Abstract: A detector device is presented for use in a surface probing system. The detector device comprises an integral semiconductor structure configured to define a cantilever and tip probe assembly, comprising at least one tip formed on the cantilever, wherein an apex portion of said at least one tip is configured as an apertured photodetector comprising a layered structure formed with an aperture of subwavelength dimensions and defining at least one depletion region and an electrical circuit, said subwavelength aperture allowing collection of evanescent waves created at a surface region and interaction of collected evanescent waves with the at least one depletion region thereby causing direct conversion of the collected evanescent waves into electric signals being read by the electrical circuit within said tip apex portion, said integral semiconductor structure being thereby capable of concurrently monitoring topographic and optical properties of the surface being scanned by the tip.