Abstract: A domestic refrigeration device and a method for operating a domestic refrigeration device. The domestic refrigeration device has a heat-insulated body with a coolable inner container which delimits a coolable interior provided for storing food. A coolant circuit is provided for cooling the coolable interior and includes a compressor and a field-oriented electric drive. The field-oriented electric drive has a field-oriented controller, a converter, and a permanently excited synchronous motor which is connected downstream of the converter and which is part of the compressor or is provided for driving the compressor.

Abstract: A domestic refrigeration device and a method for operating a domestic refrigeration device. The domestic refrigeration device has a heat-insulated body with a coolable inner container which delimits a coolable interior provided for storing food. A coolant circuit is provided for cooling the coolable interior and includes a compressor and a field-oriented electric drive. The field-oriented electric drive has a field-oriented controller, a converter, and a permanently excited synchronous motor which is connected downstream of the converter and which is part of the compressor or is provided for driving the compressor.

Abstract: A bump structure or pillar structure formed above a metallization system of a complex semiconductor device may include a stress buffer layer, which may efficiently distribute the resulting mechanical stress which may typically occur during the chip package interaction due to a thermal mismatch of these components. The stress buffer layer comprises copper-based buffer regions that cover a significant portion of the overall surface, wherein a thickness of approximately 3-10 ?m may also be used. Moreover, the buffer regions may efficiently replace aluminum as a terminal metal active region.

Abstract: A bump structure or pillar structure formed above a metallization system of a complex semiconductor device may include a stress buffer layer, which may efficiently distribute the resulting mechanical stress which may typically occur during the chip package interaction due to a thermal mismatch of these components. The stress buffer layer comprises copper-based buffer regions that cover a significant portion of the overall surface, wherein a thickness of approximately 3-10 ?m may also be used. Moreover, the buffer regions may efficiently replace aluminum as a terminal metal active region.

Abstract: A bump structure or pillar structure formed above a metallization system of a complex semiconductor device may include a stress buffer layer, which may efficiently distribute the resulting mechanical stress which may typically occur during the chip package interaction due to a thermal mismatch of these components. The stress buffer layer comprises copper-based buffer regions that cover a significant portion of the overall surface, wherein a thickness of approximately 3-10 ?m may also be used. Moreover, the buffer regions may efficiently replace aluminum as a terminal metal active region.

Abstract: A bump structure or pillar structure formed above a metallization system of a complex semiconductor device may include a stress buffer layer, which may efficiently distribute the resulting mechanical stress which may typically occur during the chip package interaction due to a thermal mismatch of these components. The stress buffer layer comprises copper-based buffer regions that cover a significant portion of the overall surface, wherein a thickness of approximately 3-10 ?m may also be used. Moreover, the buffer regions may efficiently replace aluminum as a terminal metal active region.

Abstract: By directly forming an underbump metallization layer on a contact region of the last metallization layer, the formation of any other terminal metals, such as aluminum and corresponding adhesion/barrier layers, may be avoided. Consequently, the thermal and electrical behavior of the resulting bump structure may be improved, while process complexity may be significantly reduced.

Abstract: The invention relates to a device for measuring quantities of heat while simultaneously measuring the evaporation kinetics and/or condensation kinetics of the most minute amounts of liquid in order to determine thermodynamic parameters. The aim of the invention is to determine low thermal outputs, which are absorbed or released by the sample, as well as small differences between thermal outputs with regard to a reference measurement of the same magnitude. To this end, a most minute amount of liquid is located inside a measuring chamber having a constant temperature and air humidity. At least one thermal sensor is provided for repeatedly measuring the thermal radiation emitted from the most minute amount of liquid. A measuring means serves to determine the time-dependent change in the most minute amount of liquid. A computer is assigned to the measuring chamber in order to register, display, evaluate and/or subsequently process the measured values.

Abstract: The invention relates to a device for measuring quantities of heat while simultaneously measuring the evaporation kinetics and/or condensation kinetics of the most minute amounts of liquid in order to determine thermodynamic parameters. The aim of the invention is to determine low thermal outputs, which are absorbed or released by the sample, as well as small differences between thermal outputs with regard to a reference measurement of the same magnitude. To this end, a most minute amount of liquid is located inside a measuring chamber having a constant temperature and air humidity. At least one thermal sensor is provided for repeatedly measuring the thermal radiation emitted from the most minute amount of liquid. A measuring means serves to determine the time-dependent change in the most minute amount of liquid. A computer is assigned to the measuring chamber in order to register, display, evaluate and/or subsequently process the measured values.

Abstract: A plasma etching process for etching a carbon-based low-k dielectric layer in a multi-layer inter-level dielectric. The low-k dielectric may be divinyl siloxane-benzocyclobutene (BCB), which contains about 4% silicon, the remainder being carbon, hydrogen, and a little oxygen. The BCB etch uses an etching gas of oxygen, a fluorocarbon, and nitrogen and no argon. An N2/O2 ratio of between 1:1 and 3:1 produces vertical walls in the BCB. In a dual-damascene structure, the inter-level dielectric includes two BCB layers, each underlaid by a respective stop layer. Photolithography with an organic photoresist needs a hard mask of silicon oxide or nitride over the upper BCB layer. After the BCB etch has cleared all the photoresist, the bias power applied to the cathode supporting the wafer needs to be set to a low value while the separately controlled plasma source power is set reasonably high, thereby reducing faceting of the exposed hard mask.

Abstract: A tear string envelope with the envelope made of an integral blank of sheet material and formed such that the front and rear portion of the envelope is interconnected by side flaps folded inwardly so that side edges and a lower and an upper folding edge are formed under leaving an upper insertion opening which can be closed by a gummed closing flap. The tear string extends at the inner side of an edge, with the tear string adhered at an edge different from that of the closing flap.