Abstract: Depth sensors comprising a focal plane array with photosites (PSs) directed in different directions, each PS operable to detect light arriving from an instantaneous field of view (IFOV) of the PS, a readout-set of readout circuitries (ROCs), each ROC coupled to readout-group PSs by multiple switches and operable to output an electric signal indicative of an amount of light impinging on the readout-group PSs when the read-out group is connected to the respective ROC via at least one of the switches, a controller operable to change switching states of the switches, such that at different times different ROCs of the readout-set are coupled to the readout-group and are exposed to reflections from different distances, and a processor operable to obtain the electric signals from the readout-set indicative of detected levels of reflected light collected from the IFOVs of the readout-group and to determine depth information for an object.

Abstract: Germanium (Ge)-Silicon (Si) structures, optoelectronic devices and method for forming same. A structure comprises a Si substrate, a Ge seed layer and a Ge epitaxial layer separated by respective interfaces that share a common plane normal, wherein the Si substrate and the Ge seed layer have a same first doping type with a first doping level, and a locally doped region formed in the Si layer adjacent to the Ge seed layer and having a second doping type with a second doping level, wherein the locally doped region is designed to reduce leakage currents between the Si substrate and the Ge epitaxial layer when an electrical bias is applied to the structure.

Abstract: A device and method for detecting the level of a compound in tissue, the device including: an illumination source operable to emit light from an optical opening into the tissue; a detector array having a plurality of photosites, each operable to detect light of the illumination source travelling through the tissue; wherein different photosites of the detector array are located at different distances from the optical opening; and a processor adapted for determining compound levels in the tissue based on differences in detected illumination levels at distinct wavelengths at different distances from the optical opening.

Abstract: Infrared (IR) photodetecting systems and methods. A system may comprise at least one photosite having a Ge photosensitive area (GPSA) that includes an absorber doped area having a first polarity and a Si layer comprising a first doped area (FDA), a storage well (SW), a floating diffusion (FD) and a transfer gate (TG); a controllable power source (CPS); and a controller, operable to control the CPS and the TG, to concurrently provide at a first time controlled voltages to the GPSA, FDA and FD, thereby forcing charge carriers of a given polarity (CCGP) from the GPSA toward the SW and to provide at another time other voltages to the GPSA, FDA and FD, thereby diminishing the forcing of the CCGP toward the SW and ceasing collection of signals by the SW, and to intermittently transfer the CCGP from the SW via the TG to the FD, where the CCSP are read via an electrode coupled to the FD.

Abstract: Methods to solve the problem of performing fusion of images acquired with two cameras with different type sensors, for example a visible (VIS) digital camera and an short wave infrared (SWIR) camera, include performing image space equalization on images acquired with the different type sensors before performing rectification and registration of such images in a fusion process.

Abstract: Electro-optical (EO) systems comprising a photodetector array (PDA) comprising a plurality of photosites (PSs), each PS operative to output detection signals for different frames, the detection signal output for a frame by the respective PS being indicative of an amount of light impinging on the respective PS during a respective frame exposure time (FET); a usability filtering module operative to first determine for each PS that the PS is unusable based on a first FET, and to later determine that the PS is usable based on a second FET that is shorter than the first FET; and a processor operative to generate images based on frame detection levels of the plurality of PSs.

Abstract: Systems and methods for detection of hazardous media on roads. A system may comprise a imaging receiver operating in the short wave infrared range (SWIR) and including a focal plane array (FPA) and a polarization filter array (PFA) comprising micro-polarizers, and an analysis module for analyzing SWIR image data obtained under passive or active illuminations conditions for detection of hazardous media on a road, wherein the hazardous media includes ice. In some embodiments, the FPA comprises germanium-on-silicon photodetectors (PDs). In some embodiments, the micro-polarizers are integrated with the PDs.

Abstract: Light detecting structures comprising a Si base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower pyramid top and a Ge photodiode formed on the Si pyramid top, wherein the Ge photodiode is operable to detect light in the short wavelength infrared range, and methods for forming such structures. A light detecting structure as above may be repeated spatially and fabricated in the form of a focal plane array of Ge photodetectors on silicon.

Abstract: Light detecting structures comprising a Si base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower pyramid top and a Ge photodiode formed on the Si pyramid top, wherein the Ge photodiode is operable to detect light in the short wavelength infrared range, and methods for forming such structures. A light detecting structure as above may be repeated spatially and fabricated in the form of a focal plane array of Ge photodetectors on silicon.

Abstract: Passively Q-switched lasers and short wave infrared (SWIR) electro-optical systems including such lasers. A passively Q-switched laser may include a gain medium (GM) having a stimulated emission cross section ?SE, a saturable absorber (SA) having an absorption cross section (?a) which is less than three times the ?SE of the GM, and an optical resonator within which the GM and the SA are positioned, the optical resonator comprising a high reflectivity mirror and an output coupler, wherein at least one of the high reflectivity mirror and the output coupler comprises a curved mirror, directing light within the optical resonator such that an effective cross-section of a laser mode within the SA (ASA) is smaller than a cross-section of a laser mode within a Rayleigh length of the pump (AGM).

Abstract: Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.

Abstract: Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.

Abstract: Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.

Abstract: Methods to solve the problem of performing fusion of images acquired with two cameras with different type sensors, for example a visible (VIS) digital camera and an short wave infrared (SWIR) camera, include performing image space equalization on images acquired with the different type sensors before performing rectification and registration of such images in a fusion process.

Abstract: Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.

Abstract: Focal plane arrays (FPAs) of plasmonic enhanced pyramidal silicon Schottky photodetectors (PDs) operative in the short wave infrared (SWIR) regime, and imaging systems combining such FPAs with active illumination sources and readout integrated circuit (ROIC). Such imaging systems enable imaging in the SWIR regime using inexpensive silicon detector arrays, specifically in vehicular environments in which such an imaging system may be mounted on a vehicle and image various moving and stationary targets.

Abstract: Photodetectors comprising a P type Ge region having a first region thickness and a first doping concentration and a N type GaAs region having a second region thickness and a second doping concentration smaller than the first doping concentration by at least one order of magnitude.

Abstract: Germanium (Ge)-Silicon (Si) structures, optoelectronic devices and method for forming same. A structure comprises a Si substrate, a Ge seed layer and a Ge epitaxial layer separated by respective interfaces that share a common plane normal, wherein the Si substrate and the Ge seed layer have a same first doping type with a first doping level, and a locally doped region formed in the Si layer adjacent to the Ge seed layer and having a second doping type with a second doping level, wherein the locally doped region is designed to reduce leakage currents between the Si substrate and the Ge epitaxial layer when an electrical bias is applied to the structure.

Abstract: Light detecting structures comprising germanium (Ge) photodiodes formed in a device layer of a germanium on-insulator (GeOI) wafer, focal planes arrays based on such Ge photodiodes (PDs) and methods for fabricating such Ge photodiodes and focal plane arrays (FPAs). An FPA includes a Ge-on-GeOI PD array bonded to a ROIC where the handle layer of the GeOI layer is removed. The GeOI insulator properties and thickness can be designed to improve light coupling into the PDs.

Abstract: Light detecting structures comprising a Si base having a pyramidal shape with a wide incoming light-facing pyramid bottom and a narrower pyramid top and a Ge photodiode formed on the Si pyramid top, wherein the Ge photodiode is operable to detect light in the short wavelength infrared range, and methods for forming such structures. A light detecting structure as above may be repeated spatially and fabricated in the form of a focal plane array of Ge photodetectors on silicon.