Abstract: A method includes, in a memory device, receiving a command that specifies a peak power consumption that is not to be exceeded by the memory device. A memory of the memory device is configured in accordance with the peak power consumption specified in the command. A data storage operation in the configured memory is performed, while complying with the specified peak power consumption.

Abstract: A method for data storage includes, in a memory that includes multiple memory blocks, assessing a performance characteristic of the multiple memory blocks. At least some of the memory blocks are grouped into groups using a grouping criterion that groups together the memory blocks based on similarity in the assessed performance characteristic. Data is stored in the memory by applying parallel memory access operations in the groups of the memory blocks.

Abstract: An apparatus includes a memory and a memory controller. The memory includes a memory block that includes memory cells connected by word lines. The memory controller is configured to store data in the memory cells, and to identify a suspected short-circuit event in the memory block by recognizing a deviation of a performance characteristic of at least a given word line in the memory block relative to the performance characteristic of remaining word lines in the memory block.

Abstract: A device includes a memory and a read/write (R/W) unit. The memory includes multiple gates coupled to a common charge-trap layer. The R/W unit is configured to program and read the memory by creating and reading a set of electrically-charged regions in the common charge-trap layer, wherein at least a given region in the set is not uniquely associated with any single one of the gates.

Abstract: A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.

Abstract: A method for data storage in a memory that includes multiple analog memory cells, includes defining, based on a characteristic of the memory cells, an uneven wear leveling scheme that programs and erases at least first and second subsets of the memory cells with respective different first and second Programming and Erasure (P/E) rates. Data is stored in the memory in accordance with the uneven wear leveling scheme.

Abstract: A method includes providing data for storage in a memory, which includes multiple analog memory cells arranged in a three-dimensional (3-D) configuration having a first dimension associated with bit lines, a second dimension associated with word lines, and a third dimension associated with sections. The data is stored in the memory cells in accordance with a programming order that alternates among the sections, including storing a first portion of the data in a first section, then storing a second portion of the data in a second section different from the first section, and then storing a third portion of the data in the first section.

Abstract: A method for data storage includes, for a memory including groups of memory cells, defining a normal mode and a protected mode, wherein in the protected mode a respective analog value of each memory cell remains at all times unambiguously indicative of a respective data value stored in that memory cell. Data is initially stored in the memory using the normal mode. In response to an event, the protected mode is reverted to for at least one of the groups of the memory cells.

Abstract: A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.

Abstract: A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group.

Abstract: A method includes, in a memory controller that controls a memory, evaluating an available memory space remaining in the memory to write data. A redundant storage configuration is selected in the memory controller depending on the available memory space. Redundancy information is calculated over the data using the selected redundant storage configuration. The data and the redundancy information are written to the available memory space in the memory.

Abstract: A data storage method includes identifying, in a set of data items associated with respective logical addresses for storage in a memory, a first subset of the logical addresses associated with the data items containing application data, and a second subset of the logical addresses associated with the data items containing parity information that has been calculated over the application data. The data items associated with the first identified subset are stored in one or more first physical memory areas of the memory, and the data items associated with the second identified subset are stored in one or more second physical memory areas of the memory, different from the first physical memory areas. A memory management task is performed independently in the first physical memory areas and in the second physical memory areas.

Abstract: A method includes storing data values in a group of memory cells that share a common isolating layer, by producing quantities of electrical charge representative of the data values at respective regions of the common isolating layer that are associated with the memory cells. A function, which relates a drift of the electrical charge in a given memory cell in the group to the data values stored in one or more other memory cells in the group, is estimated. The drift is compensated for using the estimated function.

Abstract: A method includes, in a host that stores data in a storage device, instructing the storage device to operate in a power throttling mode that limits power consumption of the storage device to a selected power limit. Storage commands are generated in the host for execution by the storage device, wherein each of at least some of the storage commands is partitioned into multiple sub-commands having a maximal size that depends on the selected power limit. The sub-commands are sent for execution in the storage device.

Abstract: A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group.

Abstract: A method includes, for a memory die including at least first and second memory planes, each including multiple physical memory blocks, holding a definition of a redundancy mapping between first memory blocks in the first memory plane and respective second memory blocks in the second memory plane, such that a physical separation on the die between each first physical memory block and a corresponding second physical memory block meets a predefined criterion. Data is stored in one or more first physical memory blocks in the first memory plane. Redundancy information is stored relating to the data in one or more second physical memory blocks in the second memory plane that are mapped by the redundancy mapping to the one or more first physical memory blocks.

Abstract: A method includes, in a memory controller that controls a memory, evaluating an available memory space remaining in the memory to write data. A redundant storage configuration is selected in the memory controller depending on the available memory space. Redundancy information is calculated over the data using the selected redundant storage configuration. The data and the redundancy information are written to the available memory space in the memory.

Abstract: A device includes a memory and a read/write (R/W) unit. The memory includes multiple gates coupled to a common charge-trap layer. The R/W unit is configured to program and read the memory by creating and reading a set of electrically-charged regions in the common charge-trap layer, wherein at least a given region in the set is not uniquely associated with any single one of the gates.

Abstract: A device includes multiple memory devices, a bus splitter and a package. The bus splitter is configured to exchange storage commands and data with an external host using an external Input/Output (I/O) bus, and to distribute the storage commands and the data over multiple buses connected to respective subsets of the memory devices, so as to relay the storage commands and the data between the multiple memory devices and the external host. The memory devices and the bus splitter are contained in the package, in a multi-chip package (MCP) structure.

Abstract: An apparatus includes a non-volatile memory and a processor. The processor is configured to receive, from a host, commands for storage of data in the non-volatile memory, to further receive from the host, for storage in the non-volatile memory, File System (FS) information that specifies organization of the data in a FS of the host, to receive from the host a directive that grants the processor permission and capability to access and modify the FS information, and to access the FS information, using the directive, so as to manage the storage of the data in the non-volatile memory.