Abstract: Slices are cut from workpieces during a sequence of cut-off operations by a wire saw, having a wire array. The wire array is tensioned in a plane between two wire guide rollers supported between fixed and floating bearings. During each cut-off operation, a workpiece is fed through the wire array perpendicular to a workpiece axis and the wire array plane. The workpiece is fed with simultaneous axial movement of the floating bearings by adjusting a temperature of the fixed bearings in correlation with a first correction profile, which specifies a travel of the floating bearings in dependence on the depth of cut. In dependence on the depth of cut, operating parameters are set, such as the feed rate, an amount of working fluid fed to the wire array per unit time, a temperature of the working fluid, a wire speed, a wire consumption per cut-off operation, or a wire tension.

Abstract: The invention relates to a method for separating a plurality of slices from workpieces (4) by means of a wire saw, wherein a wire grating (2) is tensioned in a plane between two wire-guiding rollers (1), wherein each of the two wire-guiding rollers (1) is mounted between a fixed bearing (5) and a floating bearing (6). The method involves delivering the workpiece (4) via the wire grating (2) by controlling the temperature of the workpiece (4) by wetting the workpiece (4) with a cooling medium, while simultaneously axially shifting the floating bearing (6) by controlling the temperature of the fixed bearing (5) with a cooling fluid according to the specification of a first temperature profile, and while simultaneously shifting the workpiece (4) along the workpiece axis by means of a control element (15) according to the specification of a second correction profile.

Abstract: A method uses a wire saw to cut slices from a workpiece. The wire saw has an array of saw wire tensioned in a plane between two rollers supported between fixed and floating bearings. During a cut-off operation, the workpiece is fed through the wire array with simultaneous axial movement of the floating bearings by adjusting the temperature of the fixed bearings with a cooling fluid in accordance with the temperature of the cooling fluid being in dependence on a depth of cut and correlating with a first correction profile, which specifies the travel of the floating bearings in dependence on the depth of cut. Also, the workpiece is fed through the wire array while simultaneously moving the workpiece along the workpiece axis in accordance with a second correction profile, specifying the travel of the workpiece. The first and second correction profiles are opposed to a shape deviation.

Abstract: The invention relates to an epitaxially coated semiconductor wafer, processed by a method in which the semiconductor wafer is disposed on a susceptor in a coating apparatus and processed, wherein an etching gas is passed through the coating apparatus in an etching step. A first side of the semiconductor wafer which has been subjected to a polishing operation by CMP, or a second side of the semiconductor wafer opposite the first side, is coated with a protective layer before processing. The resulting wafer has exceptional geometry, as reflected by low ESFQR values.

Abstract: The invention relates to a method of processing a semiconductor in the semiconductor wafer is disposed on a susceptor in a coating apparatus and processed, wherein an etching gas is passed through the coating apparatus in an etching step. The invention further relates to a control system for controlling a coating apparatus for processing a semiconductor water, to a plant for processing a semiconductor wafer having a coating apparatus which comprises the control system, and a semiconductor wafer. A first side of the semiconductor wafer which has been subjected to a polishing operation by CMP, or a second side of the semiconductor wafer opposite the first side, is coated with a protective layer before processing.

Abstract: Semiconductor wafers with improved geometry are produced from a workpiece by processing the workpiece by means of a wire saw, by feeding the workpiece through an arrangement of wires which are tensioned between wire guide rollers and move in a running direction; producing kerfs when the wires engage into the workpiece; determining a placement error of the kerfs; and inducing a compensating movement of the workpiece as a function of the determined placement error along a longitudinal axis of the workpiece during the feeding of the workpiece through the arrangement of wires.

Abstract: Semiconductor wafers are produced from a workpiece by means of a wire saw, by feeding the workpiece through an arrangement of wires tensioned between wire guide rollers and divided into wire groups, the wires moving in a running direction producing kerfs as wires engage the workpiece. For each of the wire groups, a placement error of the kerfs of the wire groups determined, and for each of the wire groups compensating movements of the wires of the wire group are induced as a function of the placement error, in a direction perpendicular to the running direction of the wires during feeding of the workpiece through the arrangement of wires, by activating at least one drive element.

Abstract: The invention relates to a method of processing a semiconductor in the semiconductor wafer is disposed on a susceptor in a coating apparatus and processed, wherein an etching gas is passed through the coating apparatus in an etching step. The invention further relates to a control system for controlling a coating apparatus for processing a semiconductor water, to a plant for processing a semiconductor wafer having a coating apparatus which comprises the control system, and a semiconductor wafer. A first side of the semiconductor wafer which has been subjected to a polishing operation by CMP, or a second side of the semiconductor wafer opposite the first side, is coated with a protective layer before processing.

Abstract: Semiconductor wafers, are processed using minimally three processing operations: a first double-sided polishing operation, a second chemical-mechanical polishing operation and an epitaxial coating operation. A control system for conducting the method defines at least one operating parameter for the processing operations specifically based on at least one wafer parameter measured on the semiconductor wafer after processing in at least one processing operation, based on an actual state of a processing apparatus with which the respective processing operation is conducted, and based on optimizing wafer parameters for flatness after the wafer has undergone all three processing operations instead of optimizing each individual processing step for optimal flatness.

Abstract: Semiconductor wafers, are processed, using minimally three processing operations: a first double-sided polishing operation, a second chemical-mechanical polishing operation and an epitaxial coating operation. A control system for conducting the method defines at least one operating parameter for the processing operations specifically based on at least one wafer parameter measured on the semiconductor wafer after processing in at least one processing operation, based on an actual state of a processing apparatus with which the respective processing operation is conducted, and based on optimizing wafer parameters for flatness after the wafer has undergone all three processing operations instead of optimizing each individual processing step for optimal flatness.