Patents by Inventor Axel Sascha Baier

Axel Sascha Baier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device including silicon carbide body and method of manufacturing
    Patent number: 10886370
    Abstract: A silicon carbide body includes a drift structure having a first conductivity type, a body region, and a shielding region. The body and shielding regions, of a second conductivity type, are located between the drift structure and a first surface of the silicon carbide body. First and second trench gate stripes extend into the silicon carbide body. The body region is in contact with a first sidewall of the first trench gate stripe. The shielding region is in contact with a second sidewall of the second trench gate stripe. The second sidewall has a first length in a lateral first direction parallel to the first surface. A supplementary region of the first conductivity type contacts one or more interface areas of the second sidewall. The one or more interface areas have a combined second length along the first direction, the second length being at most 40% of the first length.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: January 5, 2021
    Assignee: Infineon Technologies AG
    Inventors: Florian Grasse, Axel Sascha Baier, Wolfgang Bergner, Barbara Englert, Christian Strenger
  • Semiconductor Device Including Silicon Carbide Body and Method of Manufacturing
    Publication number: 20200144370
    Abstract: A silicon carbide body includes a drift structure having a first conductivity type, a body region, and a shielding region. The body and shielding regions, of a second conductivity type, are located between the drift structure and a first surface of the silicon carbide body. First and second trench gate stripes extend into the silicon carbide body. The body region is in contact with a first sidewall of the first trench gate stripe. The shielding region is in contact with a second sidewall of the second trench gate stripe. The second sidewall has a first length in a lateral first direction parallel to the first surface. A supplementary region of the first conductivity type contacts one or more interface areas of the second sidewall. The one or more interface areas have a combined second length along the first direction, the second length being at most 40% of the first length.
    Type: Application
    Filed: October 31, 2019
    Publication date: May 7, 2020
    Inventors: Florian Grasse, Axel Sascha Baier, Wolfgang Bergner, Barbara Englert, Christian Strenger