Abstract: A time-to-digital converter (TDC) circuit includes phase error calculation circuitry to: determine phase error values based on a time difference between a input reference clock and a feedback clock of a digital phase-locked loop (DPLL) circuit, the input reference clock and the feedback clock being unsynchronized; and provide the phase error values to a digital loop filter (DLF) of the DPLL circuit. The TDC circuit further includes clock generation circuitry to: generate a filter clock that asserts a clock pulse in response to detecting each last-received pulse of the input reference clock and the feedback clock; and provide the filter clock to the DLF concurrently with providing the phase error values to the DLF that are synchronized to the filter clock.

Abstract: A digitally-controlled oscillator (DCO) circuit includes a digital-to-analog converter (DAC) to generate a first current based on most significant bits of a multi-bit code received from a time-to-digital converter (TDC) of a digital phase-locked loop (PLL). The DCO circuit further includes a sigma-delta modulator (SDM) to modulate least significant bits of the multi-bit code into a set of digital bits based on a first frequency of a feedback clock of the DPLL. The set of digital bits is to cause the DAC to generate a second current. The DCO circuit further includes a ring oscillator coupled to the DAC, the ring oscillator to generate an alternating-current (AC) output signal having a second frequency corresponding to a combination of the first current and the second current.

Abstract: A digitally-controlled oscillator (DCO) circuit includes a digital-to-analog converter (DAC) to generate a first current based on most significant bits of a multi-bit code received from a time-to-digital converter (TDC) of a digital phase-locked loop (PLL). The DCO circuit further includes a sigma-delta modulator (SDM) to modulate least significant bits of the multi-bit code into a set of digital bits based on a first frequency of a feedback clock of the DPLL. The set of digital bits is to cause the DAC to generate a second current. The DCO circuit further includes a ring oscillator coupled to the DAC, the ring oscillator to generate an alternating-current (AC) output signal having a second frequency corresponding to a combination of the first current and the second current.

Abstract: A time-to-digital converter (TDC) circuit includes phase error calculation circuitry to: determine phase error values based on a time difference between a input reference clock and a feedback clock of a digital phase-locked loop (DPLL) circuit, the input reference clock and the feedback clock being unsynchronized; and provide the phase error values to a digital loop filter (DLF) of the DPLL circuit. The TDC circuit further includes clock generation circuitry to: generate a filter clock that asserts a clock pulse in response to detecting each last-received pulse of the input reference clock and the feedback clock; and provide the filter clock to the DLF concurrently with providing the phase error values to the DLF that are synchronized to the filter clock.

Abstract: A digital phase-locked loop (DPLL) includes a time-to-digital converter (TDC) to generate a multi-bit code based on a phase error between a reference clock and a feedback clock, a digital loop filter (DLF) coupled to the TDC, a digitally-controlled oscillator (DCO) circuit coupled to the DLF and to generate an output signal that is convertible to the feedback clock, and a logic component coupled to an input of the DCO circuit. The logic component is to: trigger, in response to detecting a power on of the DPLL circuit, a switch to decouple the DLF from the DCO circuit; determine, from the reference clock, a target frequency; measure a frequency of the feedback clock; and iteratively generate, based on the frequency during each iteration, a set of digital bits to the input of the DCO circuit that successively causes the frequency to converge towards the target frequency.

Abstract: A system and method for protecting against a voltage glitch are provided. Generally, the system includes a reset-detector coupled to a supply voltage (VCC) and to a power-on-reset (POR) block, and a glitch-detector coupled to VCC and the reset-detector. The reset-detector is operable to provide a signal to the POR block to generate a global-reset-signal when VCC decreases below a minimum and remains low for at least a first time. The glitch-detector is operable to provide a glitch-signal to the reset-detector to cause it to provide the signal to the POR block when VCC decreases below the minimum and remains low for at least a second time, where the second time is less than the first. The reset-detector can further include a retention-circuit operable to recall a glitch-signal was received and signal the POR block when VCC is restored. Other embodiments are also disclosed.

Abstract: A system and method for protecting against a voltage glitch are provided. Generally, the system includes a reset-detector coupled to a supply voltage (VCC) and to a power-on-reset (POR) block, and a glitch-detector coupled to VCC and the reset-detector. The reset-detector is operable to provide a signal to the POR block to generate a global-reset-signal when VCC decreases below a minimum and remains low for at least a first time. The glitch-detector is operable to provide a glitch-signal to the reset-detector to cause it to provide the signal to the POR block when VCC decreases below the minimum and remains low for at least a second time, where the second time is less than the first. The reset-detector can further include a retention-circuit operable to recall a glitch-signal was received and signal the POR block when VCC is restored. Other embodiments are also disclosed.

Abstract: Disclosed are methods for reading a set of bits from a NVM array (such as a SPI or parallel NOR NVM or otherwise) including: retrieving each of the set of bits from the NVM array substantially in parallel, applying substantially in parallel to each of the retrieved bits a segmented search, each search indexed using an order number of the respective bit being checked, and correcting a bit whose search indicates an error.

Abstract: Disclosed are methods for reading a set of bits from a NVM array (such as a SPI or parallel NOR NVM or otherwise) including: retrieving each of the set of bits from the NVM array substantially in parallel, applying substantially in parallel to each of the retrieved bits a segmented search, each search indexed using an order number of the respective bit being checked, and correcting a bit whose search indicates an error.

Abstract: The pipe effect can significantly degrade flash performance. A method to significantly reduce pipe current and (or neighbor current using a pre-charge sequence) is disclosed. A dedicated read order keeps the sensing node facing the section of the pipe which was pre-charged. The technique involves pre-charging several global bitlines (such as metal bitlines, or MBLs) and local bitlines (such as diffusion bitlines, or DBLs). The pre-charged global bitlines are selected according to a pre-defined table per each address. The selection of the global bitlines is done according to whether these global bitlines will interfere with the pipe during the next read cycle.

Abstract: The pipe effect can significantly degrade flash performance. A method to significantly reduce pipe current and (or neighbor current using a pre-charge sequence) is disclosed. A dedicated read order keeps the sensing node facing the section of the pipe which was pre-charged. The technique involves pre-charging several global bitlines (such as metal bitlines, or MBLs) and local bitlines (such as diffusion bitlines, or DBLs). The pre-charged global bitlines are selected according to a pre-defined table per each address. The selection of the global bitlines is done according to whether these global bitlines will interfere with the pipe during the next read cycle.

Abstract: The pipe effect can significantly degrade flash performance. A method to significantly reduce pipe current and (or neighbor current using a pre-charge sequence) is disclosed. A dedicated read order keeps the sensing node facing the section of the pipe which was pre-charged. The technique involves pre-charging several global bitlines (such as metal bitlines, or MBLs) and local bitlines (such as diffusion bitlines, or DBLs). The pre-charged global bitlines are selected according to a pre-defined table per each address. The selection of the global bitlines is done according to whether these global bitlines will interfere with the pipe during the next read cycle.

Abstract: A method of reducing read disturb in NVM cells by using a first drain voltage to read the array cells and using a second, lower drain voltage, to read the reference cells. Drain voltages on global bitlines (GBLs) for both the array and the reference cells may be substantially the same as one another to maintain main path capacitance matching, while drain voltages on local bitlines (LBLs) for the reference cells may be lower than the drain voltage on local bitlines (LBLs) for the array cells to reduce second bit effect. Reducing the drain voltage of the reference cell at its drain port may be performed using a clamping device or a voltage drop device.

Abstract: The pipe effect can significantly degrade flash performance. A method to significantly reduce pipe current and (or neighbor current using a pre-charge sequence) is disclosed. A dedicated read order keeps the sensing node facing the section of the pipe which was pre-charged. The technique involves pre-charging several global bitlines (such as metal bitlines, or MBLs) and local bitlines (such as diffusion bitlines, or DBLs). The pre-charged global bitlines may be selected according to a pre-defined table per each address. The selection of the global bitlines may be done according to whether these global bitlines will interfere with the pipe during the next read cycle.

Abstract: A method of reducing read disturb in NVM cells by using a first drain voltage to read the array cells and using a second, lower drain voltage, to read the reference cells. Drain voltages on global bitlines (GBLs) for both the array and the reference cells may be substantially the same as one another to maintain main path capacitance matching, while drain voltages on local bitlines (LBLs) for the reference cells may be lower than the drain voltage on local bitlines (LBLs) for the array cells to reduce second bit effect. Reducing the drain voltage of the reference cell at its drain port may be performed using a clamping device or a voltage drop device.

Abstract: According to some embodiments of the present invention, a non-volatile memory cell may be operated using a charge pump circuit. The charge pump circuit may be adapted to output a first and second voltage level, and the charge pump circuit may be connected to a first circuit segment, including a select transistor associated with the memory cell, through a switch. When the charge pump circuit is outputting power at the first voltage level, the switch may be conducting and the select transistor line may be charged. When the charge pump circuit is outputting power at the second voltage level, the switch may be opened and a second circuit segment, including a bit line associated with the memory cell, may be charged.

Abstract: According to some embodiments of the present invention, a non-volatile memory cell may be operated using a charge pump circuit. The charge pump circuit may be adapted to output a first and second voltage level, and the charge pump circuit may be connected to a first circuit segment, including a select transistor associated with the memory cell, through a switch. When the charge pump circuit is outputting power at the first voltage level, the switch may be conducting and the select transistor line may be charged. When the charge pump circuit is outputting power at the second voltage level, the switch may be opened and a second circuit segment, including a bit line associated with the memory cell, may be charged.