Patents by Inventor Avinesh K. Gupta

Avinesh K. Gupta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication of SiC substrates with low warp and bow
    Patent number: 8449671
    Abstract: A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.
    Type: Grant
    Filed: June 26, 2008
    Date of Patent: May 28, 2013
    Assignee: II-VI Incorporated
    Inventors: Ping Wu, Ilya Zwieback, Avinesh K. Gupta, Edward Semenas
  • FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW
    Publication number: 20100180814
    Abstract: A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.
    Type: Application
    Filed: June 26, 2008
    Publication date: July 22, 2010
    Applicant: II-VI INCORPORATED
    Inventors: Ping Wu, Ilya Zwieback, Avinesh K. Gupta, Edward Semenas