Abstract: Methods of making photovoltaic devices and photovoltaic devices including perovskite materials and having contact layers are described herein.

Abstract: The present disclosure relates to a device that includes a first metal oxide layer having a first thickness, a second metal oxide layer having a second thickness, and a base layer having a third thickness, where the first metal oxide layer is positioned between the base layer and the second metal oxide layer, at least one of the base layer and/or the first metal oxide layer includes a carbon-containing material, and at least one of a carbon concentration gradient and/or an oxygen concentration gradient is present across at least one of a portion of the first thickness and/or a portion of the third thickness. In some embodiments of the present disclosure, the first metal oxide layer may be permeable to an oxygen-containing compound. In some embodiments of the present disclosure, the oxygen-containing compound may include at least one of O3, N2O, and/or H2O2.

Abstract: Methods and compositions for forming perovskite hole transport layers for use in manufacturing photovoltaic devices are described. Embodiments include using a plurality of hole transport materials to produce high-performance HTL contacts to improve performance and stability.

Abstract: Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.

Abstract: The present disclosure relates to a method that includes preparing a mixture by dissolving at least two halide perovskite precursors in a first liquid, forming a halide perovskite crystal in the mixture by lowering a solubility limit of at least one of the halide perovskite precursors, and separating the halide perovskite crystal from the mixture, where at least one of the halide perovskite precursors contains an impurity, and the halide perovskite crystal is substantially free of the impurity.

Abstract: Methods and compositions for forming perovskite hole transport layers for use in manufacturing photovoltaic devices are described. Embodiments include using a plurality of hole transport materials to produce high-performance HTL contacts to improve performance and stability.

Abstract: Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.

Abstract: The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABX3 and a second layer that includes a perovskite-like material defined by at least one of A?2B?X?4, A?3B?2X?9, A?B?X?4, A?2B?X?6, and/or A?2AB?2X?7, where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A? is a third cation, B? is a fourth cation, X? is a second anion, and A? is different than A.

Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Abstract: The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABX3 and a second layer that includes a perovskite-like material defined by at least one of A?2B?X?4, A?3B?2X?9, A?B?X?4, A?2B?X?6, and/or A?2AB?2X?7, where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A? is a third cation, B? is a fourth cation, X? is a second anion, and A? is different than A.

Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.