Abstract: Methods for forming a thin film solar cell are provided. In one aspect, a thin film solar cell is formed by providing a back contact comprising a reflective material and an interface metal, applying a solder paste slurry that include a paste flux and metal particles to the interface metal and soldering at least one buss wire to back contact.

Abstract: A method of forming a semiconductor device module including a number of n semiconductor devices is provided, n being an integer ?2, the method including: providing a substrate coated with a first contact layer, having a semiconductor layer formed on the first contact layer, and having a second contact layer formed on the semiconductor layer; and forming a connection of the first contact layer and the second contact layer by forming a number of n-1 conductive paths in a material of the semiconductor layer for connecting the n semiconductor devices.

Abstract: A semiconductor device module is provided, including a number of n semiconductor devices formed on a substraten being an integer?2; each semiconductor device having a stack of a first contact layer region, a semiconductor layer region, and a second contact layer region wherein the first contact layer region of each (n?1)th semiconductor device is connected to the second contact layer region of the nth semiconductor device by an interconnection; and wherein, of the first and second contact layer regions, at least the first contact layer region of at least one of the semiconductor devices has a varying thickness, the thickness being maximum at the interconnection.

Abstract: The invention relates to a thin-film solar cell module (71) in which a layer (72) of TCO is applied on a glass substrate (73). On this layer (72) of TCO is disposed a semiconductor layer (75) on which is applied an electrically conducting backside layer (85). The backside layer (85) includes a bridge element (88) in contact with the layer (72) of TCO. Directly on the layer (72) of TCO are applied busbars (82) by means of a printing method. The busbars (82) are herein connected with the backside layer (85) via the layer (72) of TCO.

Abstract: A laser scribing device is provided which comprises at least a laser light source. The laser light source may generate a laser beam for scribing cell lines to form a patterned solar cell module. Furthermore, the laser may emit a light beam for generating a light spot on the surface of the solar cell module. The light beam may be modulated compared with the light beam used for the scribing process. By means of the light spot a particular region of the active area of the solar cell module may be illuminated, and the voltage VOC (L) may be measured at a voltage measurement device. The voltage measurement device is connected between the negative contact area and the positive contact area of the solar cell module. The measured voltage VOC (L) depends on the location of the laser spot on the solar cell module and the intensity of the laser spot.

Abstract: A solar cell module comprises a transparent substrate, e.g., a glass substrate. On top of the glass substrate a layer system is deposited. The layer system comprises a front electrode which may be a transparent conductive oxide (TCO) layer. Furthermore, the layer system comprises a thin film semiconductor layer deposited on the front electrode layer. A back electrode is formed on the thin film semiconductor layer which includes a very thin metal layer having a thickness d smaller than 50 nm. A Lambertian reflective layer is deposited on the thin metal layer in order to reflect light transmitted through the metal layer.

Abstract: A photovoltaic module is a glass-glass thin film solar cell. It comprises a transparent glass substrate arranged on the front side of the module, i.e., in the direction of the light source. A layer system is deposited on the substrate which comprises a front electrode layer, e.g., a TCO layer, an active semiconductor layer and a second electrode layer, which may also be a TCO (transparent conductive oxide) layer. The active semiconductor layer comprises semiconducting areas of different conductivity type and a junction between these areas. The junction may be a p-n or a p-i-n junction between a p-doped area and an n-doped area. The layer system is sandwiched between the glass substrate and a glass encapsulation element. The glass encapsulation element is bonded to the substrate and the layer system, respectively, by means of a bonding layer. According to the invention the bonding layer is configured as a white lambertian back reflector.

Abstract: The invention provides a method of forming a polycrystalline semiconductor film on a supporting substrate of foreign material. The method involves depositing a metal film onto the substrate, forming a film of metal oxide and/or hydroxide on a substrate of the metal, and forming a layer of an amorphous semiconductor material over a surface of the metal oxide and/or hydroxide film. The entire sample is then heated to a temperature at which the semiconductor layer is absorbed into the metal layer and deposited as a polycrystalline layer onto the target surface by metal-induced crystallization. The metal is left as an overlayer covering the deposited polycrystalline layer, with semiconductor inclusions in the metal layer. The polycrystalline semiconductor film and the overlayer are generated by porous interfacial metal oxide nd/or hydroxide film.

Abstract: In an intersubband light emitter, at least two injection/relaxation (I/R) regions contiguous with the same RT region have different doping levels. Preferably, one I/R region has a doping level that is at least 100 times lower than that of the other I/R region. In one embodiment, one I/R region is undoped, whereas the other I/R region is doped.

Abstract: In an intersubband light emitter, at least two injection/relaxation (I/R) regions contiguous with the same RT region have different doping levels. Preferably, one I/R region has a doping level that is at least 100 times lower than that of the other I/R region. In one embodiment, one I/R region is undoped, whereas the other I/R region is doped.