the storage medium, the ED system being configured to process a set of log-likelihood ratios (LLRs) and a syndrome vector to obtain a set of confidence values for each bit of a codeword, estimate an error vector based on selecting one or more bit locations with confidence values from the set of confidence values above threshold value and applying hard decision decoding to the selected one or more bit locations, calculate a sum LLR score for the estimated error vector, and output a decoded codeword based on the estimated error vector and the sum LLR score.

Abstract: Aspects of this technical solution can include selecting a plurality of memory locations at a memory device, the memory locations corresponding to a first page including a first plurality of bits and a second page including a second plurality of bits, modifying, based on the first plurality of bits and the second plurality of bits, a first voltage threshold corresponding to an estimated read voltage for the first plurality of bits, allocating, to a voltage range bounded by the first voltage threshold, a log-likelihood ratio (LLR), and decoding, based on the LLR corresponding to the voltage range, the first plurality of bits.

Abstract: Disclosed herein are related to a system and a method for adjusting a read voltage threshold to read data from a plurality of memory dies of a nonvolatile memory device. Each of the plurality of memory dies comprises a plurality of blocks. A controller in communication with the plurality of memory dies may read, from a first block of the plurality of blocks, data corresponding to a read command received from a host. The controller may determine a bit error rate for the first block based on the data. The controller may update the read voltage threshold for the first block when the bit error rate for the first block exceeds a first error threshold. The read voltage threshold may be stored in the controller.

Abstract: Systems, methods, non-transitory computer-readable media configured to perform operations associated with a storage medium. One system includes the storage medium and an encoding/decoding (ED) system, the ED system being configured to receive a set of input log-likelihood ratios (LLRs) of a component of the plurality of components, determine an extrinsic estimation function based on a set of features of the set of input LLRs, analyze the extrinsic estimation function to obtain a plurality of extrinsic LLR values, map the plurality of extrinsic LLR values to an input LLR of the set of input LLRs, and output, for each component, a plurality of updated LLR values based on the mapping.

Abstract: Aspects of this technical solution can include selecting a plurality of memory locations at a memory device, the memory locations corresponding to a first page including a first plurality of bits and a second page including a second plurality of bits, modifying, based on the first plurality of bits and the second plurality of bits, a first voltage threshold corresponding to an estimated read voltage for the first plurality of bits, allocating, to a voltage range bounded by the first voltage threshold, a log-likelihood ratio (LLR), and decoding, based on the LLR corresponding to the voltage range, the first plurality of bits.

Abstract: Aspects can include selecting memory locations at a memory device, the memory locations corresponding to a first page including a first plurality of bits and a second plurality of pages including corresponding second pluralities of bits, obtaining, based on the second pluralities of bits, extrinsic page information for a proposed error solution including a third plurality of bits indicating a reliability of respective bits of the first plurality of bits, and rejecting, in response to a determination that the proposed error solution indicates a modification to a reliable bit among the first plurality of bits, the proposed error solution to eliminate a false correction of the first plurality of bits.

Abstract: A method for reading data from a solid-state drive (SSD) configured to store data in a plurality of memory cells arranged in memory blocks comprising rows, the method performed by a controller in communication with the plurality of memory cells. The method comprises retrieving data from a target row of memory cells of the plurality of memory cells associated with a read request received from a host using initial threshold voltages. The method also includes decoding the data using a hard decision stage. Additionally the method comprises estimating read threshold voltages of the target row of memory cells based on a transformation of a distribution of threshold voltages of cells in a memory block containing the target row when the hard decision decoding stage fails. The method further includes retrieving data from the target row using the estimated read threshold voltages.

Abstract: A system for decoding data stored in a non-volatile storage device may include processing circuits configured to decode, in a first iteration, each of a plurality of component codes corresponding to the data by performing a first number of enumerations over hypotheses. The processing circuits may be configured to determine, in the first iteration, an extrinsic value output for each of the component codes based on log-likelihood ratios (LLRs) of one or more error bits of a codeword. The processing circuits may be configured to determine a second number of enumerations based on the extrinsic value. The processing circuits may be configured to decode, in a second iteration, each of the plurality of component codes by performing the second number of enumerations over hypotheses.