Abstract: Systems and methods of selectively depositing metal oxide on an exposed metal surface relative to a dielectric material on a substrate by pre-treatment with a hydroxy species-generating plasma prior to inhibition of the metal surface with an inhibitor, and subsequent metal oxide deposition on the dielectric material are disclosed. Exemplary inhibitors include low vapor pressure inhibitors. Exemplary systems include heated ampoules and gas lines for delivering inhibitors or other processing chemicals.

Abstract: A vapor supply system to supply vapor to a process module of a substrate processing tool includes an evaporator assembly to vaporize liquid and to supply the vaporized liquid as vapor to the process module. The evaporator assembly is located external to the substrate processing tool. The vapor supply system includes a gas box to receive the vapor supplied by the evaporator assembly and supply the vapor from the gas box to the process module. The gas box encloses a plurality of valves and respective mass flow controllers to selectively supply the vapor from the evaporator assembly and at least one process gas from a gas source to the process module. The gas box is mounted on or within the substrate processing tool.

Abstract: Systems and methods of selectively depositing metal oxide on an exposed metal surface relative to a dielectric material on a substrate by pre-treatment with a hydroxy species-generating plasma prior to inhibition of the metal surface with an inhibitor, and subsequent metal oxide deposition on the dielectric material are disclosed. Exemplary inhibitors include low vapor pressure inhibitors. Exemplary systems include heated ampoules and gas lines for delivering inhibitors or other processing chemicals.