Abstract: A device for detecting infrared radiation, includes at least one pixel having an axis in a direction Z, the pixel comprising a first absorbent planar structure comprising at least one semiconductor layer. The composition of the materials used to produce the at least one layer of the first absorbent planar structure is chosen such that: the first absorbent planar structure has an effective valence band formed by a plurality of energy levels. Each energy level is occupied by one of: a first type of positive charge carrier, called heavy holes, having a first effective mass; or a second type of positive charge carrier, called light holes, having a second effective mass strictly less than the first effective mass. The maximum energy level of the effective valence band is occupied by light holes along the axis of the pixel.

Abstract: A radiation detector includes a stack of layers along a direction Z, the stack comprising: an absorbent layer, a first contact layer, an assembly consisting of at least one intermediate layer, referred to as an intermediate assembly, an upper layer, the first contact layer and the upper layer having a plurality of detection zones and separation zones, a detection zone corresponding to a pixel of the detector, a passivation layer made from a dielectric material, arranged on the upper layer and having openings at the level of the detection zones of the upper layer, the semiconductor layers of the stack being compounds based on elements of groups IIIA and VA of the periodic table of the elements, the second material comprising the VA element antimony and the third material not comprising the VA element antimony.

Abstract: A device for detecting infrared radiation, includes at least one pixel having an axis in a direction Z, the pixel comprising a first absorbent planar structure comprising at least one semiconductor layer. The composition of the materials used to produce the at least one layer of the first absorbent planar structure is chosen such that: the first absorbent planar structure has an effective valence band formed by a plurality of energy levels. Each energy level is occupied by one of: a first type of positive charge carrier, called heavy holes, having a first effective mass; or a second type of positive charge carrier, called light holes, having a second effective mass strictly less than the first effective mass. The maximum energy level of the effective valence band is occupied by light holes along the axis of the pixel.

Abstract: A device for detecting infrared radiation, includes at least one pixel having an axis in a direction Z, the pixel comprising a first absorbent planar structure comprising at least one semiconductor layer. The composition of the materials used to produce the at least one layer of the first absorbent planar structure is chosen such that: the first absorbent planar structure has an effective valence band formed by a plurality of energy levels. Each energy level is occupied by one of: a first type of positive charge carrier, called heavy holes, having a first effective mass; or a second type of positive charge carrier, called light holes, having a second effective mass strictly less than the first effective mass. The maximum energy level of the effective valence band is occupied by light holes along the axis of the pixel.

Abstract: A device for detecting infrared radiation includes at least one pixel comprising: a first superlattice composed of the repetition of an elementary group comprising: a first layer having a first bandgap and a first conduction-band minimum; at least a second layer having a second bandgap and a second conduction-band minimum strictly lower than the first conduction-band minimum; a third layer having a third bandgap narrower than the first and second bandgaps and a third conduction-band minimum strictly lower than the second conduction-band minimum. The elementary group is produced in a first stacking configuration in the following order: the second layer, the third layer, the second layer, then the first layer; or in a second stacking configuration such that the third layer is confined between the first and second layers.

Abstract: A radiation detector includes a stack of layers along a direction Z, the stack comprising: an absorbent layer, a first contact layer, an assembly consisting of at least one intermediate layer, referred to as an intermediate assembly, an upper layer, the first contact layer and the upper layer having a plurality of detection zones and separation zones, a detection zone corresponding to a pixel of the detector, a passivation layer made from a dielectric material, arranged on the upper layer and having openings at the level of the detection zones of the upper layer, the semiconductor layers of the stack being compounds based on elements of groups IIIA and VA of the periodic table of the elements, the second material comprising the VA element antimony and the third material not comprising the VA element antimony.

Abstract: The invention relates to a radiation detector comprising a stack of superimposed layers successively comprising: an absorbent layer configured to absorb the radiation and made from a first semiconductor material, a screen charges layer made from a semiconductor material having a second bandgap value, a transition layer made from a semiconductor material having a third bandgap value, and a transition layer made from a semiconductor material having a third bandgap value, the absorbent layer and the screen charges layer having a doping of a first type, the first window layer having a doping of a second type, a dopant density of the window layer being greater than the dopant density of the transition layer.

Abstract: The invention relates to a method for manufacturing a photodetector able to operate for the photodetection of infrared electromagnetic waves, comprising a stack of thin layers placed on top of one another. The method includes obtaining a first assembly (E1) of stacked layers, forming a detection assembly, comprising a first substrate layer, a photoabsorbent layer, a barrier layer and at least one contact layer, and a second assembly (E2) of stacked layers forming a reading circuit, comprising at least one second substrate layer and a multiplexing layer. The first and second assemblies are glued between the contact layer of the first assembly and the multiplexing layer of the second assembly. Etching through the second assembly makes it possible to obtain a plurality of interconnect vias, then p or n doping of zones of the first contact layer of the first assembly through the interconnect vias.

Abstract: The invention relates to a radiation detector comprising a stack of superimposed layers successively comprising: an absorbent layer configured to absorb the radiation and made from a first semiconductor material, a screen charges layer made from a semiconductor material having a second bandgap value, a transition layer made from a semiconductor material having a third bandgap value, and a transition layer made from a semiconductor material having a third bandgap value, the absorbent layer and the screen charges layer having a doping of a first type, the first window layer having a doping of a second type, a dopant density of the window layer being greater than the dopant density of the transition layer.

Abstract: The invention relates to a method for manufacturing a photodetector able to operate for the photodetection of infrared electromagnetic waves, comprising a stack of thin layers placed on top of one another. The method includes obtaining a first assembly (E1) of stacked layers, forming a detection assembly, comprising a first substrate layer, a photoabsorbent layer, a barrier layer and at least one contact layer, and a second assembly (E2) of stacked layers forming a reading circuit, comprising at least one second substrate layer and a multiplexing layer. The first and second assemblies are glued between the contact layer of the first assembly and the multiplexing layer of the second assembly. Etching through the second assembly makes it possible to obtain a plurality of interconnect vias, then p or n doping of zones of the first contact layer of the first assembly through the interconnect, vias.